Apparatus for vapor deposition
    4.
    发明授权
    Apparatus for vapor deposition 失效
    气相沉积装置

    公开(公告)号:US5223305A

    公开(公告)日:1993-06-29

    申请号:US698797

    申请日:1991-05-13

    CPC分类号: C23C16/46 C23C16/455

    摘要: An apparatus for vapor deposition including a vapor deposition section to which at least one semiconductor material supply passage and at least one alkoxide material supply passage are connected, first heating means provided for the vapor deposition section and capable of maintaining the temperature thereof higher than that of the alkoxide supply passage, second heating means provided for the semiconductor material supply passage and capable of maintaining the temperature thereof higher than that of the vapor deposition section, and third heating means provided for the alkoxide material supply passage and capable of maintaining the temperature thereof constant, and a process for continuously forming a multilayered film on a substrate.

    摘要翻译: 一种用于气相沉积的装置,包括连接至少一个半导体材料供应通道和至少一个醇盐材料供应通道的气相沉积部分,为蒸镀部设置的第一加热装置,并且能够将其温度保持在高于 所述醇盐供给路径,为半导体材料供给路设置的第二加热单元,其温度保持为高于蒸镀部的温度;以及第三加热单元,设置在所述醇盐材料供给路径上,能够保持其温度恒定 ,以及在基板上连续形成多层膜的工序。

    Electroluminescent device
    6.
    发明授权
    Electroluminescent device 失效
    电致发光器件

    公开(公告)号:US5087531A

    公开(公告)日:1992-02-11

    申请号:US442634

    申请日:1989-11-29

    摘要: Disclosed is an electroluminescent device including a substrate and an electroluminescent film on the substrate wherein the electroluminescent film is composed of a II-VI group compound semiconductor matrix and an electroluminescent center element; the improvement being present in that the electroluminescent film has a crystal structure of a hexagonal system, and contains the electroluminescent center element in a concentration (Ci) of 0.5 to 4 at. % within a thickness of 0.2 micrometer from the side of the substrate and in a concentration (Cr) of 0.15 to 0.7 at. % at the residual portion, and Ci is larger than Cr, and the process for preparing the same.

    摘要翻译: 公开了一种电致发光器件,其在衬底上包括衬底和电致发光膜,其中电致发光膜由II-VI族化合物半导体衬底和电致发光中心元件构成; 存在的改进在于电致发光膜具有六方晶系的晶体结构,并且含有浓度(Ci)为0.5-4atm的电致发光中心元件。 的厚度为0.2微米,并且浓度(Cr)为0.15〜0.7at。 %,并且C 1大于Cr,以及其制备方法。