公开(公告)号：US09281438B2

公开(公告)日：2016-03-08

申请号：US12679372

申请日：2008-09-26

申请人： Takeshi Hatakeyama ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Osamu Yamada

发明人： Takeshi Hatakeyama ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Osamu Yamada

IPC分类号： C30B19/02 ,  H01L33/00 ,  C30B9/10 ,  C30B29/40 ,  H01L21/02

CPC分类号： H01L33/0075 ,  C30B9/10 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  Y10T117/1024

摘要： A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.

摘要翻译： 将III族元素氮化物单晶生长在浸渍在坩埚中的原料液中并含有III族材料和碱金属和碱土金属之一的模板上。 将单晶生长后剩余的原料液冷却固化，通过将含有羟基的溶液进料到坩埚中，将凝固的原料从模板周围除去，因此III族元素氮化物单晶 从凝固的原料中取出。 模板设置在远离坩埚底部的位置。

公开(公告)号：US08574361B2

公开(公告)日：2013-11-05

申请号：US12524811

申请日：2008-03-05

申请人： Osamu Yamada ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Takeshi Hatakeyama ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

发明人： Osamu Yamada ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Takeshi Hatakeyama ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

IPC分类号： H01L21/322

CPC分类号： H01L31/03044 ,  C30B9/10 ,  C30B11/12 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  G02B1/02

摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

摘要翻译： 提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。 该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器， 导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。 在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

公开(公告)号：US20100213576A1

公开(公告)日：2010-08-26

申请号：US12681718

申请日：2008-10-08

申请人： Kouichi Hiranaka ,  Hisashi Minemoto ,  Takeshi Hatakeyama ,  Osamu Yamada

发明人： Kouichi Hiranaka ,  Hisashi Minemoto ,  Takeshi Hatakeyama ,  Osamu Yamada

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L21/66

CPC分类号： C30B29/403 ,  B82Y20/00 ,  C30B9/10 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/0206 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed is a method for producing a group III nitride crystal substrate. A group III nitride crystal is formed by a growth method using a flux. The group III nitride crystal substrate is heat treated at a temperature equal to or higher than the lowest temperature at which the flux contained inside the group III nitride crystal substrate through intrusion into the crystal during the crystal formation can be discharged to outside the group III nitride crystal substrate, and equal to or lower than the highest temperature at which the surface of the group III nitride crystal substrate is not decomposed.

摘要翻译： 公开了一种III族氮化物晶体基板的制造方法。 通过使用助熔剂的生长方法形成III族氮化物晶体。 III族氮化物晶体衬底在等于或高于在晶体形成期间通过侵入晶体的III族氮化物晶体衬底内的焊剂可以排出到III族氮化物之外的最低温度的温度下进行热处理 晶体基板，并且等于或低于III族氮化物晶体基板的表面不分解的最高温度。

公开(公告)号：US20100078606A1

公开(公告)日：2010-04-01

申请号：US12524811

申请日：2008-03-05

申请人： Osamu Yamada ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Takeshi Hatakeyama ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

发明人： Osamu Yamada ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Takeshi Hatakeyama ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

IPC分类号： H01B1/06 ,  C01B21/06 ,  C30B17/00

CPC分类号： H01L31/03044 ,  C30B9/10 ,  C30B11/12 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  G02B1/02

摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

摘要翻译： 提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。 该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器， 导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。 在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

公开(公告)号：US20140030549A1

公开(公告)日：2014-01-30

申请号：US14041366

申请日：2013-09-30

申请人： Osamu Yamada ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Takeshi Hatakeyama ,  Takamoto Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

发明人： Osamu Yamada ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Takeshi Hatakeyama ,  Takamoto Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

IPC分类号： H01L31/0304 ,  C30B29/40 ,  G02B1/02

CPC分类号： H01L31/03044 ,  C30B9/10 ,  C30B11/12 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  G02B1/02

摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

摘要翻译： 提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。 该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器， 导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。 在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

公开(公告)号：US20100192839A1

公开(公告)日：2010-08-05

申请号：US12679372

申请日：2008-09-26

申请人： Takeshi Hatakeyama ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Osamu Yamada

发明人： Takeshi Hatakeyama ,  Hisashi Minemoto ,  Kouichi Hiranaka ,  Osamu Yamada

IPC分类号： C30B19/08

CPC分类号： H01L33/0075 ,  C30B9/10 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  Y10T117/1024

摘要： A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible.

摘要翻译： 将III族元素氮化物单晶生长在浸渍在坩埚中的原料液中并含有III族材料和碱金属和碱土金属之一的模板上。 将单晶生长后剩余的原料液冷却固化，通过将含有羟基的溶液进料到坩埚中，将凝固的原料从模板周围除去，因此III族元素氮化物单晶 从凝固的原料中取出。 模板设置在远离坩埚底部的位置。

公开(公告)号：US08916124B2

公开(公告)日：2014-12-23

申请号：US12745809

申请日：2008-11-27

申请人： Hisashi Minemoto ,  Osamu Yamada ,  Takeshi Hatakeyama ,  Hiroaki Hoshikawa ,  Yasunori Tokunou

发明人： Hisashi Minemoto ,  Osamu Yamada ,  Takeshi Hatakeyama ,  Hiroaki Hoshikawa ,  Yasunori Tokunou

IPC分类号： C01B21/06 ,  C30B29/38 ,  C30B15/00 ,  C30B19/00 ,  C30B7/00 ,  C30B9/00 ,  C30B11/00 ,  C30B17/00 ,  C30B21/02 ,  C30B23/00 ,  C30B25/00 ,  C30B29/10 ,  C30B29/40 ,  C30B19/06 ,  C30B9/10 ,  C30B19/02

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B17/00 ,  C30B19/02 ,  C30B19/06 ,  C30B19/063 ,  C30B29/406 ,  Y10T117/1096

摘要： When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an X-axis and a Y-axis.

摘要翻译： 当III族氮化物晶体在包含至少III族元素，氮和碱金属或碱土金属的熔体50的含氮气体的加压气氛中生长时，保持容器 上述熔体50围绕X轴和Y轴方向彼此不同的两个轴摆动。

公开(公告)号：US20100260656A1

公开(公告)日：2010-10-14

申请号：US12745809

申请日：2008-11-27

申请人： Hisashi Minemoto ,  Osamu Yamada ,  Takeshi Hatakeyama ,  Hiroaki Hoshikawa ,  Yasunori Tokunou

发明人： Hisashi Minemoto ,  Osamu Yamada ,  Takeshi Hatakeyama ,  Hiroaki Hoshikawa ,  Yasunori Tokunou

IPC分类号： C30B15/02 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B17/00 ,  C30B19/02 ,  C30B19/06 ,  C30B19/063 ,  C30B29/406 ,  Y10T117/1096

摘要： When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an x-axis and a Y-axis.

摘要翻译： 当III族氮化物晶体在包含至少III族元素，氮和碱金属或碱土金属的熔体50的含氮气体的加压气氛中生长时，保持容器 上述熔体50围绕彼此不同的方向（例如x轴和Y轴）绕两个轴摆动。

公开(公告)号：US20100230713A1

公开(公告)日：2010-09-16

申请号：US12161393

申请日：2007-01-19

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Yasutoshi Kawaguchi ,  Yasuhito Takahashi ,  Yoshiaki Hasegawa

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Yasutoshi Kawaguchi ,  Yasuhito Takahashi ,  Yoshiaki Hasegawa

IPC分类号： H01L33/30 ,  C30B19/02

CPC分类号： H01S5/32341 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/22 ,  H01S5/305

摘要： An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm−3. The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.

摘要翻译： 本发明的目的是为了获得使用III族氮化物半导体衬底的半导体发光元件，通过选择特定的衬底掺杂剂并控制其浓度来获得具有优异的光提取性能的半导体发光元件 。 半导体发光元件包括由包含锗（Ge）作为掺杂剂的III族氮化物半导体构成的衬底，由形成在衬底上的III族氮化物半导体构成的n型半导体层，由组 形成在n型半导体层上的III族氮化物半导体以及形成在有源层上形成的III族氮化物半导体的p型半导体层，其中基板的锗（Ge）浓度为2×1017〜2×1019 cm-3。 使用包含至少III族元素，碱金属或碱土金属和锗（Ge）和氮的熔体在含氮气氛中生产基材。

公开(公告)号：US07754012B2

公开(公告)日：2010-07-13

申请号：US12082745

申请日：2008-04-14

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

IPC分类号： C30B25/00 ,  C30B23/00 ,  C30B28/12 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.

摘要翻译： 提供了高品质的III族氮化物晶体的制造方法。 通过该方法，将晶体原料溶液和含氮气体引入加热的反应器容器中，并在施加压力的气氛中生长晶体。 气体通过反应器容器的气体入口从气体供给装置引入反应器容器，然后通过反应器容器的气体出口被排出到耐压容器的内部。 由于气体直接引入反应容器，因此可以防止附着在耐压容器等上的杂质进入晶体生长部位。 此外，气体流过反应器容器，以抑制气体入口处的蒸发的碱金属等的聚集，并且减少金属蒸气进入气体供应装置的流动。