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    Method and system for interfacing a plurality of memory devices using an MMC/SD protocol
    1.
    发明授权
    Method and system for interfacing a plurality of memory devices using an MMC/SD protocol 失效
    使用MMC / SD协议来连接多个存储器件的方法和系统

    公开(公告)号：US07831755B2

    公开(公告)日：2010-11-09

    申请号：US12034053

    申请日：2008-02-20

    申请人： Kil-Joong Yun ,  Seon Taek Kim ,  Jae Hoon Lee

    发明人： Kil-Joong Yun ,  Seon Taek Kim ,  Jae Hoon Lee

    IPC分类号： H05K7/10 ,  G06F13/14 ,  G06F13/36

    CPC分类号： G06F13/385

    摘要： A method for establishing an interface between a host and a plurality of memory devices of a system that utilizes a Multimedia Card (MMC) or Digital (SD) protocol according to an interleaving scheme. A host sequentially transmits a first sequence of commands and data to a system bus in order to allow a first memory device among the memory devices to perform a first operation. The host then transmits a second sequence of commands and data to the system bus to allow a second memory device among the memory devices to perform a second operation after transmitting the first sequence of commands and data.

    摘要翻译： 一种用于根据交织方案在主机与利用多媒体卡（MMC）或数字（SD））协议的系统的存储设备之间建立接口的方法。 主机顺序地向系统总线发送第一序列命令和数据，以便允许存储器件中的第一存储器件执行第一操作。 然后主机向系统总线发送第二序列命令和数据，以允许存储器件中的第二存储器件在发送第一命令序列和数据之后执行第二操作。

    Vertical group III-nitride light emitting device and method for manufacturing the same
    3.
    发明授权
    Vertical group III-nitride light emitting device and method for manufacturing the same 有权
    垂直III族氮化物发光器件及其制造方法

    公开(公告)号：US08664019B2

    公开(公告)日：2014-03-04

    申请号：US12271464

    申请日：2008-11-14

    申请人： Jae Hoon Lee ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

    发明人： Jae Hoon Lee ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/32

    摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.

    摘要翻译： 提供了垂直III族氮化物发光器件及其制造方法。 发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂Al x Ga y In 1-x-y N层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。 未掺杂的GaN层在其顶表面上形成粗糙图案。

    Power factor correction circuit for reducing distortion of input current
    4.
    发明授权
    Power factor correction circuit for reducing distortion of input current 有权
    用于减少输入电流失真的功率因数校正电路

    公开(公告)号：US08320144B2

    公开(公告)日：2012-11-27

    申请号：US12674618

    申请日：2008-08-22

    申请人： Jae Hoon Lee

    发明人： Jae Hoon Lee

    IPC分类号： H02M7/757 ,  H02M7/758

    CPC分类号： G05F1/70

    摘要： The present invention relates to a power factor correction circuit that can reduce distortion of input current in a switching mode power supply. The power factor correction circuit provided in the present invention basically comprises a first inductor which is electrically connected at a first end thereof to an input terminal, a second coil that is coupled to the first inductor to form an induced voltage, a switch electrically connected to the a second terminal of the first inductor, and a switching control unit for controlling turn-on and turn-off of the switch. In such a power factor correction circuit of the present invention, the switching control unit is configured to differently set a turn-on period of the switch depending on the input voltage by generating a signal for controlling the turn-off of the switch using a second coil voltage induced at the secondary coil of the inductor by input voltage or a directly sensed input voltage. Accordingly, distortion of input current can be effectively corrected.

    摘要翻译： 本发明涉及能够减少开关模式电源中的输入电流的失真的功率因数校正电路。 本发明提供的功率因数校正电路基本上包括：第一电感器，其第一端电连接到输入端子;第二线圈，其耦合到第一电感器以形成感应电压;开关，电连接到 第一电感器的第二端子和用于控制开关的接通和断开的开关控制单元。 在本发明的这种功率因数校正电路中，开关控制单元被配置为根据输入电压不同地设置开关的导通周期，通过产生用于控制开关的关断的信号，使用第二 通过输入电压或直接感应的输入电压在电感的次级线圈感应的线圈电压。 因此，可以有效地校正输入电流的失真。

    Apparatus for easing impact on boom of excavator and method of controlling the same
    5.
    发明授权
    Apparatus for easing impact on boom of excavator and method of controlling the same 有权
    减轻对挖掘机吊臂影响的装置及其控制方法

    公开(公告)号：US07934377B2

    公开(公告)日：2011-05-03

    申请号：US11977650

    申请日：2007-10-25

    申请人： Dong Soo Kim ,  Jae Hoon Lee ,  Chun Seung Lee ,  Jae Hong Kim ,  Joong Seon Joh ,  Eun Tae Jeung

    发明人： Dong Soo Kim ,  Jae Hoon Lee ,  Chun Seung Lee ,  Jae Hong Kim ,  Joong Seon Joh ,  Eun Tae Jeung

    IPC分类号： F16D31/02

    CPC分类号： E02F9/2207 ,  E02F9/2285 ,  E02F9/2292 ,  F15B21/008 ,  F15B21/087 ,  F15B2211/20538 ,  F15B2211/20592 ,  F15B2211/3144 ,  F15B2211/329 ,  F15B2211/36 ,  F15B2211/6054 ,  F15B2211/6313 ,  F15B2211/6316 ,  F15B2211/6346 ,  F15B2211/7053 ,  F15B2211/8616

    摘要： An apparatus for easing an impact on a boom of an excavator and a method of controlling the same are disclosed, which can minimize the vibration occurring in the boom due to the impact on a boom cylinder by actively controlling an amount of hydraulic fluid being supplied to the boom cylinder when the operation of the boom cylinder is suddenly stopped due to an operator's sudden manipulation of an operation lever for a working device. The apparatus includes first and second hydraulic pumps; a boom cylinder; a main control valve; an operation lever for supplying pilot signal pressure to a spool of the main control valve when an operator manipulates the operation lever; operation lever detection means for detecting boom up and boom down signal pressures according to an amount of manipulation of the operation lever; boom cylinder pressure detection means for detecting pressures generated in a large chamber and a small chamber of the boom cylinder; a controller for calculating and outputting a control signal of the main control valve if the boom cylinder has been suddenly stopped; and boom vibration preventing means for controlling the pilot signal pressure being supplied from the second hydraulic pump to the main control valve.

    摘要翻译： 公开了一种用于减轻对挖掘机的起重臂的冲击的装置及其控制方法，其可以通过主动地控制供给至动臂的液压流体的量来最小化由于对动臂缸的冲击而引起的动臂中产生的振动 当操作者突然操作用于工作装置的操作杆时，动臂缸的操作突然停止时的动臂缸。 该装置包括第一和第二液压泵; 动臂缸; 主控阀; 操作杆，用于当操作者操作操作杆时，将主控信号压力提供给主控制阀的阀芯; 操作杆检测装置，用于根据操作杆的操纵量检测吊杆上升和吊杆下降信号压力; 用于检测在动臂缸的大室和小室中产生的压力的动臂缸压力检测装置; 控制器，用于如果动臂缸突然停止则计算和输出主控制阀的控制信号; 以及用于控制从第二液压泵供给至主控制阀的先导信号压力的起重臂振动防止装置。

    Transport Molecules Using Reverse Sequence HIV-TAT Polypeptides
    6.
    发明申请
    Transport Molecules Using Reverse Sequence HIV-TAT Polypeptides 审中-公开
    运输分子使用反向序列HIV-TAT多肽

    公开(公告)号：US20100093639A1

    公开(公告)日：2010-04-15

    申请号：US12520964

    申请日：2007-12-12

    申请人： Jacob M. Waugh ,  Jae Hoon Lee

    发明人： Jacob M. Waugh ,  Jae Hoon Lee

    IPC分类号： A61K38/08 ,  C07K7/06 ,  C12N9/00 ,  A61P37/02

    CPC分类号： A61K47/645

    摘要： This invention relates to novel transport molecules that comprise a polypeptide comprising amino acid residues arranged in a sequence that is the reverse-sequence of basic portion of the HIV-TAT protein. The novel transport polypeptides are useful for transmembrane or intracellular delivery of cargo molecules, non-limiting examples of which include polypeptides and nucleic acids. The novel transport polypeptides may be covalently or non-covalenty bound to the cargo molecules.

    摘要翻译： 本发明涉及包含多肽的新型转运分子，所述多肽包含以与HIV-TAT蛋白质的基本部分相反的序列排列的氨基酸残基。 新型转运多肽可用于货物分子的跨膜或细胞内递送，其非限制性实例包括多肽和核酸。 新型转运多肽可以与货物分子共价或非共价结合。

    Method for manufacturing vertical group III-nitride light emitting device
    8.
    发明授权
    Method for manufacturing vertical group III-nitride light emitting device 有权
    垂直III族氮化物发光器件的制造方法

    公开(公告)号：US07485482B2

    公开(公告)日：2009-02-03

    申请号：US11401329

    申请日：2006-04-11

    申请人： Jae Hoon Lee ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

    发明人： Jae Hoon Lee ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/20 ,  H01L33/405 ,  H01L2933/0083

    摘要： The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.

    摘要翻译： 本发明提供一种提高外部提取效率的垂直III族氮化物发光器件及其制造方法。 该方法包括在碱性衬底上形成未掺杂的GaN层和绝缘层。 然后，选择性地蚀刻绝缘层以形成绝缘图案，并且在绝缘层上依次形成n掺杂的Al x Ga y In 1（1-xy）N层，有源层和p掺杂的AlmGanIn（1-m）N层 模式。 在p掺杂的AlmGanIn（1-m-n）N层上形成导电性基板。 去除基本衬底，未掺杂的GaN层和绝缘图案，并且在n掺杂Al x Ga y In（1-x-y）N层的暴露表面的一部分上形成n电极。

    Vertical GaN-based LED and method of manufacturing the same
    9.
    发明授权
    Vertical GaN-based LED and method of manufacturing the same 有权
    垂直GaN基LED及其制造方法

    公开(公告)号：US07442569B2

    公开(公告)日：2008-10-28

    申请号：US11878503

    申请日：2007-07-25

    申请人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

    发明人： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

    IPC分类号： H01L21/00 ,  H01L29/22

    CPC分类号： H01L33/14 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32

    摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

    摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极。 在n电极下形成AlGaN层。 在AlGaN层下形成未掺杂的GaN层，以向AlGaN层的结界面提供二维电子气层。 GaN基LED结构包括依次形成在未掺杂的GaN层下面的n型GaN层，有源层和p型GaN层。 在GaN基LED结构下方形成p电极。 导电性基板形成在p电极的下方。