摘要:
In an exposure unit compatible with immersion exposure, a dummy substrate to be used for an alignment process for adjustment of an exposure position for a pattern image is transferred to a substrate processing apparatus for performing a resist coating process before exposure and a development process after exposure. In the substrate processing apparatus, the received dummy substrate is reversed and transferred to a back surface cleaning unit, to be subjected to a back surface cleaning process. After that, the dummy substrate is reversed again and transferred to a front surface cleaning unit, to be subjected to a front surface cleaning process. The dummy substrate after being cleaned is transferred back from the substrate processing apparatus to the exposure unit. Since the alignment process can be performed by using a clean dummy substrate in the exposure unit, it is possible to reduce contamination of mechanisms in the exposure unit, such as a substrate stage and the like.
摘要:
A cleaning substrate for use in the cleaning operation for a substrate stage in an exposure unit compatible with immersion exposure and a dummy substrate for use during the adjustment of an exposure position of a pattern image in the exposure unit are held in a cleaning substrate housing part and a dummy substrate housing part, respectively, which are provided in a substrate processing apparatus. For the cleaning operation for the substrate stage or an alignment operation in the exposure unit, the cleaning substrate or the dummy substrate is transferred from the substrate processing apparatus to the exposure unit. A back surface cleaning process on the cleaning substrate or the dummy substrate is performed in a back surface cleaning unit of the substrate processing apparatus immediately before or immediately after the cleaning operation for the substrate stage or the alignment operation.
摘要:
An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.
摘要:
A substrate subjected to back surface cleaning by a back surface cleaning processing unit is held by a hand of an interface transport mechanism and transported to a cooling unit. The substrate whose temperature has been adjusted by the cooling unit is held by a hand of the interface transport mechanism and transported to an exposure device. The substrate subjected to exposure processing by the exposure device is held by a hand of the interface transport mechanism and transported from the exposure device to a substrate platform.
摘要:
A substrate processing method for a substrate having a photosensitive film on a top surface thereof, includes cleaning a back surface of the substrate after the formation of the photosensitive film and before exposure processing; transporting the substrate to a temperature adjuster such as a cooling unit, while holding the substrate with a first holder; adjusting a temperature of the substrate with the temperature adjuster; transporting the substrate from the temperature adjuster to the exposure device with a second holder; and transporting the substrate after the exposure processing to a first platform while holding the substrate with a third holder.
摘要:
A substrate subjected to a pattern exposure process is transported to a flash bake unit. The flash bake unit performs a post-exposure bake process in which flashes of light are directed from flash lamps onto a surface of the substrate held on an upper surface of a cooling plate to momentarily heat the surface of the substrate, thereby causing crosslinking, deprotection or decomposition and the like of resist resin to proceed by using active species produced in a resist film by a photochemical reaction during the pattern exposure process as an acid catalyst, so that the solubility of only the exposed portion of the resist film in a developing solution is locally changed. The flash heating treatment performed by the irradiation with flashes of light requires extremely short treatment time of not greater than one second. This reduces the diffusion length of acid during the post-exposure bake process.