Barium ferrite thin film for longitudinal recording
    1.
    发明授权
    Barium ferrite thin film for longitudinal recording 失效
    钡铁氧体薄膜用于纵向记录

    公开(公告)号:US5492775A

    公开(公告)日:1996-02-20

    申请号:US69060

    申请日:1993-05-28

    摘要: A high-density recording media comprising longitudinally oriented polycrystalline barium ferrite exhibits large coercivity, corrosion resistance, high hardness and durability. Films are prepared by on-axis sputtering at ambient temperatures from stoichiometric targets followed by a post-deposition anneal at approximately 850.degree.C. to induce crystallization. Crystallization yields a magnetic film with large in-plane remanence and a fine scale texturing that greatly improves the tribological performance of barium ferrite disks. Exceptional durability can be achieved on disks without overcoats. Grain sizes as small as 200 .ANG. are produced by doping with small amounts of Cr.sub.2 O.sub.3 or other additives. Coercivities greater than 4000 Oe are achieved even in small grain films.

    摘要翻译: 包含纵向取向的多晶钡铁氧体的高密度记录介质具有较高的矫顽力,耐腐蚀性,高硬度和耐久性。 通过在环境温度下从化学计量的靶进行在轴溅射制备膜,然后在约850℃下进行后沉积退火以诱导结晶。 结晶产生具有大的面内剩余磁性膜和精细尺度纹理,大大提高钡铁氧体磁盘的摩擦学性能。 可以在没有大衣的磁盘上实现卓越的耐久性。 通过掺杂少量的Cr 2 O 3或其它添加剂来生产小于200安培的晶粒尺寸。 即使在小颗粒薄膜中也能获得大于4000 Oe的矫顽力。

    Multilayer magnetoresistive sensor
    3.
    发明授权
    Multilayer magnetoresistive sensor 失效
    多层磁阻传感器

    公开(公告)号:US5452163A

    公开(公告)日:1995-09-19

    申请号:US173590

    申请日:1993-12-23

    IPC分类号: G01R33/09 G11B5/39 H01L43/10

    摘要: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.

    摘要翻译: 磁阻读取传感器包括由平面阵列中的一个或多个磁阻元件形成的多层感测元件,每个磁阻元件具有由非磁性层隔开的至少两个铁磁层的多层结构。 铁磁层通过在铁磁层的相对边缘处的静磁耦合而反铁磁耦合。 通过间隔层与磁阻感测元件分离的偏置层提供磁场以将磁阻感测元件偏置在期望的非信号点以进行线性响应。 磁阻感测元件通过在衬底上交替地沉积铁磁材料层和非磁性材料层而形成,然后使用光刻技术对所得结构进行构图以提供磁阻元件的平面阵列。 导电层沉积在填充在分离磁阻元件的空间中的阵列上,以提供结构平面中的元件之间的导电性。

    Method for manufacturing granular multilayer mangetoresistive sensor
    4.
    发明授权
    Method for manufacturing granular multilayer mangetoresistive sensor 失效
    颗粒状多层电阻传感器的制造方法

    公开(公告)号:US5476680A

    公开(公告)日:1995-12-19

    申请号:US422735

    申请日:1995-04-14

    摘要: A magnetoresistive read sensor incorporates a granular multilayer sensing element comprising a plurality of layers of generally flat particles of a ferromagnetic material embedded in a nonmagnetic electrically conductive material. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point. The ferromagnetic and the nonmagnetic materials are mutually immiscible, or may be miscible or partially miscible and processed in a manner to control interdiffusion. The magnetoresistive sensing element is formed by alternatively despositing layers of ferromagnetic material and layers of nonmagnetic conductive material on a substrate and then annealing the structure. During the annealing cycle, the layers of nonmagnetic material above and below the ferromagnetic layers penetrate at grain boundaries and break the continuity of the ferromagnetic layers to form layers or planes of ferromagnetic particles embedded in a matrix of nonmagnetic material.

    摘要翻译: 磁阻读取传感器结合了颗粒状多层感测元件,其包括嵌入在非磁性导电材料中的铁磁材料的大量平坦的平坦颗粒层。 通过间隔层与磁阻感测元件分离的偏置层提供磁场以将磁阻感测元件偏置在期望的非信号点。 铁磁性材料和非磁性材料是相互混溶的,或者可以混溶或部分混溶,并以一种控制相互扩散的方式加工。 磁阻感测元件由铁磁材料层和非磁性导电材料层交替地形成在衬底上,然后退火该结构。 在退火循环期间,铁磁性层之上和之下的非磁性材料层穿透晶界并破坏铁磁层的连续性,以形成嵌入非磁性材料基体中的铁磁颗粒的层或平面。

    Getter layer lead structure for eliminating resistance increase
phenomena and embrittlement and method for making the same
    5.
    发明授权
    Getter layer lead structure for eliminating resistance increase phenomena and embrittlement and method for making the same 失效
    吸收层铅结构,用于消除电阻增加现象和脆化及其制造方法

    公开(公告)号:US5828532A

    公开(公告)日:1998-10-27

    申请号:US941774

    申请日:1997-09-30

    IPC分类号: G11B5/00 G11B5/39 G11B5/40

    CPC分类号: G11B5/3903 G11B5/00 G11B5/40

    摘要: A thin film lead structure resistant to resistance increase phenomenon resulting from contamination by mobile impurities. A thin film lead is disposed proximate to a getter layer material having a higher affinity for mobile impurities that the thin film lead. The getter layer material captures mobile impurities and prevents their migration into the thin film lead. The getter layer material may be formed over and in contact with the thin film lead, may be encapsulated within the thin film lead, or both. The getter layer material comprises a rare earth metal selected from the group consisting of yttrium, scandium, lanthanum, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, erbium, and ytterbium. The thin film lead is preferably tantalum, but may be selected from the group consisting of niobium, vanadium, chromium, molybdenum, tungsten and iron. An alternate embodiment of the invention includes a transition metal comprising titanium, zirconium, or hafnium as the getter layer. The capture of mobile impurities by the getter layer prevents resistance increase phenomenon and embrittlement to the thin film lead. The thin film lead may be used as a thin film lead to an electrical circuit, the sensor structure in a magnetic head.

    摘要翻译: 一种薄膜引线结构,抵抗由移动杂质污染导致的电阻增加现象。 薄膜引线靠近吸附剂层材料设置,该吸气剂层材料对薄膜引线的移动杂质具有更高的亲和力。 吸气层材料捕获移动杂质并防止其迁移到薄膜引线中。 吸气剂层材料可以形成在薄膜引线之上并与薄膜引线接触,可以封装在薄膜引线内,或两者都被封装。 吸气剂层材料包括选自钇,钪,镧,铈,镨,钕,钐,钆,铽,镝,钬,铒和镱的稀土金属。 薄膜引线优选为钽,但可以选自铌,钒,铬,钼,钨和铁。 本发明的替代实施方案包括包含钛,锆或铪作为吸气剂层的过渡金属。 通过吸气层捕获移动杂质防止了电阻增加现象和薄膜引线的脆化。 薄膜引线可用作薄膜引线到电路,传感器结构在磁头中。

    Magnetic recording disk, magnetoresistive read head, inductive write
head combination
    6.
    发明授权
    Magnetic recording disk, magnetoresistive read head, inductive write head combination 失效
    磁记录盘,磁阻读头,感应写头组合

    公开(公告)号:US5227212A

    公开(公告)日:1993-07-13

    申请号:US739565

    申请日:1991-08-02

    IPC分类号: G11B5/64 G11B5/66

    摘要: An improved CoPt based or CoNi based alloy magnetic recording disk for horizontal recording has a magnetic recording layer which is a laminated structure of relatively thin magnetic alloy films separated by relatively thin non-magnetic spacer films. The resulting laminated disk structure has substantially decreased intrinsic media noise at high linear recording densities. A magnetic recording disk drive uses the low noise laminated disk and and a magnetoresistive read sensor to provide a disk drive with significantly reduced noise in the data readback signal.

    摘要翻译: 用于水平记录的改进的基于CoPt或CoNi的合金磁记录盘具有磁记录层,其是由相对薄的非磁性间隔膜分离的相对薄的磁性合金膜的叠层结构。 所得的层压盘结构在高线性记录密度下具有显着降低的本征介质噪声。 磁记录盘驱动器使用低噪声层叠盘和磁阻读取传感器来提供在数据回读信号中具有显着降低的噪声的磁盘驱动器。

    Process for fabricating thin film metal alloy magnetic recording disks
to selectively variable coercivities
    9.
    发明授权
    Process for fabricating thin film metal alloy magnetic recording disks to selectively variable coercivities 失效
    用于制造薄膜金属合金磁记录盘以选择性地可变矫顽力的方法

    公开(公告)号:US5149409A

    公开(公告)日:1992-09-22

    申请号:US640182

    申请日:1991-01-11

    摘要: In the fabrication of thi film cobalt alloy magnetic recording disks by sputter-deposition, the coercivity of the disks can be selectively varied by introducing a predetermined amount of hydrocarbon gas, such as methane, into the argon-based sputtering atmosphere. The flow rate of the hydrocarbon gas into the sputtering chamber is directly related to the coercivity of the resulting disks. This permits the coercivity of the disks to be controlled without the necessity of changing the composition of the cobalt alloy sputtering targets, and without the necessity of changing the thickness of an underlying between the disk substrate and the magnetic layer. The use of hydrocarbon gas in the reactive sputtering of the cobalt alloy magnetic layer in the disks does not affect the intrinsic media noise of the disks, thus allowing for the manufacturing of disks with high signal-to-noise ratio (SNR) of the readback signal.

    摘要翻译: 在通过溅射沉积制造薄膜钴合金磁记录盘的过程中,可以通过将预定量的烃气(例如甲烷)引入到氩基溅射气氛中来选择性地改变盘的矫顽力。 进入溅射室的烃气体的流速与所得到的盘的矫顽力直接相关。 这允许在不需要改变钴合金溅射靶的组成的情况下控制盘的矫顽力,并且不需要改变盘基片和磁性层之间的厚度。 在磁盘中的钴合金磁性层的反应性溅射中使用碳氢化合物气体不会影响磁盘的内在介质噪声,从而允许制造回读的高信噪比(SNR) 信号。