Selective ion sensitive electrode and method of making it
    2.
    发明授权
    Selective ion sensitive electrode and method of making it 失效
    选择性离子敏感电极及其制作方法

    公开(公告)号:US4388165A

    公开(公告)日:1983-06-14

    申请号:US298343

    申请日:1981-08-31

    IPC分类号: G01N27/333 G01N27/30

    CPC分类号: G01N27/3335 Y10T428/31663

    摘要: A selective ion sensitive electrode is so constructed that an ion exchanger sensitive to a specific ion is formed on a metal electrode, an electric conductive resin electrode or a chlorinated metal electrode to which a signal wire is connected so as to maintain a stable electric connection between the signal wire and the ion exchanger over a long period of time. A layer of a silane coupling agent is used between the electrode member and ion exchanger.

    摘要翻译: 选择性离子敏感电极被构造成使得在金属电极,导电树脂电极或连接有信号线的氯化金属电极上形成对特定离子敏感的离子交换剂,以便保持电连接 信号线和离子交换器长时间。 在电极构件和离子交换器之间使用硅烷偶联剂层。

    Semiconductor device having portions that operate at different
frequencies, and method of designing the device
    3.
    发明授权
    Semiconductor device having portions that operate at different frequencies, and method of designing the device 有权
    具有以不同频率工作的部分的半导体器件,以及设计该器件的方法

    公开(公告)号:US6078202A

    公开(公告)日:2000-06-20

    申请号:US134518

    申请日:1998-08-14

    IPC分类号: G06F1/06 G06F1/12 H03L7/00

    CPC分类号: G06F1/12 H03L7/00

    摘要: Disclosed are a semiconductor device of which a block having a plurality of portions that operate based on a plurality of clocks can be designed and inspected easily, and a method of designing the semiconductor device. First and second clocks whose frequencies are mutually different are used to generate an enabling signal that is validated only during a short period including a transition edge of the second clock. The enabling signal and first clock are supplied to the second portion. The second portion synthesizes the enabling signal and first clock to substantially generate the second clock. Thus, the second portion is regarded as a portion that operates synchronously with the first clock.

    摘要翻译: 公开了一种半导体器件,其中可以容易地设计和检查具有基于多个时钟操作的多个部分的块,以及设计半导体器件的方法。 其频率相互不同的第一和第二时钟用于产生仅在包括第二时钟的过渡沿的短周期期间被验证的使能信号。 使能信号和第一时钟被提供给第二部分。 第二部分合成使能信号和第一时钟以基本上产生第二时钟。 因此,第二部分被认为是与第一时钟同步操作的部分。

    Access limiting bus control system and method
    4.
    发明授权
    Access limiting bus control system and method 失效
    访问限制总线控制系统和方法

    公开(公告)号:US06304931B1

    公开(公告)日:2001-10-16

    申请号:US09182232

    申请日:1998-10-30

    申请人: Noriaki Ono

    发明人: Noriaki Ono

    IPC分类号: G06F1300

    CPC分类号: G06F13/368

    摘要: In a bus control system for generating a series of access requests from an access requesting unit, such as a CPU connected to a common bus including a data bus or an address bus, to a specific access request responding unit, the specific access request responding unit includes a next-address enable signal generating unit for sending a next-address enable signal which represents that a next address can be received, to the access requesting unit before data is transferred or inputted, in accordance with an address representing the access request from the access requesting unit when a read operation or a write operation is executed. Preferably, the access requesting unit includes a next-address enable signal receiving unit for receiving the next-address enable signal from the specific access request responding unit and for sending the next address to the specific access request responding unit. On the other hand, a bus control method executed by using the bus control system, having the construction described above, is disclosed.

    摘要翻译: 在用于从特定访问请求响应单元生成来自诸如连接到包括数据总线或地址总线的公共总线的访问请求单元的一系列访问请求的总线控制系统中,特定访问请求响应单元 包括下一地址使能信号生成单元,用于根据来自所述访问请求的地址来传送或输入数据之前,将表示下一地址可以被接收的下一地址使能信号发送到所述访问请求单元 执行读取操作或写入操作时的访问请求单元。 优选地,访问请求单元包括下一地址使能信号接收单元,用于从特定访问请求响应单元接收下一地址使能信号,并将下一地址发送到特定访问请求响应单元。 另一方面,公开了使用具有上述结构的总线控制系统执行的总线控制方法。

    Measuring electrode device
    5.
    发明授权
    Measuring electrode device 失效
    测量电极装置

    公开(公告)号:US4440620A

    公开(公告)日:1984-04-03

    申请号:US449700

    申请日:1982-12-14

    CPC分类号: G01N33/4925 G01N27/333

    摘要: A measuring electrode device comprises a pH electrode arranged within an outer casing and having a pH sensitive member in contact with an electrolyte housed in the outer casing. The electrolyte reacts with a predetermined gas in a liquid to be inspected and varies its pH. The pH sensitive member includes a semiconductor substrate and a pH sensitive membrane formed on the substrate and in contact with the electrolyte. The pH sensitive membrane is formed of at least one element selected from the group consisting of silicon nitride, aluminum oxide and tantalum pentoxide. A potential difference is produced between the pH sensitive membrane and the electrolyte in accordance with the variation of the pH of the electrolyte. Thus, a potential difference is produced between the pH electrode and a reference electrode according to the variation of the pH of the electrolyte.

    摘要翻译: 测量电极装置包括布置在外壳内并具有与容纳在外壳中的电解液接触的pH敏感构件的pH电极。 电解液与要检查的液体中的预定气体反应并改变其pH。 pH敏感元件包括半导体衬底和形成在衬底上并与电解质接触的pH敏感膜。 pH敏感膜由选自氮化硅,氧化铝和五氧化二钽中的至少一种元素形成。 根据电解质的pH的变化,在pH敏感膜和电解质之间产生电位差。 因此,根据电解质的pH的变化,在pH电极和参考电极之间产生电位差。

    Data processing device accessing a memory in response to a request made by an external bus master
    6.
    发明授权
    Data processing device accessing a memory in response to a request made by an external bus master 有权
    数据处理设备响应外部总线主机的请求访问存储器

    公开(公告)号:US07062588B2

    公开(公告)日:2006-06-13

    申请号:US09789731

    申请日:2001-02-22

    CPC分类号: G06F13/4243

    摘要: A data processing device exchanges data between a memory and an external bus master. The memory is connected to the data processing device via a first bus so as to store data. The external bus master is connected to the data processing device via a second bus so as to process data. The data processing device comprises a bus-transmission control unit accessing the memory via the first bus in response to a request to access the memory made by the external bus master via the second bus.

    摘要翻译: 数据处理装置在存储器和外部总线主机之间交换数据。 存储器通过第一总线连接到数据处理设备,以便存储数据。 外部总线主机通过第二总线连接到数据处理设备,以便处理数据。 数据处理装置包括总线传输控制单元,响应于通过第二总线访问外部总线主机所做的存储器的请求,经由第一总线访问存储器。

    Chemically sensitive element
    7.
    发明授权
    Chemically sensitive element 失效
    化学敏感元件

    公开(公告)号:US4512870A

    公开(公告)日:1985-04-23

    申请号:US557610

    申请日:1983-12-02

    CPC分类号: G01N27/414

    摘要: A chemical sensing element suitable for measurement of the activity or the concentration of a specific ion contained in an electrolyte is provided with an optically opaque membrane between a gate insulating membrane and an ion sensing membrane of a field-effect type transistor. Since the opaque membrane is provided, extraneous light impinging on a gate is blocked by the opaque membrane, whereby an erroneous potential due to extraneous light is prevented. Accordingly, the accurate measurement of the activity or the concentration of a specific ion contained in an electrolyte may be achieved even in intense ambient light.

    摘要翻译: 适用于测量电解液中所含特定离子的活性或浓度的化学传感元件在栅极绝缘膜和场效应晶体管的离子感测膜之间设置有不透光的膜。 由于提供了不透明的膜,所以入射门的外来光被不透明膜阻挡,从而防止由于外来光引起的错误的电位。 因此,即使在强烈的环境光下也可以精确地测量电解液中包含的特定离子的活性或浓度。

    Ion selective electrode
    8.
    发明授权
    Ion selective electrode 失效
    离子选择电极

    公开(公告)号:US4388167A

    公开(公告)日:1983-06-14

    申请号:US413133

    申请日:1982-08-30

    CPC分类号: G01N27/333

    摘要: An ion selective electrode having a silicon wafer substrate secured to one end of a tube made of insulating material by an adhesive agent and an ion sensitive film applied on the outer surface of silicon wafer substrate is disclosed. In order to prevent a portion of a side edge of silicon wafer substrate from being exposed to a sample liquid to be measured, the side edge of silicon wafer substrate is tapered and the ion sensitive film is applied on the tapered side edge as well as on the outer surface of silicon wafer substrate. The tapered side edge may be simply formed by effecting an anisotropic etching for a silicon wafer.

    摘要翻译: 公开了一种离子选择电极,其具有通过粘合剂固定在由绝缘材料制成的管的一端的硅晶片衬底和施加在硅晶片衬底的外表面上的离子敏感膜。 为了防止硅晶片衬底的侧边缘的一部分暴露于要测量的样品液体,硅晶片衬底的侧边缘是锥形的,并且离子敏感膜被施加在锥形侧边缘上 硅晶片衬底的外表面。 可以通过对硅晶片进行各向异性蚀刻来简单地形成锥形侧边缘。