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公开(公告)号：US20110092059A1
公开(公告)日：2011-04-21
申请号：US12756036
申请日：2010-04-07
IPC分类号： H01L21/266 , B05C11/00 , B05B5/025
CPC分类号： C23C14/042 , C23C14/48 , H01J37/3171 , H01J2237/08 , H01J2237/303 , H01J2237/31711 , H01L21/266
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
摘要翻译： 本文中公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。 掩模可以并入基板处理系统中，例如离子注入系统。 掩模可以包括设置在第一排中的一个或多个第一孔; 以及设置在第二排中的一个或多个第二孔，每排沿着所述掩模的宽度方向延伸，其中所述一个或多个第一孔和所述一个或多个第二孔是不均匀的。
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公开(公告)号：US20120181443A1
公开(公告)日：2012-07-19
申请号：US13428682
申请日：2012-03-23
IPC分类号： G01T1/17
CPC分类号： H01J37/3171 , H01J2237/24507 , H01J2237/24528 , H01J2237/31711 , H01L21/26513 , H01L21/2658 , H01L21/266 , H01L31/0288 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
摘要翻译： 在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。 离子电流测量装置通过离子束平移。 使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。 以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。
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公开(公告)号：US20110031408A1
公开(公告)日：2011-02-10
申请号：US12845665
申请日：2010-07-28
IPC分类号： H01J3/14
CPC分类号： H01J37/3171 , H01J2237/24507 , H01J2237/24528 , H01J2237/31711 , H01L21/26513 , H01L21/2658 , H01L21/266 , H01L31/0288 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.
摘要翻译： 在离子注入机中，离子电流测量装置相对于目标基板的表面共面设置在掩模的后面，如同所述目标基板位于压板上一样。 离子电流测量装置通过离子束平移。 使用离子电流测量装置测量引导通过掩模的多个孔的离子束的电流。 以这种方式，掩模相对于离子束的位置以及掩模的条件可以基于由离子电流测量装置测量的离子电流分布来确定。
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公开(公告)号：US20130008494A1
公开(公告)日：2013-01-10
申请号：US13178118
申请日：2011-07-07
CPC分类号： H01L31/0687 , H01J2237/31711 , H01L21/26513 , H01L21/26586 , H01L21/266 , H01L31/022441 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： One method of implanting a workpiece involves implanting the workiece with an n-type dopant in a first region with center and a periphery. The workpiece also is implanted with a p-type dopant in a second region complementary to the first region. This second region also has a center and a periphery. The periphery of the first region and the periphery of the second region at least partially overlap. A dose at the periphery of the first region or second region is less than a dose at the center of the first region or second region. The region of overlap may function as a junction where charge carriers cannot pass.
摘要翻译： 植入工件的一种方法包括在具有中心和周边的第一区域中用n型掺杂剂注入工件。 工件也在与第一区域互补的第二区域中注入p型掺杂剂。 这个第二区域也有一个中心和周边。 第一区域的周边和第二区域的周边至少部分重叠。 在第一区域或第二区域的周围的剂量小于第一区域或第二区域的中心处的剂量。 重叠区域可以用作电荷载体不能通过的结。
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公开(公告)号：US20110039367A1
公开(公告)日：2011-02-17
申请号：US12853698
申请日：2010-08-10
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20228 , H01J2237/31711 , H01L21/266 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
摘要翻译： 制造太阳能电池的改进方法利用在离子注入机中相对于离子束固定的掩模。 离子束被引导通过掩模中的多个孔朝向衬底。 衬底以不同的速度移动，使得当衬底以第一扫描速率移动时衬底暴露于离子剂量率，而当衬底以第二扫描速率移动时，衬底暴露于离子剂量率。 通过修改扫描速率，可以在相应的衬底位置的衬底上植入各种剂量率。 这允许离子注入用于提供有利于制造太阳能电池的精确掺杂分布。
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公开(公告)号：US20130288400A1
公开(公告)日：2013-10-31
申请号：US13458441
申请日：2012-04-27
CPC分类号： H01J37/3171 , H01J37/3045 , H01J2237/31711 , H01L21/266
摘要： A system and method are disclosed for aligning substrates during successive process steps, such as ion implantation steps, is disclosed. Implanted regions are created on a substrate. After implantation, an image is obtained of the implanted regions, and a fiducial is provided on the substrate in known relation to at least one of the implanted regions. A thermal anneal process is performed on the substrate such that the implanted regions are no longer visible but the fiducial remains visible. The position of the fiducial may be used in downstream process steps to properly align pattern masks over the implanted regions. The fiducial also may be applied to the substrate before any ion implanting of the substrate is performed. The position of the fiducial with respect to an edge or a corner of the substrate may be used for aligning during downstream process steps. Other embodiments are described and claimed.
摘要翻译： 公开了用于在连续工艺步骤期间对准衬底的系统和方法，例如离子注入步骤。 在衬底上形成植入区域。 在植入之后，获得植入区域的图像，并且已知关系到至少一个植入区域的基底上提供了基准。 在基板上进行热退火处理，使得注入区域不再可见，但基准仍然可见。 基准的位置可以用于下游处理步骤，以便在注入区域上正确对准图案掩模。 在进行基板的任何离子注入之前，基准也可以应用于基板。 基准面相对于衬底的边缘或拐角的位置可用于在下游工艺步骤期间对准。 描述和要求保护其他实施例。
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公开(公告)号：US20110272602A1
公开(公告)日：2011-11-10
申请号：US13188837
申请日：2011-07-22
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20228 , H01J2237/31711 , H01L21/266 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
摘要翻译： 制造太阳能电池的改进方法利用在离子注入机中相对于离子束固定的掩模。 离子束被引导通过掩模中的多个孔朝向衬底。 衬底以不同的速度移动，使得当衬底以第一扫描速率移动时衬底暴露于离子剂量率，而当衬底以第二扫描速率移动时，衬底暴露于离子剂量率。 通过修改扫描速率，可以在相应的衬底位置的衬底上植入各种剂量率。 这允许离子注入用于提供有利于制造太阳能电池的精确掺杂分布。
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公开(公告)号：US20110256698A1
公开(公告)日：2011-10-20
申请号：US12906369
申请日：2010-10-18
IPC分类号： H01L21/266
CPC分类号： H01L21/266 , H01J37/3172 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.
摘要翻译： 公开了一种移动掩模以执行衬底的图案植入的改进方法。 掩模具有多个孔，并且被放置在离子源和基底之间。 在将衬底暴露于离子束之后，掩模被引导到相对于衬底的新位置，并且执行随后的注入步骤。 通过选择孔径尺寸和形状，指数距离和植入步骤的数量，可以产生各种种植体图案。 在一些实施例中，注入图案包括在条纹之间具有较轻掺杂区域的重掺杂水平条纹。 在一些实施例中，植入模式包括重掺杂区域格栅。 在其它实施例中，植入图案适用于汇流条结构。
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公开(公告)号：US20110104618A1
公开(公告)日：2011-05-05
申请号：US12916993
申请日：2010-11-01
申请人： Nicholas P.T. Bateman , Helen L. Maynard , Benjamin B. Riordon , Christopher R. Hatem , Deepak Ramappa
发明人： Nicholas P.T. Bateman , Helen L. Maynard , Benjamin B. Riordon , Christopher R. Hatem , Deepak Ramappa
CPC分类号： H01L31/0682 , H01L21/266 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Various methods of utilizing the physical and chemical property differences between amorphized and crystalline silicon are used to create masks that can be used for subsequent implants. In some embodiments, the difference in film growth between amorphous and crystalline silicon is used to create the mask. In other embodiments, the difference in reflectivity or light absorption between amorphous and crystalline silicon is used to create the mask. In other embodiments, differences in the characteristics of doped and undoped silicon is used to create masks.
摘要翻译： 使用利用非晶化和晶体硅之间的物理和化学性质差异的各种方法来产生可用于后续植入物的掩模。 在一些实施方案中，使用无定形和晶体硅之间的膜生长差异来产生掩模。 在其他实施例中，使用非晶硅和晶体硅之间的反射率或光吸收的差异来产生掩模。 在其他实施例中，掺杂和未掺杂硅的特性的差异被用于产生掩模。
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公开(公告)号：US20100197125A1
公开(公告)日：2010-08-05
申请号：US12695729
申请日：2010-01-28
IPC分类号： H01L21/266 , H01J37/317 , B05C11/00
CPC分类号： H01L21/266 , H01J37/09 , H01J37/3171 , H01J2237/0458 , H01J2237/31711 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.
摘要翻译： 公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，该技术可以被实现为用于处理衬底的方法。 该方法可以包括离子注入在离子源的下游设置的离子，其离子在离子源中产生; 以及将掩模的第一部分设置在所述基板的前面以将所述掩模的所述第一部分暴露于所述离子，所述掩模由所述第一和第二掩模保持器支撑，所述掩模还包括缠绕在所述第一掩模保持器中的第二部分 。
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