摘要:
A power converter includes a shunt resistor constituted by a shunt resistance and a plurality of main electrodes made of a sheet-like resistive material. In the shunt resistor, plates lower in volume electric resistivity than the resistive material, higher in thermal conductivity than the resistive material and thicker in thickness than the resistive material are fixedly attached by solder, to the side surfaces of the main electrodes opposite to the side surfaces with which the main electrodes are fixedly attached to an insulating layer. At least one plate main electrode for electrically connecting with main circuit wiring is provided in each of the plates. At least one constricted portion is formed between each of the plate main electrodes and the shunt resistance. Plate detection electrodes for detecting a voltage between the opposite ends of the shunt resistance is provided on the plates near the shunt resistance portion.
摘要:
A power converter includes a shunt resistor constituted by a shunt resistance and a plurality of main electrodes made of a sheet-like resistive material. In the shunt resistor, plates lower in volume electric resistivity than the resistive material, higher in thermal conductivity than the resistive material and thicker in thickness than the resistive material are fixedly attached by solder, to the side surfaces of the main electrodes opposite to the side surfaces with which the main electrodes are fixedly attached to an insulating layer. At least one plate main electrode for electrically connecting with main circuit wiring is provided in each of the plates. At least one constricted portion is formed between each of the plate main electrodes and the shunt resistance. Plate detection electrodes for detecting a voltage between the opposite ends of the shunt resistance is provided on the plates near the shunt resistance portion.
摘要:
Technology leading to a size reduction in a power conversion apparatus comprising a cooling function and technology relating to enhancing productivity and enhancing reliability necessary for commercial production are provided. Series circuits comprising an upper arm and lower arm of an inverter circuit are built in a single semiconductor module 500. The semiconductor module has cooling metal on two sides. An upper arm semiconductor chip and lower arm semiconductor chip are wedged between the cooling metals. The semiconductor module is inserted inside a channel case main unit 214. A DC positive electrode terminal 532, a DC negative electrode terminal 572, and an alternating current terminal 582 of a semiconductor chip are disposed in the semiconductor module. The DC terminals 532 and 572 are electrically connected with a terminal of a capacitor module. The alternating current terminal 582 is electrically connected with a motor generator via an AC connector.
摘要:
Technology leading to a size reduction in a power conversion apparatus comprising a cooling function and technology relating to enhancing productivity and enhancing reliability necessary for commercial production are provided. Series circuits comprising an upper arm and lower arm of an inverter circuit are built in a single semiconductor module 500. The semiconductor module has cooling metal on two sides. An upper arm semiconductor chip and lower arm semiconductor chip are wedged between the cooling metals. The semiconductor module is inserted inside a channel case main unit 214. A DC positive electrode terminal 532, a DC negative electrode terminal 572, and an alternating current terminal 582 of a semiconductor chip are disposed in the semiconductor module. The DC terminals 532 and 572 are electrically connected with a terminal of a capacitor module. The alternating current terminal 582 is electrically connected with a motor generator via an AC connector.
摘要:
Technology leading to a size reduction in a power conversion apparatus comprising a cooling function and technology relating to enhancing productivity and enhancing reliability necessary for commercial production are provided. Series circuits comprising an upper arm and lower arm of an inverter circuit are built in a single semiconductor module 500. The semiconductor module has cooling metal on two sides. An upper arm semiconductor chip and lower arm semiconductor chip are wedged between the cooling metals. The semiconductor module is inserted inside a channel case main unit 214. A DC positive electrode terminal 532, a DC negative electrode terminal 572, and an alternating current terminal 582 of a semiconductor chip are disposed in the semiconductor module. The DC terminals 532 and 572 are electrically connected with a terminal of a capacitor module. The alternating current terminal 582 is electrically connected with a motor generator via an AC connector.
摘要:
A double-face-cooled semiconductor module with an upper arm and a lower arm of an inverter circuit includes first and second heat dissipation members, each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member. On the conducting member on the first dissipation plate is provided with a fixing portion that fixes a collector surface of the semiconductor chip and a gate conductor connected to a gate terminal of the semiconductor module. The gate electrode terminal and the gate conductor are wire bonded. The conducting member on the second heat dissipation member is connected to an emitter surface of the semiconductor chip connected to the first heat dissipation member. The productivity and reliability are improved by most of formation operations for the upper and lower arms series circuit on one of the heat dissipation member.
摘要:
A power converter of the present invention includes at least two power semiconductor modules having a plurality of switching devices, at least two cooling jackets having a coolant path for cooling the plurality of power semiconductor modules and equipped with the power semiconductor modules, a capacitor module interposed between the at least two cooling jackets, and a connector provided in the at least two cooling jackets for connecting the coolant path.
摘要:
A power semiconductor module includes a first package having an upper arm circuit section, a second package having a lower arm circuit section, a metal case having a storage space to store the first package and the second package and an opening connecting with the storage space, and an intermediate connecting conductor to couple the upper arm circuit section with the lower arm circuit section; the case includes a first radiating section and a second radiating section facing the first radiating section through the storage space; the first package is arranged so that the arrangement direction of the first and second packages may be parallel to the respective surfaces facing the first and second radiating sections; and the intermediate connecting conductor couples an emitter side terminal extending from the first package with a collector side terminal extending from the second package in the storage space.
摘要:
A double-face-cooled semiconductor module with an upper arm and a lower arm of an inverter circuit includes first and second heat dissipation members, each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member. On the conducting member on the first dissipation plate is provided with a fixing portion that fixes a collector surface of the semiconductor chip and a gate conductor connected to a gate terminal of the semiconductor module. The gate electrode terminal and the gate conductor are wire bonded. The conducting member on the second heat dissipation member is connected to an emitter surface of the semiconductor chip connected to the first heat dissipation member. The productivity and reliability are improved by most of formation operations for the upper and lower arms series circuit on one of the heat dissipation member.
摘要:
First and second bases and composing a coolant path structure are arranged at the middle stage of the power converter, and semiconductor modules and a capacitor are arranged on both surfaces of the coolant path structure. Furthermore, through-holes are formed in the first and second bases, and cables of DC and AC circuits are laid via the through-holes.