公开(公告)号：US08450220B2

公开(公告)日：2013-05-28

申请号：US12825005

申请日：2010-06-28

申请人： Takafumi Sasaki ,  Sadao Nakashima ,  Yoshinori Imai ,  Koei Kuribayashi

发明人： Takafumi Sasaki ,  Sadao Nakashima ,  Yoshinori Imai ,  Koei Kuribayashi

IPC分类号： H01L21/469

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/4412 ,  C23C16/45514 ,  C23C16/45578 ,  C23C16/54 ,  C30B25/165 ,  C30B29/36 ,  H01L21/02529

摘要： There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.

摘要翻译： 提供了一种用于在高温条件下生长SiC外延膜的衬底处理装置，半导体器件的制造方法和制造衬底的方法。 基板处理装置包括：反应室; 第一气体供给系统，其配置为至少供给含有硅原子的气体和含有氯原子的气体，或者含有硅和氯原子的气体; 构造成供给至少一种还原气体的第二气体供给系统; 第三气体供给系统，被配置为至少提供含有碳原子的气体; 连接到第一气体供应系统或第一和第三气体供应系统的第一气体供应喷嘴; 连接到第二气体供应系统或第二和第三气体供应系统的第二气体供应喷嘴; 以及控制器，被配置为控制第一至第三气体供应系统。

公开(公告)号：US08409352B2

公开(公告)日：2013-04-02

申请号：US13036330

申请日：2011-02-28

申请人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

发明人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

IPC分类号： C23C16/00 ,  C23C16/455

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/45578 ,  H01L21/02529 ,  H01L21/67109

摘要： An apparatus including a reaction chamber in which substrates are stacked; a first gas supply nozzle installed in a region in which the substrates are stacked; a second gas supply nozzle installed in a different position; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the substrates, a line of which is branched in a direction of the second gas supply nozzle, and including a first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the substrates, a line of which is branched in a direction of the first gas supply nozzle, and including a second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the substrates are stacked.

摘要翻译： 一种装置，包括堆叠基板的反应室; 安装在基板堆叠的区域中的第一气体供给喷嘴; 安装在不同位置的第二气体供给喷嘴; 第一分支喷嘴，其在与所述基板的主表面平行的方向上安装在所述第一气体供给喷嘴处，所述第一分支喷嘴的管线沿所述第二气体供给喷嘴的方向分支，并且包括第一气体供给口; 以及第二分支喷嘴，其沿着与所述基板的主表面平行的方向安装在所述第二气体供给喷嘴上，所述第二分支喷嘴的管线沿所述第一气体供给喷嘴的方向分支，并且包括第二气体供给口; 其中所述第一气体供给口和所述第二气体供给口沿着所述基板堆叠的方向彼此相邻地安装。

公开(公告)号：US20110212599A1

公开(公告)日：2011-09-01

申请号：US13036330

申请日：2011-02-28

申请人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

发明人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/45578 ,  H01L21/02529 ,  H01L21/67109

摘要： Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, and including at least one second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the plurality of substrates are stacked, the method including the steps of: loading the plurality of substrates into the reaction chamber; and forming SiC films by supplying at least a silicon-containing gas and a chlorine-containing gas or a silicon/chlorine-containing gas through the first gas supply port and supplying at least a carbon-containing gas and a reduction gas through the second gas supply port.

摘要翻译： 提供一种使用基板处理设备制造半导体器件的方法，该基板处理设备包括其中多个基板以预定距离堆叠的反应室; 第一气体供给喷嘴，其安装成延伸到所述多个基板堆叠的区域; 第二气体供给喷嘴，其安装成在与堆叠所述多个基板的区域中延伸到与所述第一气体供给喷嘴的位置不同的位置; 第一分支喷嘴，其安装在所述第一气体供给喷嘴的平行于所述多个基板的主表面的方向上，所述第一分支喷嘴的至少一条线沿所述第二气体供给喷嘴的方向分支，并且包括至少一个第一气体供应 港口; 以及第二分支喷嘴，其在与所述多个基板的主表面平行的方向上安装在所述第二气体供给喷嘴处，所述第二分支喷嘴的至少一条线沿所述第一气体供给喷嘴的方向分支，并且包括至少一个第二喷嘴 供气口; 其特征在于，所述第一气体供给口和所述第二气体供给口沿所述多个基板层叠的方向彼此相邻地安装，所述方法包括以下步骤：将所述多个基板装载到所述反应室中; 以及通过经由所述第一气体供给口至少供给含硅气体和含氯气体或含硅/氯气体而形成SiC膜，并且通过所述第二气体供给至少含碳气体和还原气体 供应口。

公开(公告)号：US08889533B2

公开(公告)日：2014-11-18

申请号：US13580933

申请日：2011-02-22

申请人： Takafumi Sasaki ,  Yoshinori Imai ,  Koei Kuribayashi ,  Sadao Nakashima

发明人： Takafumi Sasaki ,  Yoshinori Imai ,  Koei Kuribayashi ,  Sadao Nakashima

IPC分类号： H01L21/20 ,  H01L21/36 ,  C23C16/455 ,  C23C16/32 ,  H01L21/02

CPC分类号： C23C16/45578 ,  C23C16/325 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S438/931

摘要： A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.

摘要翻译： 通过使用基板处理装置制造半导体器件的方法包括：反应室，被配置为处理以预定间隔堆叠的多个基板，其中来自第一气体供应入口的第一气体流和来自第二气体供应源的第二气体流 入口在这些气体流到达基板之前彼此交叉。 制造半导体器件的方法包括：将多个衬底装载到反应室中; 将来自所述第一气体供给口的含硅气体和含氯气体供给到所述反应室中，将来自所述第二气体供给口的含碳气体和还原气体供给到所述反应室内，并供给含掺杂剂的气体 从第一供气口或第二供气口进入反应室; 并从反应室中卸载基板。

公开(公告)号：US20120315767A1

公开(公告)日：2012-12-13

申请号：US13580933

申请日：2011-02-22

申请人： Takafumi Sasaki ,  Yoshinori Imai ,  Koei Kuribayashi ,  Sadao Nakashima

发明人： Takafumi Sasaki ,  Yoshinori Imai ,  Koei Kuribayashi ,  Sadao Nakashima

IPC分类号： H01L21/31 ,  C23C16/32

CPC分类号： C23C16/45578 ,  C23C16/325 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S438/931

摘要： A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.

摘要翻译： 通过使用基板处理装置制造半导体器件的方法包括：反应室，被配置为处理以预定间隔堆叠的多个基板，其中来自第一气体供应入口的第一气体流和来自第二气体供应源的第二气体流 入口在这些气体流到达基板之前彼此交叉。 制造半导体器件的方法包括：将多个衬底装载到反应室中; 将来自所述第一气体供给口的含硅气体和含氯气体供给到所述反应室中，将来自所述第二气体供给口的含碳气体和还原气体供给到所述反应室内，并供给含掺杂剂的气体 从第一供气口或第二供气口进入反应室; 并从反应室中卸载基板。

公开(公告)号：US20120156886A1

公开(公告)日：2012-06-21

申请号：US13331123

申请日：2011-12-20

申请人： Kenji Shirako ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yoshinori Imai ,  Daisuke Hara ,  Shuhei Saido ,  Koei Kuribayashi

发明人： Kenji Shirako ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yoshinori Imai ,  Daisuke Hara ,  Shuhei Saido ,  Koei Kuribayashi

IPC分类号： H01L21/306 ,  C01B31/36 ,  C23F1/08

CPC分类号： C23C16/325 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262

摘要： Production efficiency of a substrate (in particular, a substrate on which a SiC epitaxial film is formed) is improved and formation of the film inside a gas supply port is suppressed. This is accomplished by a substrate processing apparatus including a reaction chamber configured to accommodate a plurality of substrates 14, a heating part installed to surround the reaction chamber and configured to heat the reaction chamber, and a first gas supply pipe 60 extending in the reaction chamber, wherein the first gas supply pipe 60 includes a first gas supply port 68 configured to inject a first gas toward the plurality of substrates 14, and first shielding walls installed at both sides of the first gas supply port to expose the first gas supply port 68, the first shielding walls extending toward the plurality of substrates 14 from the first gas supply port 68.

摘要翻译： 改善了基板（特别是其上形成有SiC外延膜的基板）的生产效率，并抑制了气体供给口内的膜的形成。 这是通过一种基板处理装置实现的，该基板处理装置包括：反应室，其构造成容纳多个基板14，加热部分安装成围绕反应室并构造成加热反应室;以及第一气体供给管60，其在反应室 其特征在于，所述第一气体供给管60包括：第一气体供给口68，其配置成朝向所述多个基板14喷射第一气体;以及第一遮蔽壁，设置在所述第一气体供给口的两侧，露出所述第一气体供给口68 第一屏蔽壁从第一气体供给口68向多个基板14延伸。

公开(公告)号：US08868228B2

公开(公告)日：2014-10-21

申请号：US13286443

申请日：2011-11-01

申请人： Toshiaki Otsuki ,  Takafumi Sasaki

发明人： Toshiaki Otsuki ,  Takafumi Sasaki

IPC分类号： G06F19/00 ,  G05B19/416 ,  G05B19/41

CPC分类号： G05B19/41 ,  G05B19/416

摘要： When a numerical controller executes a tool-center-point control in which a path of a tool center point with respect to a workpiece is instructed, and the workpiece is machined along the instructed path based on a speed instruction, the numerical controller sets the speed instruction so that the speed instruction is a synthesis speed with respect to a synthesis distance of a relative moving distance between the workpiece and a tool center point and a tool-direction changing distance due to a relative change in a tool direction with respect to the workpiece by a rotary axis. The numerical controller interpolates a position of a linear axis and a position of a rotary axis by the tool-center-point control according to the synthesis speed and drives the linear axis and the rotary axis to the position of the linear axis and the position of the rotary axis created by the interpolation.

摘要翻译： 当数字控制器执行其中指示了工具中心点的路径相对于工件的工具中心点控制，并且基于速度指令沿着指示路径加工工件时，数字控制器设定速度 指令，使得速度指令是相对于工件与刀具中心点之间的相对移动距离的合成距离和由于刀具方向相对于工件的相对变化而产生的刀具方向变化距离的合成速度 通过旋转轴。 数值控制器根据合成速度通过刀具中心点控制来插入线性轴的位置和旋转轴的位置，并将线性轴和旋转轴驱动到直线轴的位置和位置 由内插产生的旋转轴。

公开(公告)号：US20120220108A1

公开(公告)日：2012-08-30

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  H01L21/306 ,  C23C16/455

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20120220107A1

公开(公告)日：2012-08-30

申请号：US13405638

申请日：2012-02-27

申请人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

发明人： Masanao Fukuda ,  Takafumi Sasaki ,  Takatomo Yamaguchi ,  Daisuke Hara

IPC分类号： H01L21/20 ,  B65D85/00 ,  C30B25/12

CPC分类号： H01L21/67757 ,  H01L21/67309

摘要： Provided is a substrate processing apparatus having a stack structure of wafers that can endure a high temperature without bad influence on film-forming precision. The stack structure includes a holder base (110) configured to hold a wafer (14) at an inner circumference side thereof, and boat columns (31a to 31c) each including a holder retainer (HS) configured to hold an outer circumference side of the holder base (110), wherein an outer diameter of the holder base (110) is larger than that of the wafer (14), and the holder base (110) is detachable from the holder retainers (HS).

摘要翻译： 提供一种具有可承受高温而不影响成膜精度的晶片的堆叠结构的基板处理装置。 所述堆叠结构包括构造成在其内周侧保持晶片（14）的保持器基座（110）和每个包括保持器保持器（HS）的船柱（31a至31c），所述保持器保持器（HS）构造成保持所述 保持器基座（110），其中保持器基座（110）的外径大于晶片（14）的外径，并且保持器基座（110）可从保持器保持器（HS）拆卸。

公开(公告)号：US08041447B2

公开(公告)日：2011-10-18

申请号：US12192590

申请日：2008-08-15

申请人： Toshiaki Otsuki ,  Soichiro Ide ,  Takafumi Sasaki

发明人： Toshiaki Otsuki ,  Soichiro Ide ,  Takafumi Sasaki

IPC分类号： G05B13/02 ,  G05B19/25 ,  G05B19/41 ,  G06F19/00

CPC分类号： G05B19/4086 ,  G05B2219/35557 ,  G05B2219/50049

摘要： A numerical controller controlling a 5-axis machine tool compensates setting error that arises when a workpiece is set on the table. Error in the three linear axes and the two rotation axes are compensated using preset error amounts to keep the calculated tool position and tool direction in a command coordinate system. If a trigonometric function used for error compensation has a plurality of solution sets, the solution set closest to the tool direction in the command coordinate system is selected from the plurality of solution sets and used as the positions of the two rotation axes compensated in the above error compensation.

摘要翻译： 控制5轴机床的数字控制器可以补偿工件设置在工作台上时产生的设定误差。 三个直线轴的误差和两个旋转轴的补偿使用预设的误差量，以将计算出的刀具位置和刀具方向保持在命令坐标系中。 如果用于误差补偿的三角函数具有多个解集，则从多个解集合中选择最靠近命令坐标系中的刀具方向的解，并将其用作在上述中补偿的两个旋转轴的位置 误差补偿。