Abstract:
A monitoring method of metal ions or oxygen ions applicable to a high concentration non-aqueous electrolyte includes: applying a potential in a non-aqueous electrolyte to obtain current information with respect to the potential; varying the potential applied in the non-aqueous electrolyte containing metal ion concentration or oxygen ion concentration such that the metal ion concentration or the oxygen ion concentration is maintained in spite of the potential being applied; detecting a linear relationship among the concentration, the current, and passed charges in the non-aqueous electrolyte by repeatedly performing the obtaining step and the varying step, while changing the concentration; and calculating metal ion concentration or oxygen ion concentration of the non-aqueous electrolyte in pyroprocessing of the non-aqueous electrolyte by using the linear relationship. Concentration and components of a solute existing in a non-aqueous electrolyte can be measured while an electrowinning process and pyroprocessing is being conducted.
Abstract:
A method of preparing a silicon thin film, silicon thin film prepared using the method, and an electronic device including the silicon thin film are provided. The method includes applying an oxidized silicon element solution to a substrate and sintering the silicon oxide film to prepare a compact silicon oxide thin film, electrochemically reducing the silicon oxide thin film to form a porous silicon film, and re-sintering the porous silicon film. Therefore, the silicon thin film used in semiconductors, solar cells, secondary batteries and the like can be easily prepared at a low cost with a smaller number of processes than the conventional methods, and thus price competitiveness of products can be enhanced.