公开(公告)号：US07910916B2

公开(公告)日：2011-03-22

申请号：US12480513

申请日：2009-06-08

申请人： Koichiro Niira ,  Hirofumi Senta ,  Hideki Hakuma

发明人： Koichiro Niira ,  Hirofumi Senta ,  Hideki Hakuma

IPC分类号： H01L31/00

CPC分类号： H01L31/022408 ,  H01L31/022425 ,  H01L31/076 ,  H01L31/1055 ,  Y02E10/548

摘要： In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductor 3a and the electrode 2. The existence of the n-type semiconductor 6 allows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductor 3a and the n-type semiconductor 6 in a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.

摘要翻译： 在光电转换装置中，在p型半导体3a和电极2之间的接触中，在p型半导体3a和p型半导体3a之间设置与p型半导体的导电类型相反的n型半导体6， 电极2.n型半导体6的存在允许有效地减少由入射光激发的光生载流子的复合速率，并且可以有效地防止产生暗电流分量。 因此，可以提高光电转换效率以及稳定特性。 此外，通过在彼此接触的区域中增加p型半导体3a和n型半导体6中的至少一个或优选两者中的掺杂元素的浓度来实现隧道结，从而保持 半导体与电极之间的欧姆特性良好。

公开(公告)号：US20050012095A1

公开(公告)日：2005-01-20

申请号：US10878488

申请日：2004-06-25

申请人： Koichiro Niira ,  Hirofumi Senta ,  Hideki Hakuma

发明人： Koichiro Niira ,  Hirofumi Senta ,  Hideki Hakuma

IPC分类号： H01L29/06 ,  H01L29/43 ,  H01L31/0224 ,  H01L31/042 ,  H01L31/076 ,  H01L31/105

CPC分类号： H01L31/022408 ,  H01L31/022425 ,  H01L31/076 ,  H01L31/1055 ,  Y02E10/548

摘要： In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductor 3a and the electrode 2. The existence of the n-type semiconductor 6 allows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductor 3a and the n-type semiconductor 6 in a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.

摘要翻译： 在光电转换装置中，在p型半导体3a和电极2之间的接触中，在p型半导体3a和p型半导体3a之间设置与p型半导体的导电类型相反的n型半导体6， 电极2.n型半导体6的存在允许有效地减少由入射光激发的光生载流子的复合速率，并且可以有效地防止产生暗电流分量。 因此，可以提高光电转换效率以及稳定特性。 此外，通过在彼此接触的区域中增加p型半导体3a和n型半导体6中的至少一个或优选两者中的掺杂元素的浓度来实现隧道结，从而保持 半导体与电极之间的欧姆特性良好。

公开(公告)号：US07560750B2

公开(公告)日：2009-07-14

申请号：US10878488

申请日：2004-06-25

申请人： Koichiro Niira ,  Hirofumi Senta ,  Hideki Hakuma

发明人： Koichiro Niira ,  Hirofumi Senta ,  Hideki Hakuma

IPC分类号： H01L29/74

CPC分类号： H01L31/022408 ,  H01L31/022425 ,  H01L31/076 ,  H01L31/1055 ,  Y02E10/548

摘要： In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductor 3a and the electrode 2. The existence of the n-type semiconductor 6 allows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductor 3a and the n-type semiconductor 6 in a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.

摘要翻译： 在光电转换装置中，在p型半导体3a和电极2之间的接触中，在p型半导体3a和p型半导体3a之间设置与p型半导体的导电类型相反的n型半导体6， 电极2.n型半导体6的存在允许有效地减少由入射光激发的光生载流子的复合速率，并且可以有效地防止产生暗电流分量。 因此，可以提高光电转换效率以及稳定特性。 此外，通过在彼此接触的区域中增加p型半导体3a和n型半导体6中的至少一个或优选两者中的掺杂元素的浓度来实现隧道结，从而保持 半导体与电极之间的欧姆特性良好。

公开(公告)号：US07001831B2

公开(公告)日：2006-02-21

申请号：US10371217

申请日：2003-02-20

申请人： Koichiro Niira ,  Hirofumi Senta ,  Hideki Hakuma ,  Hiroki Okui

发明人： Koichiro Niira ,  Hirofumi Senta ,  Hideki Hakuma ,  Hiroki Okui

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/325 ,  C23C16/345 ,  C23C16/452 ,  C23C16/50 ,  C23C16/509 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A non-Si non-C-based gas is heated by a thermal catalysis body provided in a gas introduction channel, and the heated non-Si non-C-based gas and a material-based gas comprising Si and/or C are separately introduced into a film deposition space through a showerhead having a plurality of gas effusion ports, and in the film deposition space, a plasma space is formed by a nonplanar electrode connected to a radio frequency power supply, thereby forming a film on a substrate. Formation of high-quality Si-based films and C-based films can thus be accomplished at high deposition rate over large area with uniform film thickness and homogeneous quality. Also, highly efficient devices including photoelectric conversion devices represented by solar cells can be manufactured at low-cost by the use of such films.

摘要翻译： 通过设置在气体导入通道中的热催化体来加热非Si非C基气体，并且加热的非Si非C基气体和包含Si和/或C的基于材料的气体分别 通过具有多个气体渗出口的喷头引入膜沉积空间，并且在膜沉积空间中，通过连接到射频电源的非平面电极形成等离子体空间，从而在基板上形成膜。 因此，可以在大面积上以高沉积速率实现高质量的Si基膜和C基膜的形成，具有均匀的膜厚度和均匀的质量。 此外，包括由太阳能电池代表的光电转换装置的高效率装置可以通过使用这种薄膜以低成本制造。

公开(公告)号：US20050115602A1

公开(公告)日：2005-06-02

申请号：US10892592

申请日：2004-07-15

申请人： Hirofumi Senta ,  Takeshi Kyoda ,  Kenichi Okada ,  Hisao Arimune

发明人： Hirofumi Senta ,  Takeshi Kyoda ,  Kenichi Okada ,  Hisao Arimune

IPC分类号： H01L31/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L31/035281 ,  H01L31/03845 ,  H01L31/0508 ,  Y02E10/50

摘要： A photo-electric conversion array is formed by connecting photo-electric conversion cells in series. Each photo-electric conversion cell includes: a substrate, at least one main surface of which is made of a conductor layer; plural crystalline semiconductor particles provided on the conductor surface of the substrate; an insulation layer filled in clearances among the crystalline semiconductor particles; a transparent electric conducting layer provided above the plural crystalline semiconductor particles; a collector electrode, formed on the transparent electric conducting layer, to collect electricity from the transparent electric conducting layer. The substrate is provided with a substrate electrode portion at one end portion, through which the conductor surface of the substrate is exposed, and a connection electrode is formed by extending the collector electrode, so that the connection electrode in a given photo-electric conversion cell is connected to the substrate electrode portion in another photo-electric conversion cell. It is thus possible to provide a photo-electric conversion array capable of maintaining the reliability as to the adhesion strength, with a good outward appearance as well as excellent reliability and power generation efficiency.

摘要翻译： 通过串联连接光电转换单元形成光电转换阵列。 每个光电转换单元包括：基板，其至少一个主表面由导体层制成; 设置在基板的导体表面上的多个结晶半导体颗粒; 绝缘层填充在晶体半导体颗粒之间的间隙中; 设置在所述多个结晶半导体粒子的上方的透明导电层; 形成在透明导电层上的集电极用于从透明导电层收集电力。 基板在一端部设置有基板电极部，基板的导体表面露出基板电极部，通过使集电极延伸而形成连接电极，使得在给定的光电转换元件中的连接电极 在另一个光电转换单元中连接到基板电极部分。 因此，可以提供能够保持粘合强度的可靠性，良好的外观以及优异的可靠性和发电效率的光电转换阵列。