摘要:
A method of eliminating an occurrence of concentration differences in a developer depending on position on a substrate surface when a developer on the substrate is replaced with a rinse, preventing occurrence of stain-like defects on a resist film surface, and reducing amount of the developer used is disclosed. While a substrate is being rotated about a vertical axis by a rotation motor while held in a horizontal posture by a spin chuck, after the developer has been fed onto the resist film on the substrate surface from a developer discharge nozzle to conduct processing, the substrate continues to be rotated and thus the developer on the resist film is dispersed and removed by a centrifugal force, and when an interference fringe seen on the substrate surface is reduced in level or not present, a rinse is fed onto the resist film from a rinse discharge nozzle to conduct rinsing.
摘要:
A load lock chamber includes a chamber. A vacuum pump is connected to the bottom of the chamber through a pipe. A cooling pipe is buried in the upper part of the chamber. One and the other ends of the cooling pipe are connected with a refrigerant circulator. When the pressure in the chamber is reduced, the chamber continues to be cooled during the period between when the pressure in the chamber becomes lower than a threshold and immediately before the inside of the chamber is released to atmospheric pressure.
摘要:
A puddle of developer supplied from a developer discharge nozzle is placed on a substrate held stationary. Next, the substrate is held stationary for a predetermined length of time, with the puddle of developer allowed to remain on the substrate. This causes a development reaction to proceed. Subsequently, deionized water is supplied from a deionized water discharge nozzle to the substrate to stop the development reaction, and the substrate is rotated while part of the puddle of developer is allowed to remain on the surface of the substrate. This makes a dissolution product easy to diffuse in the developer remaining on the surface of the substrate to promote the dissolution of the resist. A rinsing process and a drying process are performed to complete the development process.
摘要:
An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.
摘要:
A substrate rotates, and a liquid nozzle of a gas/liquid supply nozzle moves to a position above the center of the rotating substrate. In this state, a rinse liquid is discharged from the liquid nozzle onto the rotating substrate. The gas/liquid supply nozzle moves toward a position outside the substrate. A gas nozzle reaches the position above the center of the rotating substrate, so that the gas/liquid supply nozzle temporarily stops. With the gas/liquid supply nozzle stopping, an inert gas is discharged onto the center of the rotating substrate for a given period of time. After that, the gas/liquid supply nozzle again moves toward the position outside the substrate.
摘要:
The back surface of a substrate having a front surface coated with a resist film is irradiated with flashes of light emitted from flash lamps. Heat conduction from the back surface of the substrate abruptly raised in temperature by the irradiation with flashes of light toward the front surface thereof occurs to heat the resist film formed on the front surface of the substrate, so that a post-applied bake process is performed. After the completion of the post-applied bake process, a cooling plate cools down the substrate. Regardless of the type of resist film formed on the front surface of the substrate, the substrate has a constant absorptance of flashes of light to allow the resist film to be heated to a constant treatment temperature, because the back surface of the substrate is irradiated with flashes of light.
摘要:
A substrate (SW) is rotatably held in an approximately horizontal position by a wafer holding and rotation mechanism (810). One end of a rinsing liquid supply nozzle (840) is rotatably supported by a rinsing liquid supply nozzle rotation supporting mechanism (850) to pass over the substrate (SW). In response to rotation of the rinsing liquid supply nozzle (840), the rotation axis of the rinsing liquid supply nozzle (840) moves in a direction closer to or away from the rotation axis of the substrate (SW), whereby the amount of projection of a tip portion of the rinsing liquid supply nozzle (840) is reduced.
摘要:
A developer supply nozzle moves from a first end toward a second end of a substrate for supplying a developer to the overall main surface of the substrate. After a lapse of a required developing time, a rinse discharge nozzle moves from the first end toward the second end of the substrate for supplying a rinse to the overall main surface of the substrate. A partition plate is provided for preventing the rinse discharged from a slit discharge port of the rinse discharge nozzle onto the substrate from flowing frontward in the direction of movement of the rinse discharge nozzle or washing away the developer supplied onto the substrate frontward.
摘要:
A developer is supplied onto a substrate and thereafter a rinse discharge nozzle is moved toward an operating direction. The rinse discharge nozzle is so moved on the substrate as to continuously supply pure water onto the substrate from a slit discharge port of the rinse discharge nozzle while sucking and recovering the pure water from the surface of the substrate through a slit suction port, and a series of development is performed in a stationary state of the substrate.
摘要:
A method for developing a substrate includes spinning the substrate with a spin holder and discharging a developer to the substrate from a plurality of exhaust ports arranged in a row on a developer feeder. The method also includes causing a moving mechanism to move said developer feeder in one direction extending to a center of the substrate in plan view while maintaining a direction of arrangement of said exhaust ports in said one direction, thereby to move said developer feeder between substantially the center and an edge of the substrate. The method further includes causing the developer discharged from said exhaust ports to impinge in separate streams on the substrate, and causing each of the separate streams to impinge spirally on the substrate, thereby to develop the substrate. At least two of loci of positions of impingement of the developer corresponding to said exhaust ports overlap each other.