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公开(公告)号：US20120220140A1
公开(公告)日：2012-08-30
申请号：US13505721
申请日：2010-10-14
IPC分类号： H01L21/268 , B23K26/06
CPC分类号： C30B1/023 , C30B13/22 , C30B29/06 , G03F1/14 , H01L21/02532 , H01L21/02595 , H01L21/0268 , H01L21/268 , H01L27/1285
摘要： Provided is a forming device and method making it possible to obtain a low-temperature polysilicon film in which the size of crystal grains fluctuates minimally, and is uniform. A mask has laser-light-blocking areas and laser-light-transmission areas arranged in the form of a grid such that the light-blocking areas and transmission areas are not adjacent to one another. Laser light is directed by the microlenses through the masks to planned channel-area-formation areas. The laser light transmitted by the transmission areas is directed onto an a-Si:H film, annealing and polycrystallzing the irradiated parts thereof. The mask is then removed, and when the entire planned channel-area-formation area is irradiated with laser light, the already-polycrystallized area, having a higher melting point, does not melt, while the area in an amorphous state melts and solidifies, leading to polycrystallization. The grain size of the polysilicon film obtained is regulated by the light-blocking areas and transmission areas and is thus controlled to a predetermined range.
摘要翻译： 提供一种使得可以获得其中晶粒尺寸最小波动并且均匀的低温多晶硅膜的形成装置和方法。 掩模具有以栅格形式布置的激光阻挡区域和激光传输区域，使得遮光区域和透射区域彼此不相邻。 激光由微透镜通过面罩导向计划的通道区形成区域。 由透射区域透射的激光被引导到a-Si：H膜上，对其照射部分进行退火和多晶化。 然后去除掩模，并且当用激光照射整个规划的通道区域形成区域时，具有较高熔点的已经多晶化区域不会熔化，而处于非晶态的区域熔化并固化， 导致多结晶。 获得的多晶硅膜的晶粒尺寸由遮光区域和透射区域调节，因此被控制在预定范围。
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公开(公告)号：US08748326B2
公开(公告)日：2014-06-10
申请号：US13505721
申请日：2010-10-14
CPC分类号： C30B1/023 , C30B13/22 , C30B29/06 , G03F1/14 , H01L21/02532 , H01L21/02595 , H01L21/0268 , H01L21/268 , H01L27/1285
摘要： Provided is a forming device and method making it possible to obtain a low-temperature polysilicon film in which the size of crystal grains fluctuates minimally, and is uniform. A mask has laser-light-blocking areas and laser-light-transmission areas arranged in the form of a grid such that the light-blocking areas and transmission areas are not adjacent to one another. Laser light is directed by the microlenses through the masks to planned channel-area-formation areas. The laser light transmitted by the transmission areas is directed onto an a-Si:H film, annealing and polycrystallizing the irradiated parts thereof. The mask is then removed, and when the entire planned channel-area-formation area is irradiated with laser light, the already-polycrystallized area, having a higher melting point, does not melt, while the area in an amorphous state melts and solidifies, leading to polycrystallization. The grain size of the polysilicon film obtained is regulated by the light-blocking areas and transmission areas and is thus controlled to a predetermined range.
摘要翻译： 提供一种使得可以获得其中晶粒尺寸最小波动并且均匀的低温多晶硅膜的形成装置和方法。 掩模具有以栅格形式布置的激光阻挡区域和激光传输区域，使得遮光区域和透射区域彼此不相邻。 激光由微透镜通过面罩导向计划的通道区形成区域。 由透射区域透射的激光被引导到a-Si：H膜上，对其照射部分进行退火和多晶化。 然后去除掩模，并且当用激光照射整个规划的通道区域形成区域时，具有较高熔点的已经多晶化区域不会熔化，而处于非晶态的区域熔化并固化， 导致多结晶。 获得的多晶硅膜的晶粒尺寸由遮光区域和透射区域调节，因此被控制在预定范围。
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公开(公告)号：US4298962A
公开(公告)日：1981-11-03
申请号：US115323
申请日：1980-01-25
申请人： Kuniyuki Hamano , Toshiyuki Ohta
发明人： Kuniyuki Hamano , Toshiyuki Ohta
IPC分类号： G11C11/35 , H01L27/108 , H01L29/78 , G11C11/40
CPC分类号： H01L27/108 , G11C11/35 , H01L29/78
摘要： A high-density of semiconductor device is disclosed, which comprises a semiconductor substrate of a first conductivity type, first and second semiconductor regions of a second conductivity provided in the semiconductor substrate, the first and second semiconductor regions defining a channel region therebetween at the surface of the substrate, an insulator film disposed on the channel region, a conductive layer formed on the insulator film, means for producing depletion layers from the first and second semiconductor regions in such a manner that the depletion layers contact with each other to isolate the channel region from the substrate, means for selectively feeding majority carriers of the substrate to the channel region at a density higher than that of the substrate, and a means for detecting the existence of the accumulation of the majority carriers in the channel region.
摘要翻译： 公开了一种高密度半导体器件，其包括第一导电类型的半导体衬底，设置在半导体衬底中的第二导电体的第一和第二半导体区域，第一和第二半导体区域在其表面处限定沟道区域 设置在沟道区上的绝缘膜，形成在绝缘膜上的导电层，用于从第一和第二半导体区产生耗尽层的装置，使得耗尽层相互接触以隔离沟道 区域，用于以比所述衬底高的密度选择性地将所述衬底的多数载流子选择性地馈送到所述沟道区的装置，以及用于检测所述沟道区中多数载流子的积聚的存在的装置。
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4.发明授权Semiconductor device having multilayered wiring structure with a small parasitic capacitance 失效具有小平铺电容的多层布线结构的半导体器件
公开(公告)号：US5103288A
公开(公告)日：1992-04-07
申请号：US677619
申请日：1991-03-27
申请人： Mitsuru Sakamoto , Kuniyuki Hamano
发明人： Mitsuru Sakamoto , Kuniyuki Hamano
IPC分类号： H01L21/31 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H05K1/00
CPC分类号： H01L23/53295 , H01L21/02126 , H01L21/02203 , H01L21/02304 , H01L21/02343 , H01L21/31695 , H01L21/7682 , H01L23/5226 , H01L23/5329 , H01L2924/0002 , H05K3/4676
摘要： The semiconductor device of the present invention includes a semiconductor substrate on which are formed semiconductor elements, and a plurality of wiring layers formed on the semiconductor substrate via porous insulating films. The surface of the plurality of the wiring layers is preferably covered with a compact insulating film. The size of the pores in the porous insulating film is preferably 5 nm to 50 nm in diameter, and the volume of the pores in the porous insulating film is preferably 50% to 80% of the total volume of the porous insulating film. The porous insulating film is formed by subjecting a mixed insulating film of a basic oxide and an acidic oxide to a heat treatment to precipitate only either one of the basic oxide and the acidic oxide, and then dissolving out selectively the basic or acidic oxide precipitated.
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