Mechanism for prevention of neutron radiation in ion implanter beamline
    1.
    发明授权
    Mechanism for prevention of neutron radiation in ion implanter beamline 失效
    离子注入机束线中的中子辐射预防机制

    公开(公告)号:US06608315B1

    公开(公告)日:2003-08-19

    申请号:US09703769

    申请日:2000-11-01

    IPC分类号: H01J37317

    摘要: A mass analysis magnet assembly (16) is provided for use in an ion implanter (10), comprising: (i) a magnet (44) for mass analyzing an ion beam (15) output by an ion source (14), the magnet providing an interior region (49) through which the ion beam passes; and (ii) at least one strike plate (48) in part forming an outer boundary of the interior region (49). The at least one strike plate is comprised of an isotopically pure carbon-based material. The isotopically pure carbon-based material, preferably by mass greater than 99% carbon C-12, prevents neutron radiation when impacted by deuterons extracted from the ion source (14). The strike plate (48) may comprise an upper layer (56) of isotopically pure carbon C-12 isotope positioned atop a lower substrate (54).

    摘要翻译: 提供用于离子注入机(10)的质量分析磁体组件(16),其包括:(i)用于质量分析由离子源(14)输出的离子束(15)的磁体(44),所述磁体 提供离子束通过的内部区域(49); 和(ii)部分地形成内部区域(49)的外边界的至少一个冲击板(48)。 至少一个冲击板由同位素纯的碳基材料组成。 同位素纯碳基材料,优选质量大于99%的碳C-12,当从离子源(14)提取的氘核撞击时,可防止中子辐射。 冲击板(48)可以包括位于下基板(54)顶部的同位素纯碳C-12同位素的上层(56)。

    Time of flight energy measurement apparatus for an ion beam implanter
    2.
    发明授权
    Time of flight energy measurement apparatus for an ion beam implanter 有权
    离子束注入机的飞行时间能量测量装置

    公开(公告)号:US6137112A

    公开(公告)日:2000-10-24

    申请号:US150177

    申请日:1998-09-10

    摘要: An ion implanter including a time of flight energy measurement apparatus for measuring and controlling the energy of an ion beam includes an ion source for generating the ion beam, an ion acceleration assembly for accelerating the beam resulting in the beam comprising a series of ion pulses having a predetermined frequency and beam forming and directing structure for directing the ion beam at workpieces supported in an implantation chamber of the implanter. The time of flight energy measurement apparatus includes spaced apart first and second sensors, timing circuitry and conversion circuitry. The time of flight energy measurement apparatus measures an average kinetic energy of an ion included in a selected ion pulse of the ion beam. The first sensor and a second sensor are disposed adjacent the ion beam and spaced a predetermined distance apart, the second sensor being downstream of the first sensor. The first sensor generates a signal when an ion pulse of the ion beam passes the first sensor and the second sensor generates a signal when an ion pulse of the ion beam passes the second sensor. The timing circuitry of the energy measurement apparatus is electrically coupled to the first and second sensors and determines an elapsed time, t, for the selected ion pulse to traverse the predetermined distance between the first and second sensors. The timing circuitry calculates an average number of ion pulses, N, in the ion beam between the first and second sensors based on the approximation of the ion beam energy and calculates an offset time, t(offset), for the selected ion pulse using the formula, t(offset)=N.times.T. The timing circuitry than determines the elapsed time, t. The conversion circuitry converts the elapsed time, t, for the selected ion pulse into a measure of the energy of the ion beam.

    摘要翻译: 包括用于测量和控制离子束的能量的飞行时间能量测量装置的离子注入机包括用于产生离子束的离子源,用于加速所述束的束的离子加速组件,所述离子加速组件包括一系列具有 预定的频率和波束形成和引导结构,用于将离子束引导到支撑在注入机的植入室中的工件上。 飞行时间能量测量装置包括间隔开的第一和第二传感器,定时电路和转换电路。 飞行时间能量测量装置测量离子束的选定离子脉冲中包含的离子的平均动能。 第一传感器和第二传感器邻近离子束设置并间隔预定距离,第二传感器位于第一传感器的下游。 当离子束的离子脉冲通过第一传感器时,第一传感器产生信号,当离子束的离子脉冲通过第二传感器时,第二传感器产生信号。 能量测量装置的定时电路电耦合到第一和第二传感器,并且确定所选离子脉冲经过第一和第二传感器之间的预定距离的经过时间t。 定时电路基于离子束能量的近似计算第一和第二传感器之间的离子束中的离子脉冲的平均数目N,并且使用该离子脉冲计算所选离子脉冲的偏移时间t(偏移) 公式,t(offset)= NxT。 定时电路确定经过的时间t。 转换电路将所选择的离子脉冲的经过时间t转换成离子束的能量的量度。

    Continuously variable aperture for high-energy ion implanter
    3.
    发明授权
    Continuously variable aperture for high-energy ion implanter 有权
    高能离子注入机连续可变孔径

    公开(公告)号:US06207964B1

    公开(公告)日:2001-03-27

    申请号:US09253375

    申请日:1999-02-19

    IPC分类号: H01J37317

    摘要: A variable aperture assembly (30) is provided for controlling the amount of ion beam current passing therethrough in an ion implantation system (10). The aperture assembly (30) comprises an aperture (44) defined by opposing first and second aperture plates (44A, 44B) through which an ion beam passes; control arms (46A, 46B) connected, respectively, to the first and second aperture plates (44A, 44B); and an aperture drive mechanism (36) for simultaneously imparting movement to the control arms in opposite directions, to adjust a gap (50) between the aperture plates (44A, 44B) to thereby control the amount of current passing through the aperture (44). Each of the opposite directions in which the control arms move is generally perpendicular to an axis along which the ion beam passes. A control system (120) is also provided for automatically adjusting the aperture gap (50) based on inputs representing actual ion beam current passing through the implanter, desired ion beam current, and aperture position. The control system (120) includes control logic (122, 124) for receiving the inputs and outputting control signals (126, 128) to the aperture drive mechanism to adjust the aperture gap.

    摘要翻译: 提供可变孔径组件(30)用于控制在离子注入系统(10)中通过其中的离子束电流的量。 孔径组件(30)包括由相对的第一和第二孔板(44A,44B)限定的孔(44),离子束通过该孔径通过; 分别连接到第一和第二孔板(44A,44B)的控制臂(46A,46B); 以及孔径驱动机构(36),用于同时在相反方向上向所述控制臂施加运动,以调节所述孔板(44A,44B)之间的间隙(50),从而控制通过所述孔(44)的电流量, 。 控制臂移动的相反方向中的每一个大体上垂直于离子束通过的轴线。 还提供控制系统(120),用于基于表示通过注入机的实际离子束电流,期望的离子束电流和孔径位置的输入来自动调整孔隙(50)。 控制系统(120)包括用于接收输入的控制逻辑(122,124),并向孔径驱动机构输出控制信号(126,128)以调节孔隙。

    Method for extending equipment uptime in ion implantation
    4.
    发明授权
    Method for extending equipment uptime in ion implantation 失效
    离子注入延长设备正常运行时间的方法

    公开(公告)号:US07875125B2

    公开(公告)日:2011-01-25

    申请号:US12234202

    申请日:2008-09-19

    IPC分类号: B08B5/00

    摘要: The invention features in-situ cleaning process for an ion source and associated extraction electrodes and similar components of the ion-beam producing system, which chemically removes carbon deposits, increasing service lifetime and performance, without the need to disassemble the system. In particular, an aspect of the invention is directed to an activating, catalytic, or reaction promoting species added to the reactive species to effectively convert the non-volatile molecular residue into a volatile species which can be removed by conventional means.

    摘要翻译: 本发明的特征在于离子源和相关联的提取电极和离子束产生系统的类似组分的原位清洁方法,其化学去除碳沉积物,增加使用寿命和性能,而不需要拆卸系统。 特别地,本发明的一个方面涉及添加到反应物种中的活化,催化或反应促进物质,以有效地将非挥发性分子残基转化成可通过常规方法除去的挥发性物质。

    METHOD FOR EXTENDING EQUIPMENT UPTIME IN ION IMPLANTATION
    5.
    发明申请
    METHOD FOR EXTENDING EQUIPMENT UPTIME IN ION IMPLANTATION 失效
    用于延长离子植入装置的方法

    公开(公告)号:US20090081874A1

    公开(公告)日:2009-03-26

    申请号:US12234202

    申请日:2008-09-19

    IPC分类号: H01L21/302

    摘要: The invention features in-situ cleaning process for an ion source and associated extraction electrodes and similar components of the ion-beam producing system, which chemically removes carbon deposits, increasing service lifetime and performance, without the need to disassemble the system. In particular, an aspect of the invention is directed to an activating, catalytic, or reaction promoting species added to the reactive species to effectively convert the non-volatile molecular residue into a volatile species which can be removed by conventional means.

    摘要翻译: 本发明的特征在于离子源和相关联的提取电极和离子束产生系统的类似组分的原位清洁方法,其化学去除碳沉积物,增加使用寿命和性能,而不需要拆卸系统。 特别地,本发明的一个方面涉及添加到反应物种中的活化,催化或反应促进物质,以有效地将非挥发性分子残基转化成可通过常规方法除去的挥发性物质。