ELECTROCHEMICAL CAPACITOR
    2.
    发明申请
    ELECTROCHEMICAL CAPACITOR 有权
    电化学电容器

    公开(公告)号:US20110075322A1

    公开(公告)日:2011-03-31

    申请号:US12891321

    申请日:2010-09-27

    IPC分类号: H01G9/155

    摘要: An electrochemical capacitor capable of increasing a capacity is proposed. The electrochemical capacitor is a positive electrode and a negative electrode formed over a surface plane of a substrate. Additionally, the electrochemical capacitor has an electrolyte, and the positive electrode and the negative electrode are in contact with a same surface plane of the electrolyte. In other words, the electrochemical capacitor has a positive electrode active material and a negative electrode active material over a surface plane of an electrolyte, a positive electrode current collector which is in contact with the positive electrode active material, and a negative electrode current collector which is in contact with the negative electrode active material. By the aforesaid structure, a capacity of the electrochemical capacitor can be increased.

    摘要翻译: 提出了能增加容量的电化学电容器。 电化学电容器是在基板的表面平面上形成的正极和负极。 此外,电化学电容器具有电解质,正极和负极与电解质的相同的表面接触。 换句话说,电化学电容器在电解质的表面上具有正极活性物质和负极活性物质,与正极活性物质接触的正极集电体和负极集电体 与负极活性物质接触。 通过上述结构,能够提高电化学电容器的容量。

    REDOX CAPACITOR AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    REDOX CAPACITOR AND MANUFACTURING METHOD THEREOF 有权
    REDOX电容器及其制造方法

    公开(公告)号:US20110073991A1

    公开(公告)日:2011-03-31

    申请号:US12891461

    申请日:2010-09-27

    IPC分类号: H01L27/08 H01L21/02

    摘要: To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used. As another example of the amorphous semiconductor including hydrogen, oxide semiconductor including hydrogen can be used. As typical examples of the oxide semiconductor including hydrogen, an amorphous semiconductor including a single-component oxide semiconductor such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide can be given. As another example of oxide semiconductor including hydrogen, a multi-component oxide semiconductor such as InMO3(ZnO)m (m>0 and M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co) can be used.

    摘要翻译: 提供可在室温下使用的氧化还原电容器及其制造方法。 包括氢的非晶半导体被用作氧化还原电容器的电解质。 作为包括氢的非晶半导体的典型实例,可以使用包括诸如非晶硅,非晶硅锗或无定形锗的半导体元件的非晶半导体。 作为包括氢的非晶半导体的另一例子,可以使用包括氢的氧化物半导体。 作为包括氢的氧化物半导体的典型实例,可以给出包括氧化锌,氧化钛,氧化镍,氧化钒和氧化铟等单组分氧化物半导体的非晶半导体。 作为包含氢的氧化物半导体的另一个实例,可以使用诸如InMO 3(ZnO)m(m> 0和M是选自Ga,Fe,Ni,Mn和Co中的一种或多种金属元素)的多组分氧化物半导体 。

    Electrochemical capacitor
    6.
    发明授权
    Electrochemical capacitor 有权
    电化学电容器

    公开(公告)号:US08755169B2

    公开(公告)日:2014-06-17

    申请号:US12891321

    申请日:2010-09-27

    IPC分类号: H01G9/00 H01G9/02

    摘要: An electrochemical capacitor capable of increasing a capacity is proposed. The electrochemical capacitor is a positive electrode and a negative electrode formed over a surface plane of a substrate. Additionally, the electrochemical capacitor has an electrolyte, and the positive electrode and the negative electrode are in contact with a same surface plane of the electrolyte. In other words, the electrochemical capacitor has a positive electrode active material and a negative electrode active material over a surface plane of an electrolyte, a positive electrode current collector which is in contact with the positive electrode active material, and a negative electrode current collector which is in contact with the negative electrode active material. By the aforesaid structure, a capacity of the electrochemical capacitor can be increased.

    摘要翻译: 提出了能增加容量的电化学电容器。 电化学电容器是在基板的表面平面上形成的正极和负极。 此外,电化学电容器具有电解质,正极和负极与电解质的相同的表面接触。 换句话说,电化学电容器在电解质的表面上具有正极活性物质和负极活性物质,与正极活性物质接触的正极集电体和负极集电体 与负极活性物质接触。 通过上述结构,能够提高电化学电容器的容量。

    Power storage device and method for manufacturing electrode

    公开(公告)号:US10658661B2

    公开(公告)日:2020-05-19

    申请号:US13596175

    申请日:2012-08-28

    摘要: An electrode and a power storage device each of which achieves better charge-discharge cycle characteristics and is less likely to deteriorate owing to separation of an active material, or the like are manufactured. As the electrode for the power storage device, an electrode including a current collector and an active material layer that is over the current collector and includes a particle containing niobium oxide and a granular active material is used, whereby the charge-discharge cycle characteristics of the power storage device can be improved. Moreover, contact between the granular active material and the particle containing niobium oxide makes the granular active material physically fixed; accordingly, deterioration due to expansion and contraction of the active material which occur along with charge and discharge of the power storage device, such as powdering of the active material layer or its separation from the current collector, can be suppressed.

    Power storage device
    8.
    发明授权
    Power storage device 有权
    蓄电装置

    公开(公告)号:US09362556B2

    公开(公告)日:2016-06-07

    申请号:US13307045

    申请日:2011-11-30

    摘要: A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.

    摘要翻译: 提供了一种具有改善的性能的蓄电装置,例如较高的放电容量,并且由于活性材料层的剥离等而导致的劣化不大可能。 在蓄电装置的电极中,作为可与锂合金化的材料,在集电体上使用磷掺杂非晶硅作为活性物质层,在活性物质层上沉积氧化铌作为含有铌的层 。 因此,能够提高蓄电装置的容量,能够提高循环特性和充放电效率。

    Redox capacitor and manufacturing method thereof
    9.
    发明授权
    Redox capacitor and manufacturing method thereof 有权
    氧化还原电容器及其制造方法

    公开(公告)号:US08952490B2

    公开(公告)日:2015-02-10

    申请号:US12891461

    申请日:2010-09-27

    摘要: To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used. As another example of the amorphous semiconductor including hydrogen, oxide semiconductor including hydrogen can be used. As typical examples of the oxide semiconductor including hydrogen, an amorphous semiconductor including a single-component oxide semiconductor such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide can be given. As another example of oxide semiconductor including hydrogen, a multi-component oxide semiconductor such as InMO3(ZnO)m (m>0 and M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co) can be used.

    摘要翻译: 提供可在室温下使用的氧化还原电容器及其制造方法。 包括氢的非晶半导体被用作氧化还原电容器的电解质。 作为包括氢的非晶半导体的典型实例,可以使用包括诸如非晶硅,非晶硅锗或无定形锗的半导体元件的非晶半导体。 作为包括氢的非晶半导体的另一例子,可以使用包括氢的氧化物半导体。 作为包括氢的氧化物半导体的典型实例,可以给出包括氧化锌,氧化钛,氧化镍,氧化钒和氧化铟等单组分氧化物半导体的非晶半导体。 作为包含氢的氧化物半导体的另一个实例,可以使用诸如InMO 3(ZnO)m(m> 0和M是选自Ga,Fe,Ni,Mn和Co中的一种或多种金属元素)的多组分氧化物半导体 。