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公开(公告)号：US5476680A
公开(公告)日：1995-12-19
申请号：US422735
申请日：1995-04-14
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3227 , H01L43/10 , G11B2005/3996
摘要： A magnetoresistive read sensor incorporates a granular multilayer sensing element comprising a plurality of layers of generally flat particles of a ferromagnetic material embedded in a nonmagnetic electrically conductive material. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point. The ferromagnetic and the nonmagnetic materials are mutually immiscible, or may be miscible or partially miscible and processed in a manner to control interdiffusion. The magnetoresistive sensing element is formed by alternatively despositing layers of ferromagnetic material and layers of nonmagnetic conductive material on a substrate and then annealing the structure. During the annealing cycle, the layers of nonmagnetic material above and below the ferromagnetic layers penetrate at grain boundaries and break the continuity of the ferromagnetic layers to form layers or planes of ferromagnetic particles embedded in a matrix of nonmagnetic material.
摘要翻译： 磁阻读取传感器结合了颗粒状多层感测元件，其包括嵌入在非磁性导电材料中的铁磁材料的大量平坦的平坦颗粒层。 通过间隔层与磁阻感测元件分离的偏置层提供磁场以将磁阻感测元件偏置在期望的非信号点。 铁磁性材料和非磁性材料是相互混溶的，或者可以混溶或部分混溶，并以一种控制相互扩散的方式加工。 磁阻感测元件由铁磁材料层和非磁性导电材料层交替地形成在衬底上，然后退火该结构。 在退火循环期间，铁磁性层之上和之下的非磁性材料层穿透晶界并破坏铁磁层的连续性，以形成嵌入非磁性材料基体中的铁磁颗粒的层或平面。
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公开(公告)号：US5452163A
公开(公告)日：1995-09-19
申请号：US173590
申请日：1993-12-23
申请人： Kevin R. Coffey , Robert E. Fontana , James K. Howard , Todd L. Hylton , Michael A. Parker , Ching H. Tsang
发明人： Kevin R. Coffey , Robert E. Fontana , James K. Howard , Todd L. Hylton , Michael A. Parker , Ching H. Tsang
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01L43/10 , G11B2005/3996
摘要： A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
摘要翻译： 磁阻读取传感器包括由平面阵列中的一个或多个磁阻元件形成的多层感测元件，每个磁阻元件具有由非磁性层隔开的至少两个铁磁层的多层结构。 铁磁层通过在铁磁层的相对边缘处的静磁耦合而反铁磁耦合。 通过间隔层与磁阻感测元件分离的偏置层提供磁场以将磁阻感测元件偏置在期望的非信号点以进行线性响应。 磁阻感测元件通过在衬底上交替地沉积铁磁材料层和非磁性材料层而形成，然后使用光刻技术对所得结构进行构图以提供磁阻元件的平面阵列。 导电层沉积在填充在分离磁阻元件的空间中的阵列上，以提供结构平面中的元件之间的导电性。
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公开(公告)号：US5492775A
公开(公告)日：1996-02-20
申请号：US69060
申请日：1993-05-28
CPC分类号： C23C14/085 , C23C14/08 , C23C14/58 , C23C14/5806 , C23C14/584 , G11B5/653
摘要： A high-density recording media comprising longitudinally oriented polycrystalline barium ferrite exhibits large coercivity, corrosion resistance, high hardness and durability. Films are prepared by on-axis sputtering at ambient temperatures from stoichiometric targets followed by a post-deposition anneal at approximately 850.degree.C. to induce crystallization. Crystallization yields a magnetic film with large in-plane remanence and a fine scale texturing that greatly improves the tribological performance of barium ferrite disks. Exceptional durability can be achieved on disks without overcoats. Grain sizes as small as 200 .ANG. are produced by doping with small amounts of Cr.sub.2 O.sub.3 or other additives. Coercivities greater than 4000 Oe are achieved even in small grain films.
摘要翻译： 包含纵向取向的多晶钡铁氧体的高密度记录介质具有较高的矫顽力，耐腐蚀性，高硬度和耐久性。 通过在环境温度下从化学计量的靶进行在轴溅射制备膜，然后在约850℃下进行后沉积退火以诱导结晶。 结晶产生具有大的面内剩余磁性膜和精细尺度纹理，大大提高钡铁氧体磁盘的摩擦学性能。 可以在没有大衣的磁盘上实现卓越的耐久性。 通过掺杂少量的Cr 2 O 3或其它添加剂来生产小于200安培的晶粒尺寸。 即使在小颗粒薄膜中也能获得大于4000 Oe的矫顽力。
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公开(公告)号：US06682634B1
公开(公告)日：2004-01-27
申请号：US09471662
申请日：1999-12-23
IPC分类号： C23C1400
CPC分类号： C23C14/46 , H01J37/3178 , H01J37/34 , H01J2237/3146
摘要： In accordance with one specific embodiment of the present invention, the apparatus for sputter deposition within an evacuated volume comprises a compact ion source to generate ions into which an ionizable gas is introduced and from which ions leave with directed energies near or below the sputtering threshold, a sputter target near that source and located within the beam of ions leaving that source, a sputter target with a grounded shield that defines the target portion exposed to sputtering, and a power supply to bias the target negative relative to ground so that ions are attracted to and sputter the target. Particles sputtered from the target are deposited on a deposition substrate separate from both the ion source and the sputter target. For an insulating target, the target is biased with a radiofrequency power supply and the bias has a mean negative value rather than a direct-current negative value relative to ground. The rate and energy with which the ions arrive at the target determine the rate with which that target is sputtered and the deposition rate on the substrate. In using a compact gridless ion source, the high pressure required for generating ions is confined to the ion source, reducing the pumping gas load. For ion energies at or near the sputtering threshold, the sputtering from extraneous hardware is reduced or eliminated. In addition, the target biases can be low enough to minimize the damage due to energetic neutrals that result from reflection of energetic target ions.
摘要翻译： 根据本发明的一个具体实施例，用于在抽真空体积内溅射沉积的装置包括致密的离子源，以产生离子，其中引入可离子化气体，并且离子离开具有接近或低于溅射阈值的定向能量， 靠近该源并且位于离开该源的离子束内的溅射靶，具有限定暴露于溅射的靶部分的接地屏蔽的溅射靶，以及使靶相对于地离子偏移以使得离子被吸引的电源 对目标进行溅射。 从目标溅射的颗粒沉积在与离子源和溅射靶分离的沉积基底上。 对于绝缘目标，目标通过射频电源偏置，偏置具有相对于地面的平均负值而不是直流负值。 离子到达目标的速率和能量决定了靶溅射的速率和衬底上的沉积速率。 在使用紧凑的无栅离子源时，产生离子所需的高压被限制在离子源中，从而减少泵送气体的负荷。 对于溅射阈值处或附近的离子能量，来自外部硬件的溅射被减少或消除。 此外，目标偏差可以低到足以最小化由于能量目标离子的反射而导致的能量中性粒子的损伤。
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公开(公告)号：US06843891B2
公开(公告)日：2005-01-18
申请号：US09766069
申请日：2001-01-19
IPC分类号： C23C14/46 , H01J37/317 , H01J37/34 , C23C14/00 , C23C14/32
CPC分类号： C23C14/46 , H01J37/3178 , H01J37/34 , H01J2237/3146
摘要： In one embodiment of this invention, the apparatus for sputter deposition within an evacuated volume comprises a compact gridless ion source into which an ionizable gas is introduced and from which ions leave with directed energies at or near the sputtering threshold and a sputter target near that source, biased negative relative to the surrounding vacuum enclosure, and located within the beam of ions leaving that source. Particles sputtered from the target are deposited on a deposition substrate spaced from both the ion source and the sputter target. An energetic beam of electrons can be generated by the incident ions striking the negatively biased sputter target and the deposition substrate is located either within or outside of this beam, depending on whether the net effect of bombardment by energetic electrons is beneficial or detrimental to that particular deposition process.
摘要翻译： 在本发明的一个实施例中，用于在抽真空体积内溅射沉积的装置包括一个紧凑的无栅离子源，可离子化气体被引入到其中并且离子离开具有在溅射阈值处或附近的定向能量，以及在该源附近的溅射靶 ，相对于周围的真空外壳偏置为负值，并且位于离开该源的离子束内。 从目标物溅射的颗粒沉积在与离子源和溅射靶相隔离的沉积基底上。 电子的能量束可以通过入射离子撞击负偏压的溅射靶产生，并且沉积衬底位于该光束的内部或外部，这取决于能量电子的轰击的净效应是有益的还是有害的 沉积工艺。
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公开(公告)号：US5629682A
公开(公告)日：1997-05-13
申请号：US359492
申请日：1994-12-20
CPC分类号： G01D5/145 , G01P3/487 , G11B5/3967
摘要： A magnetic encoder apparatus for determining the position of a moving object. The encoder has a merged magnetoresistive (MR) head capable of maintaining a magnetic transducing relationship with a magnetic medium on a substrate while there is relative motion between the head and the medium. The merged MR head contains an MR read element and an inductive transducer write element. The inductive transducer write element is capable of writing encoded bits that contain information that defines a position of the substrate. The MR read element is capable of reading these encoded bits and generating an output signal. The output signal is processed by electronic circuitry in order to decipher the position of the moving object that is coupled with the encoder.
摘要翻译： 一种用于确定移动物体的位置的磁性编码器装置。 编码器具有合并的磁阻（MR）头，其能够在头和介质之间存在相对运动的同时在基板上保持与磁介质的磁转换关系。 合并MR磁头包含MR读取元件和感应换能器写入元件。 感应换能器写入元件能够写入包含定义衬底的位置的信息的编码位。 MR读取元件能够读取这些编码比特并产生输出信号。 输出信号由电子电路处理，以便解密与编码器耦合的移动物体的位置。
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