Pigment dispersion paste for electrodeposition coating compositions, and electrodeposition coating composition
    2.
    发明申请
    Pigment dispersion paste for electrodeposition coating compositions, and electrodeposition coating composition 审中-公开
    用于电沉积涂料组合物的颜料分散糊剂和电沉积涂料组合物

    公开(公告)号:US20090234048A1

    公开(公告)日:2009-09-17

    申请号:US12382337

    申请日:2009-03-13

    IPC分类号: C08L1/00

    摘要: The present invention provides a pigment dispersion paste with improved storage stability, and an electrodeposition coating composition that enables energy saving in electrodeposition coating equipment and a reduction in the amount of electrodeposition coating equipment.The pigment dispersion paste of the present invention contains (i) a pigment-dispersing resin, (ii) a pigment component, (iii) a cellulose (A), (iv) a hydroxyalkyl imidazoline compound (B) and/or a compound (C), and (v) water;the pigment dispersion paste containing, per 100 parts by mass of the solids of the pigment-dispersing resin, 0.1 to 1,000 parts by mass of the pigment component, 0.1 to 25 parts by mass of the cellulose (A), 0.1 to 5 parts by mass of a hydroxyalkyl imidazoline compound (B) and/or 0.1 to 5 parts by mass of a compound (C); andthe pigment dispersion paste having, when adjusted to a solids concentration of 40 mass %, an TI value of 1.8 to 4.0 as measured by the pigment test method of JIS K 5101-6-2: wherein R1 is a C6-32 hydrocarbon group and R2 is a C2-6 alkylene group; wherein n is an integer from 11 to 16.

    摘要翻译: 本发明提供了一种具有改善的储存稳定性的颜料分散膏,以及能够在电沉积涂布设备中节能和减少电沉积涂布设备的电沉积涂料组合物。 本发明的颜料分散膏包含(i)颜料分散树脂,(ii)颜料成分,(iii)纤维素(A),(iv)羟烷基咪唑啉化合物(B)和/或化合物 C),(v)水; 颜料分散糊剂,相对于100质量份颜料分散性树脂的固体,将0.1〜1000质量份的颜料成分,0.1〜25质量份的纤维素(A),0.1〜5份的 羟烷基咪唑啉化合物(B)的质量和/或0.1〜5质量份的化合物(C); 并且当调节为40质量%的固体浓度时,通过JIS K 5101-6-2的颜料测试方法测量的TI值为1.8至4.0的颜料分散糊:其中R1是C6-32烃基 R2是C2-6亚烷基; 其中n为11至16的整数。

    SYSTEM OPERATIONS MANAGEMENT APPARATUS, SYSTEM OPERATIONS MANAGEMENT METHOD AND PROGRAM STORAGE MEDIUM

    公开(公告)号:US20160274965A1

    公开(公告)日:2016-09-22

    申请号:US15166485

    申请日:2016-05-27

    申请人: Kiyoshi Kato

    发明人: Kiyoshi Kato

    IPC分类号: G06F11/07

    摘要: In a system operations management apparatus, a burden to a system administrator when providing a decision criterion in detection of a failure in the future is reduced. The system operations management apparatus 1 includes a performance information accumulation unit 12, a model generation unit 30 and an analysis unit 31. The performance information accumulation unit 12 stores performance information including a plurality of types of performance values in a system in time series. The model generation unit 30 generates a correlation model including one or more correlations between the different types of performance values stored in the performance information accumulation unit 12 for each of a plurality of periods having one of a plurality of attributes. The analysis unit 31 performs abnormality detection of the performance information of the system which has been inputted by using the inputted performance information and the correlation model corresponding to the attribute of a period in which the inputted performance information has been acquired.

    System operations management apparatus, system operations management method and program storage medium

    公开(公告)号:US09384079B2

    公开(公告)日:2016-07-05

    申请号:US14589255

    申请日:2015-01-05

    申请人: Kiyoshi Kato

    发明人: Kiyoshi Kato

    摘要: In a system operations management apparatus, a burden to a system administrator when providing a decision criterion in detection of a failure in the future is reduced. The system operations management apparatus 1 includes a performance information accumulation unit 12, a model generation unit 30 and an analysis unit 31. The performance information accumulation unit 12 stores performance information including a plurality of types of performance values in a system in time series. The model generation unit 30 generates a correlation model including one or more correlations between the different types of performance values stored in the performance information accumulation unit 12 for each of a plurality of periods having one of a plurality of attributes. The analysis unit 31 performs abnormality detection of the performance information of the system which has been inputted by using the inputted performance information and the correlation model corresponding to the attribute of a period in which the inputted performance information has been acquired.

    Element substrate, inspecting method, and manufacturing method of semiconductor device
    6.
    发明授权
    Element substrate, inspecting method, and manufacturing method of semiconductor device 有权
    元件基板,检查方法和半导体器件的制造方法

    公开(公告)号:US09188631B2

    公开(公告)日:2015-11-17

    申请号:US13446614

    申请日:2012-04-13

    摘要: A substrate including a semiconductor layer, where characteristics of an element can be evaluated with high reliability, and an evaluating method thereof are provided. A substrate including a semiconductor layer of the invention has a closed-loop circuit in which an antenna coil and a semiconductor element are connected in series, and a surface of an area over which the circuit is formed is covered with an insulating film. By using such a circuit, a contactless inspection can be carried out. Further, a ring oscillator can be substituted for the closed-loop circuit.

    摘要翻译: 提供了包括可以以高可靠性评估元件的特性的半导体层的基板及其评价方法。 包括本发明的半导体层的衬底具有一个闭环电路,其中天线线圈和半导体元件串联连接,并且形成有电路的区域的表面被绝缘膜覆盖。 通过使用这样的电路,可以进行非接触检查。 此外,环形振荡器可以代替闭环电路。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08896046B2

    公开(公告)日:2014-11-25

    申请号:US13285450

    申请日:2011-10-31

    申请人: Kiyoshi Kato

    发明人: Kiyoshi Kato

    摘要: Provided is a semiconductor device with a novel structure in which stored data can be retained even when power is not supplied, and which does not have a limitation on the number of writing. The semiconductor device includes both a memory circuit including a transistor including an oxide semiconductor (in a broader sense, a transistor whose off-state current is sufficiently small), and a peripheral circuit such as a driver circuit including a transistor including a material other than an oxide semiconductor (that is, a transistor capable of operating at sufficiently high speed). Further, the peripheral circuit is provided in a lower portion and the memory circuit is provided in an upper portion, so that the area and size of the semiconductor device can be decreased.

    摘要翻译: 提供一种具有新颖结构的半导体器件,其中即使在未提供电力的情况下也可以保留存储的数据,并且对写入次数没有限制。 半导体器件包括包括氧化物半导体(在更广泛的意义上是截止电流足够小的晶体管)的晶体管的存储器电路和包括晶体管的诸如驱动器电路的外围电路,该晶体管包括除了 氧化物半导体(即,能够以足够高的速度运行的晶体管)。 此外,外围电路设置在下部,并且存储电路设置在上部,使得可以减小半导体器件的面积和尺寸。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08779433B2

    公开(公告)日:2014-07-15

    申请号:US13115239

    申请日:2011-05-25

    摘要: It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased.

    摘要翻译: 本发明的目的是提供一种具有新颖结构的半导体器件,其中即使在不提供电力的情况下也可以保持存储的数据,并且对写入数量没有限制。 半导体器件包括设置在第一晶体管上的第二晶体管和电容器。 使用具有相对于栅电极的蚀刻选择性的材料形成与第一晶体管的栅电极接触的第二晶体管的源电极。 通过使用相对于第一晶体管的栅电极具有蚀刻选择性的材料形成第二晶体管的源电极,可以减小布局的裕度,从而可以提高半导体器件的集成度。

    Semiconductor device and manufacturing method thereof
    10.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US08642987B2

    公开(公告)日:2014-02-04

    申请号:US12578650

    申请日:2009-10-14

    IPC分类号: H01L45/00

    摘要: The invention provides a novel memory for which process technology is relatively simple and which can store multivalued information by a small number of elements. A part of a shape of the first electrode in the first storage element is made different from a shape of the first electrode in the second storage element, and thereby voltage values which change electric resistance between the first electrode and the second electrode are varied, so that one memory cell stores multivalued information over one bit. By partially processing the first electrode, storage capacity per unit area can be increased.

    摘要翻译: 本发明提供了一种新颖的存储器,其工艺技术相对简单,并且可以通过少量元件存储多值信息。 使第一存储元件中的第一电极的形状的一部分与第二存储元件中的第一电极的形状不同,从而改变第一电极和第二电极之间改变电阻的电压值,因此 一个存储单元存储超过一位的多值信息。 通过部分地处理第一电极,可以增加每单位面积的存储容量。