-
公开(公告)号：US08748326B2
公开(公告)日：2014-06-10
申请号：US13505721
申请日：2010-10-14
CPC分类号： C30B1/023 , C30B13/22 , C30B29/06 , G03F1/14 , H01L21/02532 , H01L21/02595 , H01L21/0268 , H01L21/268 , H01L27/1285
摘要： Provided is a forming device and method making it possible to obtain a low-temperature polysilicon film in which the size of crystal grains fluctuates minimally, and is uniform. A mask has laser-light-blocking areas and laser-light-transmission areas arranged in the form of a grid such that the light-blocking areas and transmission areas are not adjacent to one another. Laser light is directed by the microlenses through the masks to planned channel-area-formation areas. The laser light transmitted by the transmission areas is directed onto an a-Si:H film, annealing and polycrystallizing the irradiated parts thereof. The mask is then removed, and when the entire planned channel-area-formation area is irradiated with laser light, the already-polycrystallized area, having a higher melting point, does not melt, while the area in an amorphous state melts and solidifies, leading to polycrystallization. The grain size of the polysilicon film obtained is regulated by the light-blocking areas and transmission areas and is thus controlled to a predetermined range.
摘要翻译： 提供一种使得可以获得其中晶粒尺寸最小波动并且均匀的低温多晶硅膜的形成装置和方法。 掩模具有以栅格形式布置的激光阻挡区域和激光传输区域，使得遮光区域和透射区域彼此不相邻。 激光由微透镜通过面罩导向计划的通道区形成区域。 由透射区域透射的激光被引导到a-Si：H膜上，对其照射部分进行退火和多晶化。 然后去除掩模，并且当用激光照射整个规划的通道区域形成区域时，具有较高熔点的已经多晶化区域不会熔化，而处于非晶态的区域熔化并固化， 导致多结晶。 获得的多晶硅膜的晶粒尺寸由遮光区域和透射区域调节，因此被控制在预定范围。
-
公开(公告)号：US20120220140A1
公开(公告)日：2012-08-30
申请号：US13505721
申请日：2010-10-14
IPC分类号： H01L21/268 , B23K26/06
CPC分类号： C30B1/023 , C30B13/22 , C30B29/06 , G03F1/14 , H01L21/02532 , H01L21/02595 , H01L21/0268 , H01L21/268 , H01L27/1285
摘要： Provided is a forming device and method making it possible to obtain a low-temperature polysilicon film in which the size of crystal grains fluctuates minimally, and is uniform. A mask has laser-light-blocking areas and laser-light-transmission areas arranged in the form of a grid such that the light-blocking areas and transmission areas are not adjacent to one another. Laser light is directed by the microlenses through the masks to planned channel-area-formation areas. The laser light transmitted by the transmission areas is directed onto an a-Si:H film, annealing and polycrystallzing the irradiated parts thereof. The mask is then removed, and when the entire planned channel-area-formation area is irradiated with laser light, the already-polycrystallized area, having a higher melting point, does not melt, while the area in an amorphous state melts and solidifies, leading to polycrystallization. The grain size of the polysilicon film obtained is regulated by the light-blocking areas and transmission areas and is thus controlled to a predetermined range.
摘要翻译： 提供一种使得可以获得其中晶粒尺寸最小波动并且均匀的低温多晶硅膜的形成装置和方法。 掩模具有以栅格形式布置的激光阻挡区域和激光传输区域，使得遮光区域和透射区域彼此不相邻。 激光由微透镜通过面罩导向计划的通道区形成区域。 由透射区域透射的激光被引导到a-Si：H膜上，对其照射部分进行退火和多晶化。 然后去除掩模，并且当用激光照射整个规划的通道区域形成区域时，具有较高熔点的已经多晶化区域不会熔化，而处于非晶态的区域熔化并固化， 导致多结晶。 获得的多晶硅膜的晶粒尺寸由遮光区域和透射区域调节，因此被控制在预定范围。
-
公开(公告)号：US20110244379A1
公开(公告)日：2011-10-06
申请号：US13160967
申请日：2011-06-15
CPC分类号： G02F1/133516 , G02F1/13394 , G02F2001/13396 , G03F7/203 , G03F7/70283
摘要： The present invention is a photomask 3 for exposing a substrate coated with a positive photosensitive material. At least a first mask pattern group 16 and a second mask pattern group 17 are formed on a transparent substrate at a predetermined arrangement pitch. The first mask pattern group 16 has first light shielding patterns 20 arranged at an interval corresponding to two types of convex pattern forming portions of different heights on the substrate, in which the first light shielding patterns 20 each have a substantially same area as a cross sectional area of a convex pattern. The second mask pattern group 17 has a second light shielding pattern 22 and an opening pattern 23, in which the second light shielding pattern 22 has a predetermined area and corresponds to a higher convex pattern forming portion among the two types of convex pattern forming portions, and the opening pattern corresponds to a lower convex pattern forming portion. This enables top parts of a plurality of types of convex patterns of different heights to be shaped substantially hemispherical.
摘要翻译： 本发明是一种光掩模3，用于暴露涂有正性感光材料的基材。 至少第一掩模图案组16和第二掩模图案组17以预定排列间距形成在透明基板上。 第一掩模图案组16具有以对应于基板上不同高度的两种类型的凸起图案形成部分的间隔布置的第一遮光图案20，其中第一遮光图案20各自具有与截面大致相同的面积 凸形图案的区域。 第二掩模图案组17具有第二遮光图案22和开口图案23，其中第二遮光图案22具有预定区域并且对应于两种类型的凸起图案形成部分中的较高凸起图案形成部分， 并且开口图案对应于下凸起图案形成部分。 这使得不同高度的多种类型的凸形图案的顶部部分能够基本上成半球形。
-
公开(公告)号：US20130342820A1
公开(公告)日：2013-12-26
申请号：US14001863
申请日：2012-02-02
IPC分类号： G03F7/20
CPC分类号： G03F7/70191 , G02B3/0056 , G03F7/70275 , G03F7/70358
摘要： A light-exposure device is provided with a microlens array on which is arranged with a prescribed regularity a plurality of microlenses on which exposure light transmitted through a light source and a mask is introduced to resolve an upright equal-magnification image on a substrate. Upon reaching a prescribed position, the substrate is irradiated with pulsed laser light from the light source, and the substrate is successively exposed, and after the entire area of the exposure region of the substrate is exposed, a relative positional relationship between the microlens array and the mask is successively switched in a vertical direction by an amount of a horizontal pitch of the microlenses, and a subsequent exposure is performed. Exposure with high precision and high resolution can thereby be performed with a short exposure cycle time.
摘要翻译： 曝光装置设置有微透镜阵列，其上以规定的规则排列多个微透镜，在该微透镜上引入透过光源和掩模的曝光光，以解析基板上的直立等倍放大图像。 在达到规定位置时，用来自光源的脉冲激光对衬底进行照射，然后依次露出衬底，并且在衬底的曝光区域的整个区域暴露之后，微透镜阵列与微透镜阵列之间的相对位置关系 该掩模在垂直方向依次切换微透镜的水平间距的量，然后进行随后的曝光。 从而能够以短的曝光周期时间进行高精度，高分辨率的曝光。
-
公开(公告)号：US20150258630A1
公开(公告)日：2015-09-17
申请号：US14664696
申请日：2015-03-20
CPC分类号： B23K26/352 , B23K26/0006 , B23K26/083 , B23K26/354 , B23K2103/56 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02675 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L21/67115 , H01L21/67259 , H01L27/1285 , H01L29/66765
摘要： In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the plurality of TFT forming areas set in a matrix on the substrate, is shifted in the direction intersecting with the conveying direction of the substrate, to thereby align the lenses in the lens array with the TFT forming areas on the substrate based on the alignment reference position. The laser beams are irradiated onto the lens array when the substrate moves and the TFT forming areas reach the underneath of the corresponding lenses of the lens array, and the laser beams are focused by the plurality of lenses to anneal the amorphous silicon film in each TFT forming area.
摘要翻译： 在本发明中，至少一排透镜阵列，其中多个透镜沿着与基板的输送方向相交的方向排列，以对应于设置在基板上的矩阵中的多个TFT形成区域，是 在与基板的输送方向相交的方向上移动，从而基于对准基准位置将透镜阵列中的透镜与基板上的TFT形成区域对齐。 当基板移动并且TFT形成区域到达透镜阵列的相应透镜的下方时，激光束被照射到透镜阵列上，并且激光束被多个透镜聚焦以对每个TFT中的非晶硅膜进行退火 形成区域。
-
公开(公告)号：US09086514B2
公开(公告)日：2015-07-21
申请号：US13877653
申请日：2011-09-12
CPC分类号： G02B3/0037 , G02B3/0062 , G02B26/0875 , G03F7/70258 , G03F7/70275
摘要： A scanning exposure apparatus uses a plurality of microlens arrays to project a mask exposure pattern onto a substrate. A CCD line camera detects an image on the substrate at this time, and using a first-layer pattern on the substrate as a reference pattern, detects whether or not the mask exposure pattern matches the reference pattern. In a case in which the patterns do not match, the microlens array is tilted from a direction that is parallel to the substrate, and the mask exposure pattern is made to match the reference pattern by using the microlens array to adjust the exposure area on the substrate. When the exposure pattern deviates from the reference pattern, it is thereby possible to detect the deviation during exposure and to prevent an exposure pattern misregistration, thereby enhancing the precision of the exposure pattern in an overlay exposure.
摘要翻译： 扫描曝光装置使用多个微透镜阵列将掩模曝光图案投影到基板上。 CCD行摄像机此时检测衬底上的图像，并且使用衬底上的第一层图案作为参考图案，检测掩模曝光图案是否与参考图案匹配。 在图案不匹配的情况下，微透镜阵列从平行于衬底的方向倾斜，并且通过使用微透镜阵列使掩模曝光图案与参考图案相匹配，以调整曝光区域 基质。 当曝光图案偏离参考图案时，由此可以检测曝光期间的偏差并防止曝光图案重合，从而提高曝光图案在重叠曝光中的精度。
-
公开(公告)号：US08912079B2
公开(公告)日：2014-12-16
申请号：US13266337
申请日：2010-04-28
申请人： Motoichi Ohtsu , Takashi Yatsui , Tadashi Kawazoe , Shunsuke Yamazaki , Koichi Kajiyama , Michinobu Mizumura , Keiichi Ito
发明人： Motoichi Ohtsu , Takashi Yatsui , Tadashi Kawazoe , Shunsuke Yamazaki , Koichi Kajiyama , Michinobu Mizumura , Keiichi Ito
IPC分类号： H01L21/20 , B05C9/08 , C23C16/48 , C23C16/30 , C30B25/00 , C30B29/40 , H01L21/02 , H01L33/00 , C23C14/54 , C23C16/52
CPC分类号： C23C16/481 , C23C14/548 , C23C16/303 , C23C16/52 , C30B25/00 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L33/0062
摘要： Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substrate 13 while depositing the compound semiconductor on the substrate 13, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate 13, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.
摘要翻译： 提供一种在将化合物半导体沉积在基板上时以纳米级调节三元或更高系统的化合物半导体的发光波长的化合物半导体沉积方法。 在将三元或更高系统的化合物半导体沉积在衬底上的化合物半导体沉积方法中，将化合物半导体所需的理想激发能的能量较小的传播光照射到衬底13上，同时将化合物半导体沉积在 基板13，基于沉积在基板13上的化合物半导体的微粒的照射的传播光产生近场光，基于产生的近场光，以多个阶段形成化合物半导体的新的振动电平，以及 对应于激发能的化合物半导体中的成分被传播光激发，通过振动水平，激发能量等于或小于传播光的能量的新的振动水平被激发，从而解吸部件 。
-
公开(公告)号：US20130188161A1
公开(公告)日：2013-07-25
申请号：US13877653
申请日：2011-09-12
IPC分类号： G02B3/00
CPC分类号： G02B3/0037 , G02B3/0062 , G02B26/0875 , G03F7/70258 , G03F7/70275
摘要： A scanning exposure apparatus uses a plurality of microlens arrays to project a mask exposure pattern onto a substrate. A CCD line camera detects an image on the substrate at this time, and using a first-layer pattern on the substrate as a reference pattern, detects whether or not the mask exposure pattern matches the reference pattern. In a case in which the patterns do not match, the microlens array is tilted from a direction that is parallel to the substrate, and the mask exposure pattern is made to match the reference pattern by using the microlens array to adjust the exposure area on the substrate. When the exposure pattern deviates from the reference pattern, it is thereby possible to detect the deviation during exposure and to prevent an exposure pattern misregistration, thereby enhancing the precision of the exposure pattern in an overlay exposure.
摘要翻译： 扫描曝光装置使用多个微透镜阵列将掩模曝光图案投影到基板上。 CCD行摄像机此时检测衬底上的图像，并且使用衬底上的第一层图案作为参考图案，检测掩模曝光图案是否与参考图案匹配。 在图案不匹配的情况下，微透镜阵列从平行于衬底的方向倾斜，并且通过使用微透镜阵列使掩模曝光图案与参考图案相匹配，以调整曝光区域 基质。 当曝光图案偏离参考图案时，由此可以检测曝光期间的偏差并防止曝光图案重合，从而提高曝光图案在重叠曝光中的精度。
-
公开(公告)号：US08488097B2
公开(公告)日：2013-07-16
申请号：US12899652
申请日：2010-10-07
IPC分类号： G02F1/1337
CPC分类号： G02F1/133788
摘要： One aspect of the invention provides a liquid crystal display device producing method for irradiating a liquid crystal display substrate, in which plural pixels are formed in a matrix state and liquid crystal is sealed between a TFT substrate and a counter electrode substrate, with light having a predetermined wavelength to orient liquid crystal molecules toward a predetermined direction in a state in which an electric field is applied to each pixel of the liquid crystal display substrate. The method includes the steps of: dipping the liquid crystal display substrate and a lamp in a transparent liquid having resistivity of a predetermined value or more and sufficiently high transmittance to the light in a state in which the liquid crystal display substrate and the lamp face each other; and lighting the lamp to irradiate the liquid crystal display substrate with the light having a predetermined light quantity in a state in which the electric field is applied to each pixel.
摘要翻译： 本发明的一个方面提供了一种用于照射液晶显示基板的液晶显示装置的制造方法，其中以矩阵状形成多个像素并将液晶密封在TFT基板和对电极基板之间， 在向液晶显示基板的每个像素施加电场的状态下将液晶分子朝向预定方向取向的预定波长。 该方法包括以下步骤：在液晶显示基板和灯各自面对的状态下，将液晶显示基板和灯浸入到具有预定值或更大的电阻率和足够高透射率的透明液体中 其他; 并且在对每个像素施加电场的状态下点亮灯以照射具有预定光量的光的液晶显示基板。
-
公开(公告)号：US08293434B2
公开(公告)日：2012-10-23
申请号：US13160967
申请日：2011-06-15
CPC分类号： G02F1/133516 , G02F1/13394 , G02F2001/13396 , G03F7/203 , G03F7/70283
摘要： The present invention is a photomask 3 for exposing a substrate coated with a positive photosensitive material. At least a first mask pattern group 16 and a second mask pattern group 17 are formed on a transparent substrate at a predetermined arrangement pitch. The first mask pattern group 16 has first light shielding patterns 20 arranged at an interval corresponding to two types of convex pattern forming portions of different heights on the substrate, in which the first light shielding patterns 20 each have a substantially same area as a cross sectional area of a convex pattern. The second mask pattern group 17 has a second light shielding pattern 22 and an opening pattern 23, in which the second light shielding pattern 22 has a predetermined area and corresponds to a higher convex pattern forming portion among the two types of convex pattern forming portions, and the opening pattern corresponds to a lower convex pattern forming portion. This enables top parts of a plurality of types of convex patterns of different heights to be shaped substantially hemispherical.
摘要翻译： 本发明是一种光掩模3，用于暴露涂有正性感光材料的基材。 至少第一掩模图案组16和第二掩模图案组17以预定排列间距形成在透明基板上。 第一掩模图案组16具有以对应于基板上不同高度的两种类型的凸起图案形成部分的间隔布置的第一遮光图案20，其中第一遮光图案20各自具有与截面大致相同的面积 凸形图案的区域。 第二掩模图案组17具有第二遮光图案22和开口图案23，其中第二遮光图案22具有预定区域并且对应于两种类型的凸起图案形成部分中的较高凸起图案形成部分， 并且开口图案对应于下凸起图案形成部分。 这使得不同高度的多种类型的凸形图案的顶部部分能够基本上成半球形。
-
-
-
-
-
-
-
-
-
搜索结果
51 条记录 (耗时 0.017 秒)