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1.发明申请NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT 有权非易失性存储元件，其制造方法和使用非易失性存储元件的非易失性半导体器件公开(公告)号：US20110294259A1
公开(公告)日：2011-12-01
申请号：US13205408
申请日：2011-08-08
Applicant: Yoshihiko KANZAWA , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
Inventor： Yoshihiko KANZAWA , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC: H01L21/36
CPC classification number: H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
Abstract: A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
Abstract translation: 非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻 电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽， 由TaOx（0
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公开(公告)号：US20090321709A1
公开(公告)日：2009-12-31
申请号：US12376256
申请日：2007-08-17
Applicant: Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
Inventor： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
CPC classification number: G11C13/0007 , G11C11/5685 , G11C2213/31 , G11C2213/32 , G11C2213/55 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/1683
Abstract: A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.
Abstract translation: 存储元件包括第一电极，第二电极和电阻可变膜2，电阻可变膜2设置在与第一和第二电极连接的第一和第二电极之间，电阻变化膜2的电阻值基于电压变化 电阻可变膜2包括由Fe 3 O 4制成的层2a和由Fe 2 O 3制成的层2b或以MFe 2 O 4表示的尖晶石结构氧化物（M：除了Fe之外的金属元素）; 由Fe 3 O 4制成的层2a比由Fe 2 O 3或尖晶石结构氧化物制成的层2b厚。
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3.发明授权Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element 有权非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置公开(公告)号：US08445319B2
公开(公告)日：2013-05-21
申请号：US13205408
申请日：2011-08-08
Applicant: Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
Inventor： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC: H01L47/00
CPC classification number: H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
Abstract: A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
Abstract translation: 非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻 电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽， 由TaOx（0
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公开(公告)号：US07964869B2
公开(公告)日：2011-06-21
申请号：US12376256
申请日：2007-08-17
Applicant: Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
Inventor： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
IPC: H01L29/10
CPC classification number: G11C13/0007 , G11C11/5685 , G11C2213/31 , G11C2213/32 , G11C2213/55 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/1683
Abstract: A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.
Abstract translation: 存储元件包括第一电极，第二电极和电阻可变膜2，电阻可变膜2设置在与第一和第二电极连接的第一和第二电极之间，电阻变化膜2的电阻值基于电压变化 电阻可变膜2包括由Fe 3 O 4制成的层2a和由Fe 2 O 3制成的层2b或以MFe 2 O 4表示的尖晶石结构氧化物（M：除了Fe之外的金属元素）; 由Fe 3 O 4制成的层2a比由Fe 2 O 3或尖晶石结构氧化物制成的层2b厚。
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5.发明申请NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE ELEMENT ARRAY 有权非易失性存储设备，非易失性存储元件和非易失性元件阵列公开(公告)号：US20090250678A1
公开(公告)日：2009-10-08
申请号：US12302468
申请日：2008-03-27
Applicant: Koichi Osano , Satoru Fujii , Shunsaku Muraoka
Inventor： Koichi Osano , Satoru Fujii , Shunsaku Muraoka
CPC classification number: G11C13/003 , G11C13/0007 , G11C2213/32 , G11C2213/74 , G11C2213/76 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , Y10S257/904 , Y10S257/924
Abstract: A nonvolatile memory apparatus comprises a first electrode (111), a second electrode (112), a variable resistance layer (113) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes, a first terminal (103) connected to the first electrode, and a second terminal (104) connected to the second terminal. The variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0
Abstract translation: 非易失性存储装置包括第一电极（111），第二电极（112），设置在电极之间的可变电阻层（113），可变电阻层的电阻值在多个电阻状态之间可逆地变化 在施加在电极之间的电信号上，连接到第一电极的第一端子（103）和连接到第二电极的第二端子（104）。 可变电阻层至少包含氧化钽，并且当钽氧化物由TaOx表示时，其被配置为满足0
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Patent Agency Ranking
6.发明授权公开(公告)号：US08492875B2
公开(公告)日：2013-07-23
申请号：US13483808
申请日：2012-05-30
Applicant: Koichi Osano , Satoru Fujii , Shunsaku Muraoka
Inventor： Koichi Osano , Satoru Fujii , Shunsaku Muraoka
IPC: H01L29/00 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC classification number: G11C13/003 , G11C13/0007 , G11C2213/32 , G11C2213/74 , G11C2213/76 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , Y10S257/904 , Y10S257/924
Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0
Abstract translation: 非易失性存储装置包括第一电极，第二电极，可变电阻层，基于施加在电极之间的电信号在多个电阻状态之间可逆地变化的可变电阻层的电阻值。 可变电阻层至少包括氧化钽，并且当氧化钽由TaOx表示时，其被构造为满足0
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公开(公告)号：US08058636B2
公开(公告)日：2011-11-15
申请号：US12302468
申请日：2008-03-27
Applicant: Koichi Osano , Satoru Fujii , Shunsaku Muraoka
Inventor： Koichi Osano , Satoru Fujii , Shunsaku Muraoka
CPC classification number: G11C13/003 , G11C13/0007 , G11C2213/32 , G11C2213/74 , G11C2213/76 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , Y10S257/904 , Y10S257/924
Abstract: A nonvolatile memory apparatus includes a first electrode (111), a second electrode (112), a variable resistance layer (113) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes, a first terminal (103) connected to the first electrode, and a second terminal (104) connected to the second terminal. The variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0
Abstract translation: 非易失性存储装置包括第一电极（111），第二电极（112），设置在电极之间的可变电阻层（113），可变电阻层的电阻值在多个电阻状态之间可逆地变化 在施加在电极之间的电信号上，连接到第一电极的第一端子（103）和连接到第二电极的第二端子（104）。 可变电阻层至少包含氧化钽，并且当钽氧化物由TaOx表示时，其被配置为满足0
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8.发明授权Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus 有权电阻可变元件，非易失性开关元件和电阻变量存储装置公开(公告)号：US07948789B2
公开(公告)日：2011-05-24
申请号：US12304075
申请日：2008-03-27
Applicant: Shunsaku Muraoka , Koichi Osano , Satoru Fujii
Inventor： Shunsaku Muraoka , Koichi Osano , Satoru Fujii
IPC: G11C11/00
CPC classification number: G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2013/0092 , G11C2213/32 , G11C2213/72 , H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625
Abstract: A resistance variable element comprises a first electrode (2), a second electrode (4), and a resistance variable layer (3) which is disposed between the first electrode and the second electrode, and electrically connected to the first electrode and the second electrode, wherein the resistance variable layer comprises material including TaOX (1.6≦X≦2.2), an electric resistance between the first electrode and the second electrode is lowered by application of a first voltage pulse having a first voltage between the first electrode and the second electrode, and the electric resistance between the first electrode and the second electrode is increased by application of a second voltage pulse having a second voltage of the same polarity as the first voltage, between the first electrode and the second electrode.
Abstract translation: 电阻可变元件包括设置在第一电极和第二电极之间的第一电极（2），第二电极（4）和电阻变化层（3），并且电连接到第一电极和第二电极 ，其中所述电阻变化层包括包括TaOX（1.6＆amp; Xln; 2.2）的材料，通过在所述第一电极和所述第二电极之间施加具有第一电压的第一电压脉冲来降低所述第一电极和所述第二电极之间的电阻 并且通过在第一电极和第二电极之间施加具有与第一电压相同极性的第二电压的第二电压脉冲来增加第一电极和第二电极之间的电阻。
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9.发明申请NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT 有权非易失性存储元件，其制造方法和使用非易失性存储元件的非易失性半导体器件公开(公告)号：US20090283736A1
公开(公告)日：2009-11-19
申请号：US12307211
申请日：2008-03-26
Applicant: Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhlko Shimakawa
Inventor： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhlko Shimakawa
CPC classification number: H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
Abstract: A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
Abstract translation: 非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻 电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽， 由TaOx（0
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10.发明授权公开(公告)号：US08217489B2
公开(公告)日：2012-07-10
申请号：US13246483
申请日：2011-09-27
Applicant: Koichi Osano , Satoru Fujii , Shunsaku Muraoka
Inventor： Koichi Osano , Satoru Fujii , Shunsaku Muraoka
IPC: H01L29/00
CPC classification number: G11C13/003 , G11C13/0007 , G11C2213/32 , G11C2213/74 , G11C2213/76 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , Y10S257/904 , Y10S257/924
Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0
Abstract translation: 非易失性存储装置包括第一电极，第二电极，可变电阻层，基于施加在电极之间的电信号在多个电阻状态之间可逆地变化的可变电阻层的电阻值。 可变电阻层至少包括氧化钽，并且当氧化钽由TaOx表示时，其被构造为满足0
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