公开(公告)号：US06329237B1

公开(公告)日：2001-12-11

申请号：US09466896

申请日：1999-12-20

申请人： Kyong Min Kim ,  Chan Lim ,  Kil Ho Lee ,  Ki Seon Park

发明人： Kyong Min Kim ,  Chan Lim ,  Kil Ho Lee ,  Ki Seon Park

IPC分类号： H01L218242

CPC分类号： H01L21/31691 ,  C23C16/405 ,  C23C16/409 ,  C23C16/56 ,  H01L28/55

摘要： There is disclosed a method of making a high dielectric capacitor of a semiconductor device using Ta2O5, BST((Ba1−xSrx)TiO3) etc. of a high dielectric characteristic as a capacitor dielectric film in a very high integrated memory device. The present invention has its object to provide a method of manufacturing a high dielectric capacitor of a semiconductor device, which can effectively remove carbon contained within the thin film after deposition of the BST film and defects of oxygen depletion caused upon deposition of the thin film and which can also remove carbon contained within the thin film after deposition of the tantalum oxide film and defects of oxygen depletion caused upon deposition of the thin film, without further difficult processes or without any deterioration of the electrical characteristic of the capacitor. It employs the technology which is able to effectively removing defects of carbon and oxygen depletion within the thin film, by forming a plasma O3 gas having a good reactivity and by processing the plasma for the BST thin film and tantalum oxide film. Thus, it can extend the lifetime of the activated oxygen of oxygen, which had been a problem in processing a conventional UV-O3, by means of plasma process using O3 gas. Therefore, it can effectively remove defects of carbon and oxygen within the BST thin film and tantalum oxide film without complicating the process or deteriorating the electrical characteristic of the capacitor. The present invention also proposes a detailed process condition, which can optimize the plasma process using O3 gas.

摘要翻译： 公开了在非常高的集成存储器件中使用具有高介电特性的Ta2O5，BST（（Ba1-xSrx）TiO3）等作为电容器电介质膜的半导体器件的高介电电容器的方法。 本发明的目的是提供一种制造半导体器件的高介电电容器的方法，其可以有效地去除沉积BST膜之后的薄膜中包含的碳和沉积薄膜时引起的氧耗损缺陷， 其也可以在沉积氧化钽膜之后，除去薄膜中所含的碳和沉积薄膜所引起的氧耗尽的缺陷，而不需要进一步的困难处理或不会使电容器的电特性恶化。 通过形成具有良好反应性的等离子体O 3气体和通过处理BST薄膜和氧化钽膜的等离子体，采用能够有效地去除薄膜内的碳和氧缺乏的缺陷的技术。 因此，通过使用O 3气体的等离子体处理，可以延长氧气的活化氧的寿命，这在处理常规的UV-O 3中是一个问题。 因此，可以有效地去除BST薄膜和氧化钽膜内的碳和氧的缺陷，而不会使工艺复杂化或劣化电容器的电特性。 本发明还提出了一种详细的工艺条件，其可以优化使用O 3气体的等离子体工艺。

公开(公告)号：US20100047991A1

公开(公告)日：2010-02-25

申请号：US12609670

申请日：2009-10-30

申请人： Kil-Ho Lee ,  Chan Lim

发明人： Kil-Ho Lee ,  Chan Lim

IPC分类号： H01L21/314 ,  H01L21/02

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S257/914 ,  H01L2924/00

摘要： A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

摘要翻译： 提供了高k电介质膜，形成高k电介质膜的方法以及形成相关半导体器件的方法。 高k电介质膜包括具有第一氮含量和第一硅含量的金属 - 氮氧化硅的底层和具有第二氮含量和第二硅含量的金属 - 氮氧化硅的顶层。 第二氮含量高于第一氮含量，第二硅含量高于第一硅含量。

公开(公告)号：US07405482B2

公开(公告)日：2008-07-29

申请号：US11342370

申请日：2006-01-27

申请人： Kil-Ho Lee ,  Chan Lim

发明人： Kil-Ho Lee ,  Chan Lim

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S257/914 ,  H01L2924/00

摘要： A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

摘要翻译： 提供了高k电介质膜，形成高k电介质膜的方法以及形成相关半导体器件的方法。 高k电介质膜包括具有第一氮含量和第一硅含量的金属 - 氮氧化硅的底层和具有第二氮含量和第二硅含量的金属 - 氮氧化硅的顶层。 第二氮含量高于第一氮含量，第二硅含量高于第一硅含量。

公开(公告)号：US07655099B2

公开(公告)日：2010-02-02

申请号：US12117274

申请日：2008-05-08

申请人： Kil-Ho Lee ,  Chan Lim

发明人： Kil-Ho Lee ,  Chan Lim

IPC分类号： H01L21/336

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S257/914 ,  H01L2924/00

摘要： A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

摘要翻译： 提供了高k电介质膜，形成高k电介质膜的方法以及形成相关半导体器件的方法。 高k电介质膜包括具有第一氮含量和第一硅含量的金属 - 氮氧化硅的底层和具有第二氮含量和第二硅含量的金属 - 氮氧化硅的顶层。 第二氮含量高于第一氮含量，第二硅含量高于第一硅含量。

公开(公告)号：US20060194451A1

公开(公告)日：2006-08-31

申请号：US11342370

申请日：2006-01-27

申请人： Kil-Ho Lee ,  Chan Lim

发明人： Kil-Ho Lee ,  Chan Lim

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S257/914 ,  H01L2924/00

摘要： A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

摘要翻译： 提供了高k电介质膜，形成高k电介质膜的方法以及形成相关半导体器件的方法。 高k电介质膜包括具有第一氮含量和第一硅含量的金属 - 氮氧化硅的底层和具有第二氮含量和第二硅含量的金属 - 氮氧化硅的顶层。 第二氮含量高于第一氮含量，第二硅含量高于第一硅含量。

公开(公告)号：US07923336B2

公开(公告)日：2011-04-12

申请号：US12609670

申请日：2009-10-30

申请人： Kil-Ho Lee ,  Chan Lim

发明人： Kil-Ho Lee ,  Chan Lim

IPC分类号： H01L21/316

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S257/914 ,  H01L2924/00

摘要： A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

摘要翻译： 提供了高k电介质膜，形成高k电介质膜的方法以及形成相关半导体器件的方法。 高k电介质膜包括具有第一氮含量和第一硅含量的金属 - 氮氧化硅的底层和具有第二氮含量和第二硅含量的金属 - 氮氧化硅的顶层。 第二氮含量高于第一氮含量，第二硅含量高于第一硅含量。

公开(公告)号：US20080246100A1

公开(公告)日：2008-10-09

申请号：US12117274

申请日：2008-05-08

申请人： Kil-Ho Lee ,  Chan Lim

发明人： Kil-Ho Lee ,  Chan Lim

IPC分类号： H01L29/78 ,  H01L29/02 ,  B05D5/12 ,  H05H1/00

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518 ,  H01L2924/0002 ,  Y10S257/914 ,  H01L2924/00

摘要： A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

摘要翻译： 提供了高k电介质膜，形成高k电介质膜的方法以及形成相关半导体器件的方法。 高k电介质膜包括具有第一氮含量和第一硅含量的金属 - 氮氧化硅的底层和具有第二氮含量和第二硅含量的金属 - 氮氧化硅的顶层。 第二氮含量高于第一氮含量，第二硅含量高于第一硅含量。

公开(公告)号：US06486021B2

公开(公告)日：2002-11-26

申请号：US09727584

申请日：2000-12-04

申请人： Min-Soo Kim ,  Chan Lim

发明人： Min-Soo Kim ,  Chan Lim

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/31604 ,  H01L27/10814 ,  H01L28/90

摘要： A semiconductor device for use in a memory cell includes an active matrix an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of lower electrodes formed on top of the conductive plugs, Ta2O5 films formed on the lower electrodes, composite films formed on the Ta2O5 films and upper electrodes formed on the composite films.

摘要翻译： 用于存储单元的半导体器件包括有源矩阵，设置有半导体衬底的有源矩阵，形成在半导体衬底上的多个晶体管和与晶体管电连接的导电插头，多个下电极形成在 导电插头，形成在下电极上的Ta2O5膜，形成在Ta2O5膜上的复合膜和形成在复合膜上的上电极。

公开(公告)号：US06387749B1

公开(公告)日：2002-05-14

申请号：US09625364

申请日：2000-07-25

申请人： Chan Lim

发明人： Chan Lim

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  C23C16/0272 ,  C23C16/308 ,  H01L21/3145 ,  H01L21/31604 ,  H01L28/56

摘要： The present invention relates generally to a method of manufacturing a semiconductor device. There is disclosed a method of manufacturing a semiconductor device capable of obtaining a higher static capacity and a lower leak current characteristic. According to the present invention, the method includes forming a lower electrode and forming a tantalum oxide film. In particular, it performs a plasma process during the process of forming the tantalum oxide film, and in the last step of forming the tantalum oxide firm it controls the amount of source fluid to form a tantalum oxy-nitride film, thus forming an upper electrode.

摘要翻译： 本发明一般涉及制造半导体器件的方法。 公开了一种制造能够获得较高静电容量和较低漏电流特性的半导体器件的方法。 根据本发明，该方法包括形成下电极并形成氧化钽膜。 特别是，在形成氧化钽膜的过程中，进行等离子体处理，在形成钽氧化物的最后步骤中，控制源流体的量来形成氮氧化钽膜，由此形成上电极 。

公开(公告)号：US09293319B2

公开(公告)日：2016-03-22

申请号：US13044134

申请日：2011-03-09

申请人： Brian Dolan ,  Robert J. Hanson ,  Chan Lim

发明人： Brian Dolan ,  Robert J. Hanson ,  Chan Lim

IPC分类号： B08B3/00 ,  H01L21/02 ,  H01L21/66

CPC分类号： H01L21/02071 ,  H01L22/12 ,  H01L22/20

摘要： Methods of removing metal from a portion of a substrate are useful in integrated circuit fabrication. Methods include exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent, and exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent.

摘要翻译： 从基板的一部分去除金属的方法在集成电路制造中是有用的。 方法包括将底物暴露于包含至少一种氧化剂和至少一种还原剂的氧化环境中，并将底物暴露于包含至少一种还原剂和至少一种氧化剂的还原环境中。