公开(公告)号：US06207966B1

公开(公告)日：2001-03-27

申请号：US09205010

申请日：1998-12-04

申请人： Khanh B. Nguyen ,  Harry Levinson ,  Richard D. Edwards ,  Stuart Brown ,  Paul W. Ackmann

发明人： Khanh B. Nguyen ,  Harry Levinson ,  Richard D. Edwards ,  Stuart Brown ,  Paul W. Ackmann

IPC分类号： G01B1100

CPC分类号： G03F9/7076 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： An alignment mark protection structure (95) is disclosed which is used to ensure an integrity of an alignment scheme for a substrate (50) which is to be subjected to lithographic processing. The alignment mark protection structure (95) comprises the substrate (50) and an alignment mark (52) associated with the substrate (50). The alignment mark (52) reflects an alignment light (208) which is then used to determine an optimum alignment between the substrate (50) and a lithographic mask (214). A cap (100) overlies the alignment mark (52) and is substantially transparent with respect to the alignment light (208). The cap (100) protects the underlying alignment mark (52) from lithographic process-induced damage during processing and thus reduces alignment light noise, thereby improving the alignment between a mask (214) and the substrate (50) and minimizing the registration error associated with overlying layers formed on the substrate (50).

摘要翻译： 公开了一种对准标记保护结构（95），其用于确保待经受光刻处理的基板（50）的对准方案的完整性。 对准标记保护结构（95）包括衬底（50）和与衬底（50）相关联的对准标记（52）。 对准标记（52）反射对准光（208），然后将对准光（208）用于确定基板（50）和光刻掩模（214）之间的最佳对准。 盖（100）覆盖对准标记（52），并且相对于对准光（208）基本上是透明的。 盖（100）在处理期间保护下面的对准标记（52）免受光刻处理引起的损坏，从而减少对准光噪声，从而改善掩模（214）和基板（50）之间的对准并使与之相关联的注册误差最小化 其中覆盖层形成在基底（50）上。

公开(公告)号：US06208747B1

公开(公告)日：2001-03-27

申请号：US09203240

申请日：1998-12-01

申请人： Khanh B. Nguyen ,  Harry Levinson

发明人： Khanh B. Nguyen ,  Harry Levinson

IPC分类号： G06K900

CPC分类号： G03F7/70616 ,  G03F7/70358 ,  G03F7/70625

摘要： A method (300) of characterizing a lithographic scanning system includes the steps of printing a first pattern (302) using a reticle (220) having a first orientation with respect to the lithographic scanning system and measuring a critical dimension of the first pattern at a plurality of points (310). The method (300) further includes printing a second pattern (320) using the reticle (220) having a second orientation with respect to the lithographic scanning system different than the first orientation and measuring a critical dimension of the second pattern at the plurality of points (322). The measured critical dimension data is then used to determine a reticle critical dimension component and a non-reticle critical dimension component of the patterns at the plurality of points (324) and a scanning system critical dimension component of the patterns is then determined using the non-reticle critical dimension component data along a plurality of points corresponding to a scanning direction of the lithographic scanning system (326).

摘要翻译： 表征平版印刷扫描系统的方法（300）包括以下步骤：使用相对于光刻扫描系统具有第一取向的掩模版（220）打印第一图案（302），并测量第一图案的临界尺寸 多个点（310）。 方法（300）还包括使用相对于不同于第一取向的光刻扫描系统具有第二取向的掩模版（220）打印第二图案（320），并且在多个点处测量第二图案的临界尺寸 （322）。 然后使用测量的临界尺寸数据来确定多个点（324）上的图案的标线片临界尺寸分量和非标线片临界尺寸分量，并且然后使用非 - 沿着与光刻扫描系统（326）的扫描方向相对应的多个点的重复临界尺寸分量数据。

公开(公告)号：US6159643A

公开(公告)日：2000-12-12

申请号：US258959

申请日：1999-03-01

申请人： Harry Levinson ,  Khanh B. Nguyen

发明人： Harry Levinson ,  Khanh B. Nguyen

IPC分类号： G03F1/00 ,  G03F1/24 ,  G03F1/60 ,  G03F9/00

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/24 ,  G03F1/60

摘要： A reflective lithography mask (12) includes a pattern-producing portion (200) and a substrate (300) supporting the pattern-producing portion on its top surface. The pattern-producing portion has reflective regions and non-reflective regions corresponding to a desired circuit pattern. The substrate (300) comprises a top layer (306) having a top surface with an optical flatness in the range of at least a quarter-wavelength and a bottom layer (304) having a coefficient of thermal expansion less than about 1.0 ppm/.degree. C. The reflective mask (12) is used in a lithography method to delineate a latent image of a desired circuit pattern (preferably having design rules of 0.18 .mu.m and less) onto a wafer (14) by illuminating the mask (12) with radiation (preferably having a wavelength of 3 nm to 50 nm) so as to reflect radiation from the reflective regions of the mask onto the wafer (14).

摘要翻译： 反射光刻掩模（12）包括在其顶表面上支撑图案产生部分的图案产生部分（200）和基底（300）。 图案产生部分具有对应于期望的电路图案的反射区域和非反射区域。 衬底（300）包括顶层（306），其具有在至少四分之一波长的范围内的光学平坦度的顶表面和具有小于约1.0ppm /℃的热膨胀系数的底层（304） 反射掩模（12）以光刻方法用于通过用掩模（12）照射掩模（12）将所需电路图案的潜像（优选具有0.18μm及更小的设计规则）描绘到晶片（14）上。 辐射（优选具有3nm至50nm的波长），以便将来自掩模的反射区域的辐射反射到晶片（14）上。

公开(公告)号：US5985498A

公开(公告)日：1999-11-16

申请号：US259928

申请日：1999-03-01

申请人： Harry Levinson ,  Khanh B. Nguyen ,  Anna M. Minvielle

发明人： Harry Levinson ,  Khanh B. Nguyen ,  Anna M. Minvielle

IPC分类号： G03F7/20 ,  G03F9/00

CPC分类号： G03F7/2045

摘要： A method of characterizing linewidth errors in a lithography system 30 used to delineate a desired pattern onto an exposure site of a wafer 32. The pattern of a reticle 34 is transferred onto an exposure site 56 of a wafer 32 by projecting a slit of light extending in a slit direction y through the reticle while scanning the reticle and the wafer in a scanning direction x relative to the lens. The exposure site 56 is conceptually divided into a grid having one series of lines extending in the scan direction x and another series of lines extending in the slit direction y whereby points corresponding to perpendicular intersections of the lines may each be assigned a pair of coordinates (x,y). The linewidths of the pattern are measured for each of the points (x,y) and a linewidth error value ERROR (x,y) is generated for each of the points (x,y). An ERROR.sub.optical (y) value for each y coordinate is calculated by averaging the ERROR (x,y) values for each group of points (x,y) having a common y coordinate. In this manner, the contribution of optical aberrations to linewidth errors may be determined.

摘要翻译： 用于表征光刻系统30中的线宽误差的方法，用于将期望的图案划定到晶片32的曝光位置。标线片34的图案通过突出延伸的光的狭缝转移到晶片32的曝光位置56上 在相对于透镜的扫描方向x扫描掩模版和晶片的同时沿切割方向y穿过掩模版。 曝光位置56在概念上被划分为具有在扫描方向x上延伸的一系列线的栅格和沿狭缝方向y延伸的另一系列线，由此可以将对应于线的垂直交点的点分配一对坐标（ x，y）。 对于每个点（x，y）测量图案的线宽，并且为每个点（x，y）生成线宽误差值ERROR（x，y）。 通过对具有公共y坐标的每组点（x，y）的ERROR（x，y）值进行平均来计算每个y坐标的ERRORoptical（y）值。 以这种方式，可以确定光学像差对线宽误差的贡献。

公开(公告)号：US06178221B1

公开(公告)日：2001-01-23

申请号：US09205790

申请日：1998-12-04

申请人： Harry Levinson ,  Khanh B. Nguyen

发明人： Harry Levinson ,  Khanh B. Nguyen

IPC分类号： G21K500

CPC分类号： G03F7/70283 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/70233

摘要： A reflective lithography mask (12) including a substrate (40); a reflective coating (42); a plurality of absorbing blocks (44) covering certain regions of the reflective coating (42) in a manner corresponding to a desired circuit pattern; and a plurality of buffer blocks (46) situated between the covered regions of the reflective coating and the absorbing blocks. The buffer blocks (46) are made of an electrically conducting material, such as carbon in graphite form; tin oxide (and materials based on this compound) and/or indium oxide (and materials based on this compound). Since the buffer material is electrically conducting, rather than insulating, the risk of electrostatic discharge damage is reduced.

摘要翻译： 一种包括衬底（40）的反射光刻掩模（12）; 反射涂层（42）; 以对应于期望的电路图案的方式覆盖所述反射涂层（42）的某些区域的多个吸收块（44）; 以及位于反射涂层的被覆区域和吸收块之间的多个缓冲块（46）。 缓冲块（46）由导电材料制成，例如石墨形式的碳; 氧化锡（和基于该化合物的材料）和/或氧化铟（以及基于该化合物的材料）。 由于缓冲材料是导电的而不是绝缘的，所以减少了静电放电损坏的风险。

公开(公告)号：US20130132201A1

公开(公告)日：2013-05-23

申请号：US13813884

申请日：2010-08-06

申请人： Clarence C. Mysen ,  Khanh B. Nguyen ,  Jennifer Liu Low ,  Alice S. Tull ,  Gregory J. Friedman ,  Christopher M. Roat

发明人： Clarence C. Mysen ,  Khanh B. Nguyen ,  Jennifer Liu Low ,  Alice S. Tull ,  Gregory J. Friedman ,  Christopher M. Roat

IPC分类号： G06Q30/02

CPC分类号： G06Q30/0274

摘要： A bid for a content slot from a content provider is received. The bid includes a revenue-sharing bid. It is determined that the bid is a winning bid and content is presented from the content provider in the content slot. Presentation details are logged that include a time when the content was presented. At a later time, an indication is received of an action, the indication including an indication that the action is responsive to the content having been presented previously. Based on the action, the content provider is charged an appropriate amount based on the revenue sharing bid.

摘要翻译： 收到来自内容提供商的内容插槽的出价。 出价包括收益分享出价。 确定出价是中标，并且从内容插槽中的内容提供商呈现内容。 记录的内容包括内容呈现的时间。 在稍后的时间，接收到一个动作的指示，该指示包括该动作对先前呈现的内容做出响应的指示。 根据该操作，内容提供商将根据收益共享出价收取适当的金额。

公开(公告)号：US06414326B1

公开(公告)日：2002-07-02

申请号：US09386980

申请日：1999-08-31

申请人： Khanh B. Nguyen

发明人： Khanh B. Nguyen

IPC分类号： G02B2714

CPC分类号： G03F7/70558 ,  G03F7/70625 ,  G03F7/70641

摘要： A method of identifying a change in focus and a change in illumination from a best focus and a best dose at a region on a substrate corresponding to a point in the image field of a lithographic printing tool is disclosed. The method includes forming a feature having a first pitch and a feature having a second pitch at the region on the substrate, and identifying a linewidth of the features. The identified linewidths are then used to determine the change in focus from the best focus and the change in dose from the best dose which would produce both the first pitch feature and the second pitch feature at the region.

摘要翻译： 公开了一种在与平版印刷工具的图像场中的点对应的基板上的区域上从最佳焦点和最佳剂量识别焦点变化和照明变化的方法。 该方法包括在衬底上的区域处形成具有第一间距的特征和具有第二间距的特征，以及识别特征的线宽。 所确定的线宽随后用于确定最佳焦点的焦点变化以及来自最佳剂量的剂量变化，该最佳剂量将产生该区域的第一音调特征和第二音调特征。

公开(公告)号：US06326319B1

公开(公告)日：2001-12-04

申请号：US09609746

申请日：2000-07-03

申请人： Christopher L. Pike ,  Khanh B. Nguyen ,  Christopher F. Lyons

发明人： Christopher L. Pike ,  Khanh B. Nguyen ,  Christopher F. Lyons

IPC分类号： H01F1002

CPC分类号： H01L21/02312 ,  G03F7/16 ,  G03F7/162 ,  H01L21/02109 ,  H01L21/02307 ,  H01L21/312 ,  H01L21/3125

摘要： There is provided a method for applying a lower viscosity coating liquid onto a semiconductor wafer substrate so as to prevent adhesion loss and to maintain low defect level characteristics. This is achieved by priming the substrate with a bonding agent at a temperature in the range of 18° C. to 50° C. for a short amount of time. This is performed prior to the application of a liquid solvent. As a result, there is overcome the problems of poor adhesion to the substrates and high defect levels in the coated UTR films.

摘要翻译： 提供了一种将低粘度涂布液施加到半导体晶片衬底上以防止粘附损失并保持低缺陷水平特性的方法。 这是通过用粘合剂在18℃至50℃的温度范围内引发基底短时间来实现的。 这是在施加液体溶剂之前进行的。 结果，克服了在涂覆的UTR膜中对基材的粘附性差和高缺陷水平的问题。

公开(公告)号：US6156658A

公开(公告)日：2000-12-05

申请号：US203774

申请日：1998-12-02

申请人： Fei Wang ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Scott A. Bell ,  Harry J. Levinson ,  Chih Yuh Yang

发明人： Fei Wang ,  Christopher F. Lyons ,  Khanh B. Nguyen ,  Scott A. Bell ,  Harry J. Levinson ,  Chih Yuh Yang

IPC分类号： H01L21/027 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/32139 ,  H01L21/0274 ,  H01L21/32136

摘要： In one embodiment, the present invention relates to a method of forming a metal line, involving the steps of providing a semiconductor substrate comprising a metal layer, an oxide layer over the metal layer, and a silicon layer over the oxide layer; depositing an ultra-thin photoresist over the silicon layer, the ultra-thin photoresist having a thickness less than about 2,000 .ANG.; irradiating the ultra-thin photoresist with electromagnetic radiation having a wavelength of about 250 nm or less; developing the ultra-thin photoresist exposing a portion of the silicon layer; etching the exposed portion of the silicon layer exposing a portion of the oxide layer; etching the exposed portion of the oxide layer exposing a portion of the metal layer; and etching the exposed portion of the metal layer thereby forming the metal line.

摘要翻译： 在一个实施例中，本发明涉及一种形成金属线的方法，包括以下步骤：提供包括金属层的半导体衬底，金属层上的氧化物层和氧化物层上的硅层; 在硅层上沉积超薄光致抗蚀剂，超薄光致抗蚀剂的厚度小于约2,000安培; 用波长约250nm或更小的电磁辐射照射超薄光致抗蚀剂; 开发暴露一部分硅层的超薄光刻胶; 蚀刻暴露出氧化物层的一部分的硅层的暴露部分; 蚀刻暴露出金属层的一部分的氧化物层的暴露部分; 并且蚀刻金属层的暴露部分从而形成金属线。

公开(公告)号：US06057206A

公开(公告)日：2000-05-02

申请号：US410526

申请日：1999-10-01

申请人： Khanh B. Nguyen ,  Marina Plat ,  Christopher F. Lyons ,  Harry J. Levinson

发明人： Khanh B. Nguyen ,  Marina Plat ,  Christopher F. Lyons ,  Harry J. Levinson

IPC分类号： H01L23/544 ,  H01L21/76

CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/54493 ,  H01L2924/0002

摘要： A method of forming an alignment mark protection structure is disclosed and includes forming an alignment mark protection layer over a substrate which has an alignment mark associated therewith. The method also includes forming a negative photoresist layer over the alignment mark protection layer and removing a portion of the negative photoresist layer which does not overlie the alignment mark. The removal exposes a portion of the alignment mark protection layer which does not overlie the alignment mark and the exposed portion of the alignment mark protection layer is then removed. Preferably, the removal of a portion of the negative photoresist includes selectively exposing a peripheral portion thereof using an edge-bead removal tool, thereby allowing for the formation of an alignment mark protection structure without an extra masking step.

摘要翻译： 公开了一种形成对准标记保护结构的方法，并且包括在具有与其相关联的对准标记的衬底上形成对准标记保护层。 该方法还包括在对准标记保护层上形成负光致抗蚀剂层，并且去除不覆盖对准标记的负光致抗蚀剂层的一部分。 去除暴露出不覆盖对准标记的对准标记保护层的一部分，然后去除对准标记保护层的暴露部分。 优选地，去除负光致抗蚀剂的一部分包括使用边缘珠去除工具选择性地暴露其周边部分，从而允许形成对准标记保护结构而没有额外的掩模步骤。