摘要:
The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an abrasive, or a combination thereof.
摘要:
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
摘要:
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.
摘要:
The invention provides a chemical-mechanical polishing composition comprising: (a) fumed silica particles, (b) about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5×10−3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.
摘要:
The invention provides a composition for slicing a substrate using a wire saw wherein the composition comprises a liquid carrier and an abrasive. The invention further provides methods of slicing a substrate using a wire saw and a composition.
摘要:
The invention is directed to a method of polishing a surface of an object that includes aluminum. The method includes the step of contacting the surface of the object with a soft polishing pad and a polishing composition. The polishing composition includes abrasive particles, an agent that oxidizes aluminum, and a liquid carrier to polish the surface of the object. The polishing composition includes the abrasive particles suspended in the liquid carrier, and is applied at a pH above about 7.
摘要:
The invention provides a chemical-mechanical polishing composition comprising: (a) an abrasive comprising α-alumina, (b) about 0.05 to about 50 mmol/kg of ions of at least one metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, and (c) a liquid carrier comprising water. The invention also provides a chemical-mechanical polishing composition comprising: (a) an abrasive selected from the group consisting of α-alumina, γ-alumina, δ-alumina, θ-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of at least one metal selected from the group consisting of calcium, strontium, barium, magnesium, zinc, and mixtures thereof, based on the total weight of the polishing composition, and (c) a liquid carrier comprising water. The invention further provides methods of polishing a substrate using each of the above-described chemical-mechanical polishing compositions.
摘要:
The invention provides a chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged electrolyte.
摘要:
The present invention provides glass polishing compositions and methods suitable for polishing a glass substrate at a down force of about 110 g/cm2 or less. One preferred polishing composition comprises a particulate cerium oxide abrasive (e.g., about 1 to about 15 percent by weight) suspended in an aqueous carrier containing a polymeric stabilizer, e.g., about 50 to about 1500 ppm of the stabilizer, and optionally, a water soluble inorganic salt. Preferably, the particulate cerium oxide abrasive has a mean particle size in the range of about 0.35 to about 0.9 μm. Another preferred composition comprises about 1 to about 15 percent by weight of a particulate cerium oxide abrasive characterized by a mean particle size of at least about 0.2 μm and a purity of at least about 99.9% CeO2, on a weight basis, suspended in an aqueous carrier at a pH at least about 1 unit higher or lower than the isoelectric point (IEP) of the cerium oxide abrasive.
摘要翻译:本发明提供了玻璃抛光组合物和适合于以约110g / cm 2或更低的压力抛光玻璃基材的方法。 一种优选的抛光组合物包含悬浮在含有聚合物稳定剂的水性载体中的颗粒状氧化铈磨料(例如约1至约15重量%),例如约50至约1500ppm的稳定剂,以及任选的水溶性 无机盐。 优选地,颗粒状氧化铈磨料的平均粒度在约0.35至约0.9μm的范围内。 另一种优选的组合物包含约1至约15重量%的颗粒状氧化铈磨料,其特征在于平均粒径为至少约0.2μm,纯度为至少约99.9%CeO 2,以重量为基础,悬浮于水性 载体在氧化铈研磨剂的等电点(IEP)的至少约1单位的pH以上。
摘要:
The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.