公开(公告)号：US20110212599A1

公开(公告)日：2011-09-01

申请号：US13036330

申请日：2011-02-28

申请人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

发明人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/45578 ,  H01L21/02529 ,  H01L21/67109

摘要： Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, and including at least one second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the plurality of substrates are stacked, the method including the steps of: loading the plurality of substrates into the reaction chamber; and forming SiC films by supplying at least a silicon-containing gas and a chlorine-containing gas or a silicon/chlorine-containing gas through the first gas supply port and supplying at least a carbon-containing gas and a reduction gas through the second gas supply port.

摘要翻译： 提供一种使用基板处理设备制造半导体器件的方法，该基板处理设备包括其中多个基板以预定距离堆叠的反应室; 第一气体供给喷嘴，其安装成延伸到所述多个基板堆叠的区域; 第二气体供给喷嘴，其安装成在与堆叠所述多个基板的区域中延伸到与所述第一气体供给喷嘴的位置不同的位置; 第一分支喷嘴，其安装在所述第一气体供给喷嘴的平行于所述多个基板的主表面的方向上，所述第一分支喷嘴的至少一条线沿所述第二气体供给喷嘴的方向分支，并且包括至少一个第一气体供应 港口; 以及第二分支喷嘴，其在与所述多个基板的主表面平行的方向上安装在所述第二气体供给喷嘴处，所述第二分支喷嘴的至少一条线沿所述第一气体供给喷嘴的方向分支，并且包括至少一个第二喷嘴 供气口; 其特征在于，所述第一气体供给口和所述第二气体供给口沿所述多个基板层叠的方向彼此相邻地安装，所述方法包括以下步骤：将所述多个基板装载到所述反应室中; 以及通过经由所述第一气体供给口至少供给含硅气体和含氯气体或含硅/氯气体而形成SiC膜，并且通过所述第二气体供给至少含碳气体和还原气体 供应口。

公开(公告)号：US08889533B2

公开(公告)日：2014-11-18

申请号：US13580933

申请日：2011-02-22

申请人： Takafumi Sasaki ,  Yoshinori Imai ,  Koei Kuribayashi ,  Sadao Nakashima

发明人： Takafumi Sasaki ,  Yoshinori Imai ,  Koei Kuribayashi ,  Sadao Nakashima

IPC分类号： H01L21/20 ,  H01L21/36 ,  C23C16/455 ,  C23C16/32 ,  H01L21/02

CPC分类号： C23C16/45578 ,  C23C16/325 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S438/931

摘要： A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.

摘要翻译： 通过使用基板处理装置制造半导体器件的方法包括：反应室，被配置为处理以预定间隔堆叠的多个基板，其中来自第一气体供应入口的第一气体流和来自第二气体供应源的第二气体流 入口在这些气体流到达基板之前彼此交叉。 制造半导体器件的方法包括：将多个衬底装载到反应室中; 将来自所述第一气体供给口的含硅气体和含氯气体供给到所述反应室中，将来自所述第二气体供给口的含碳气体和还原气体供给到所述反应室内，并供给含掺杂剂的气体 从第一供气口或第二供气口进入反应室; 并从反应室中卸载基板。

公开(公告)号：US20120315767A1

公开(公告)日：2012-12-13

申请号：US13580933

申请日：2011-02-22

申请人： Takafumi Sasaki ,  Yoshinori Imai ,  Koei Kuribayashi ,  Sadao Nakashima

发明人： Takafumi Sasaki ,  Yoshinori Imai ,  Koei Kuribayashi ,  Sadao Nakashima

IPC分类号： H01L21/31 ,  C23C16/32

CPC分类号： C23C16/45578 ,  C23C16/325 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S438/931

摘要： A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.

摘要翻译： 通过使用基板处理装置制造半导体器件的方法包括：反应室，被配置为处理以预定间隔堆叠的多个基板，其中来自第一气体供应入口的第一气体流和来自第二气体供应源的第二气体流 入口在这些气体流到达基板之前彼此交叉。 制造半导体器件的方法包括：将多个衬底装载到反应室中; 将来自所述第一气体供给口的含硅气体和含氯气体供给到所述反应室中，将来自所述第二气体供给口的含碳气体和还原气体供给到所述反应室内，并供给含掺杂剂的气体 从第一供气口或第二供气口进入反应室; 并从反应室中卸载基板。

公开(公告)号：US08450220B2

公开(公告)日：2013-05-28

申请号：US12825005

申请日：2010-06-28

申请人： Takafumi Sasaki ,  Sadao Nakashima ,  Yoshinori Imai ,  Koei Kuribayashi

发明人： Takafumi Sasaki ,  Sadao Nakashima ,  Yoshinori Imai ,  Koei Kuribayashi

IPC分类号： H01L21/469

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/4412 ,  C23C16/45514 ,  C23C16/45578 ,  C23C16/54 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02529

摘要： There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.

摘要翻译： 提供了一种用于在高温条件下生长SiC外延膜的衬底处理装置，半导体器件的制造方法和制造衬底的方法。 基板处理装置包括：反应室; 第一气体供给系统，其配置为至少供给含有硅原子的气体和含有氯原子的气体，或者含有硅和氯原子的气体; 构造成供给至少一种还原气体的第二气体供给系统; 第三气体供给系统，被配置为至少提供含有碳原子的气体; 连接到第一气体供应系统或第一和第三气体供应系统的第一气体供应喷嘴; 连接到第二气体供应系统或第二和第三气体供应系统的第二气体供应喷嘴; 以及控制器，被配置为控制第一至第三气体供应系统。

公开(公告)号：US08409352B2

公开(公告)日：2013-04-02

申请号：US13036330

申请日：2011-02-28

申请人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

发明人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/45578 ,  H01L21/02529 ,  H01L21/67109

摘要： An apparatus including a reaction chamber in which substrates are stacked; a first gas supply nozzle installed in a region in which the substrates are stacked; a second gas supply nozzle installed in a different position; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the substrates, a line of which is branched in a direction of the second gas supply nozzle, and including a first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the substrates, a line of which is branched in a direction of the first gas supply nozzle, and including a second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the substrates are stacked.

摘要翻译： 一种装置，包括堆叠基板的反应室; 安装在基板堆叠的区域中的第一气体供给喷嘴; 安装在不同位置的第二气体供给喷嘴; 第一分支喷嘴，其在与所述基板的主表面平行的方向上安装在所述第一气体供给喷嘴处，所述第一分支喷嘴的管线沿所述第二气体供给喷嘴的方向分支，并且包括第一气体供给口; 以及第二分支喷嘴，其沿着与所述基板的主表面平行的方向安装在所述第二气体供给喷嘴上，所述第二分支喷嘴的管线沿所述第一气体供给喷嘴的方向分支，并且包括第二气体供给口; 其中所述第一气体供给口和所述第二气体供给口沿着所述基板堆叠的方向彼此相邻地安装。

公开(公告)号：US08246749B2

公开(公告)日：2012-08-21

申请号：US11989488

申请日：2006-07-20

申请人： Jie Wang ,  Ryuji Yamamoto ,  Sadao Nakashima

发明人： Jie Wang ,  Ryuji Yamamoto ,  Sadao Nakashima

IPC分类号： C23C16/44 ,  H01L21/31

CPC分类号： H01L21/67109 ,  C23C16/4401

摘要： Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube.

摘要翻译： 公开了一种基板处理装置，其包括在其中处理基板的反应管，其中反应管包括外管，设置在外管内的内管和支撑部分，以支撑内管，内管和 支撑部分由石英或碳化硅制成，并且在支撑部分和内管之间设置有减震构件。

公开(公告)号：US20070275570A1

公开(公告)日：2007-11-29

申请号：US10573025

申请日：2005-01-20

申请人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Akira Morohashi ,  Keishin Yamazaki ,  Sadao Nakashima

发明人： Naoto Nakamura ,  Iwao Nakamura ,  Tomoharu Shimada ,  Akira Morohashi ,  Keishin Yamazaki ,  Sadao Nakashima

IPC分类号： H01L21/00

CPC分类号： H01L21/67303 ,  H01L21/324 ,  H01L21/67309

摘要： A heat treatment device where intervals between substrates supported by a supporter is reduced so that the number of substrates to be treated can be increased. A heat treatment device has a reaction furnace for treating substrates and a supporter for supporting the substrates in plural stages in the reaction furnace. The supporter has supporting plates in contact with the substrates and supporting members for supporting the supporting plates. A supporting plate and a supporting member are superposed on each other at least a part in the thickness direction.

摘要翻译： 一种热处理装置，其中由支撑体支撑的基板之间的间隔减小，使得可以增加待处理的基板的数量。 热处理装置具有用于处理基板的反应炉和用于在反应炉中多级支撑基板的支撑件。 支撑件具有与基板接触的支撑板和用于支撑支撑板的支撑构件。 支撑板和支撑构件在厚度方向上的至少一部分彼此重叠。

公开(公告)号：US20090311873A1

公开(公告)日：2009-12-17

申请号：US11989488

申请日：2006-07-20

申请人： Jie Wang ,  Ryuji Yamamoto ,  Sadao Nakashima

发明人： Jie Wang ,  Ryuji Yamamoto ,  Sadao Nakashima

IPC分类号： H01L21/30

CPC分类号： H01L21/67109 ,  C23C16/4401

摘要： Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube.

摘要翻译： 公开了一种基板处理装置，其包括在其中处理基板的反应管，其中反应管包括外管，设置在外管内的内管和支撑部分，以支撑内管，内管和 支撑部分由石英或碳化硅制成，并且在支撑部分和内管之间设置有减震构件。

公开(公告)号：US20080268644A1

公开(公告)日：2008-10-30

申请号：US12068330

申请日：2008-02-05

申请人： Kenji Kameda ,  Naonori Akae ,  Kenichi Suzaki ,  Yushin Takasawa ,  Sadao Nakashima

发明人： Kenji Kameda ,  Naonori Akae ,  Kenichi Suzaki ,  Yushin Takasawa ,  Sadao Nakashima

IPC分类号： H01L21/306

CPC分类号： C23C16/4405 ,  H01L21/3185

摘要： There are provided the steps of loading a substrate into a reaction vessel; forming a film on the substrate while supplying a film forming gas into the reaction vessel; unloading the substrate after film formation from the reaction vessel; supplying a cleaning gas into the reaction vessel while lowering a temperature in the reaction vessel and removing a deposit deposited on at least an inner wall of the reaction vessel in the film forming step.

摘要翻译： 提供了将基底装载到反应容器中的步骤; 在将所述成膜气体供给到所述反应容器中的同时在所述基板上形成膜; 从反应容器中成膜后卸载基材; 在降低反应容器内的温度的同时将清洗气体供给到反应容器中，并且在成膜步骤中除去沉积在反应容器的至少内壁上的沉积物。

公开(公告)号：US5658809A

公开(公告)日：1997-08-19

申请号：US403518

申请日：1995-03-13

申请人： Sadao Nakashima ,  Katsutoshi Izumi ,  Norihiko Ohwada ,  Tatsuhiko Katayama

发明人： Sadao Nakashima ,  Katsutoshi Izumi ,  Norihiko Ohwada ,  Tatsuhiko Katayama

IPC分类号： H01L21/76 ,  H01L21/02 ,  H01L21/265 ,  H01L21/31 ,  H01L21/762 ,  H01L21/86 ,  H01L27/00 ,  H01L27/12

CPC分类号： H01L21/26533 ,  H01L21/76243

摘要： A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.

摘要翻译： 一种通过将氧离子注入单晶硅衬底并在高温下在惰性气体气氛中进行退火处理的方法来制造具有电绝缘状态的掩埋氧化层上的单晶硅层的SOI衬底 以形成掩埋氧化物层。 在掩埋氧化物层的厚度成为与由注入氧形成的掩埋氧化物层的厚度一致的理论值的退火处理之后，基板的氧化处理在高温氧气氛中进行。