Mechanism for prevention of neutron radiation in ion implanter beamline
    1.
    发明授权
    Mechanism for prevention of neutron radiation in ion implanter beamline 失效
    离子注入机束线中的中子辐射预防机制

    公开(公告)号:US06608315B1

    公开(公告)日:2003-08-19

    申请号:US09703769

    申请日:2000-11-01

    IPC分类号: H01J37317

    摘要: A mass analysis magnet assembly (16) is provided for use in an ion implanter (10), comprising: (i) a magnet (44) for mass analyzing an ion beam (15) output by an ion source (14), the magnet providing an interior region (49) through which the ion beam passes; and (ii) at least one strike plate (48) in part forming an outer boundary of the interior region (49). The at least one strike plate is comprised of an isotopically pure carbon-based material. The isotopically pure carbon-based material, preferably by mass greater than 99% carbon C-12, prevents neutron radiation when impacted by deuterons extracted from the ion source (14). The strike plate (48) may comprise an upper layer (56) of isotopically pure carbon C-12 isotope positioned atop a lower substrate (54).

    摘要翻译: 提供用于离子注入机(10)的质量分析磁体组件(16),其包括:(i)用于质量分析由离子源(14)输出的离子束(15)的磁体(44),所述磁体 提供离子束通过的内部区域(49); 和(ii)部分地形成内部区域(49)的外边界的至少一个冲击板(48)。 至少一个冲击板由同位素纯的碳基材料组成。 同位素纯碳基材料,优选质量大于99%的碳C-12,当从离子源(14)提取的氘核撞击时,可防止中子辐射。 冲击板(48)可以包括位于下基板(54)顶部的同位素纯碳C-12同位素的上层(56)。

    Time of flight energy measurement apparatus for an ion beam implanter
    2.
    发明授权
    Time of flight energy measurement apparatus for an ion beam implanter 有权
    离子束注入机的飞行时间能量测量装置

    公开(公告)号:US6137112A

    公开(公告)日:2000-10-24

    申请号:US150177

    申请日:1998-09-10

    摘要: An ion implanter including a time of flight energy measurement apparatus for measuring and controlling the energy of an ion beam includes an ion source for generating the ion beam, an ion acceleration assembly for accelerating the beam resulting in the beam comprising a series of ion pulses having a predetermined frequency and beam forming and directing structure for directing the ion beam at workpieces supported in an implantation chamber of the implanter. The time of flight energy measurement apparatus includes spaced apart first and second sensors, timing circuitry and conversion circuitry. The time of flight energy measurement apparatus measures an average kinetic energy of an ion included in a selected ion pulse of the ion beam. The first sensor and a second sensor are disposed adjacent the ion beam and spaced a predetermined distance apart, the second sensor being downstream of the first sensor. The first sensor generates a signal when an ion pulse of the ion beam passes the first sensor and the second sensor generates a signal when an ion pulse of the ion beam passes the second sensor. The timing circuitry of the energy measurement apparatus is electrically coupled to the first and second sensors and determines an elapsed time, t, for the selected ion pulse to traverse the predetermined distance between the first and second sensors. The timing circuitry calculates an average number of ion pulses, N, in the ion beam between the first and second sensors based on the approximation of the ion beam energy and calculates an offset time, t(offset), for the selected ion pulse using the formula, t(offset)=N.times.T. The timing circuitry than determines the elapsed time, t. The conversion circuitry converts the elapsed time, t, for the selected ion pulse into a measure of the energy of the ion beam.

    摘要翻译: 包括用于测量和控制离子束的能量的飞行时间能量测量装置的离子注入机包括用于产生离子束的离子源,用于加速所述束的束的离子加速组件,所述离子加速组件包括一系列具有 预定的频率和波束形成和引导结构,用于将离子束引导到支撑在注入机的植入室中的工件上。 飞行时间能量测量装置包括间隔开的第一和第二传感器,定时电路和转换电路。 飞行时间能量测量装置测量离子束的选定离子脉冲中包含的离子的平均动能。 第一传感器和第二传感器邻近离子束设置并间隔预定距离,第二传感器位于第一传感器的下游。 当离子束的离子脉冲通过第一传感器时,第一传感器产生信号,当离子束的离子脉冲通过第二传感器时,第二传感器产生信号。 能量测量装置的定时电路电耦合到第一和第二传感器,并且确定所选离子脉冲经过第一和第二传感器之间的预定距离的经过时间t。 定时电路基于离子束能量的近似计算第一和第二传感器之间的离子束中的离子脉冲的平均数目N,并且使用该离子脉冲计算所选离子脉冲的偏移时间t(偏移) 公式,t(offset)= NxT。 定时电路确定经过的时间t。 转换电路将所选择的离子脉冲的经过时间t转换成离子束的能量的量度。

    Methods of implanting ions and ion sources used for same
    3.
    发明申请
    Methods of implanting ions and ion sources used for same 审中-公开
    植入离子和离子源的方法

    公开(公告)号:US20070178678A1

    公开(公告)日:2007-08-02

    申请号:US11342183

    申请日:2006-01-28

    IPC分类号: H01L21/26

    摘要: Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.

    摘要翻译: 提供了用于其的离子注入和离子源的方法。 该方法涉及从包含多个元素的源馈送气体产生离子。 例如,源原料气体可以包含硼和至少两个其它元素(例如,X a,B B,B和C)。 使用这种源进料气体可以产生比某些常规方法多的优点,包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。 此外,在某些实施方案中,源进料气体的组成可以选择为在相对较高的温度(例如,大于350℃)下是热稳定的,其允许在许多常规离子源中使用这种气体(例如,间接加热 阴极(IHC),伯纳斯)在使用过程中产生这种温度。

    Integrated resonator and amplifier system
    4.
    发明授权
    Integrated resonator and amplifier system 有权
    集成谐振器和放大器系统

    公开(公告)号:US06653803B1

    公开(公告)日:2003-11-25

    申请号:US09583157

    申请日:2000-05-30

    IPC分类号: H05H900

    CPC分类号: H05H7/02

    摘要: An integrated RF amplifier and resonator is provided for use with an ion accelerator. The amplifier includes an output substantially directly coupled with a resonator coil. The amplifier output may be coupled capacitively or inductively. In addition, an apparatus is provided for accelerating ions in an ion implanter. The apparatus comprises an amplifier with an RF output, a tank circuit with a coil substantially directly coupled to the RF output of the amplifier, and an electrode connected to the coil for accelerating ions. Also provided is a method for coupling an RF amplifier with a resonator in an ion accelerator. The method comprises connecting the RF output of the amplifier to a coupler, and locating the coupler proximate the coil, thereby substantially directly coupling the RF output of the amplifier with the resonator coil.

    摘要翻译: 提供集成的RF放大器和谐振器用于离子加速器。 放大器包括基本上直接与​​谐振器线圈耦合的输出。 放大器输出可以电容或电感耦合。 此外,提供了用于加速离子注入机中的离子的装置。 该装置包括具有RF输出的放大器,具有基本上直接耦合到放大器的RF输出的线圈的振荡电路,以及连接到用于加速离子的线圈的电极。 还提供了一种在离子加速器中将RF放大器与谐振器耦合的方法。 该方法包括将放大器的RF输出连接到耦合器,并将耦合器定位在线圈附近,从而基本上将放大器的RF输出与谐振器线圈直接耦合。

    Microchannel plate devices with tunable resistive films
    6.
    发明授权
    Microchannel plate devices with tunable resistive films 有权
    具有可调电阻膜的微通道板器件

    公开(公告)号:US08237129B2

    公开(公告)日:2012-08-07

    申请号:US12392064

    申请日:2009-02-24

    IPC分类号: G01T3/00

    CPC分类号: H01J43/246 G01T3/08

    摘要: A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.

    摘要翻译: 用于检测中子的微通道板包括富氢聚合物基底,其限定从基底的顶表面延伸到基底的底表面的多个通道,其中中子与多个通道相互作用以产生至少一个二次电子 。 顶部电极位于衬底的顶表面上,底部电极位于衬底的底表面上。 电阻层形成在多个通道的外表面上,其提供基本恒定的电阻率的欧姆导电。 在电阻层上形成发光层。 中子相互作用产物与由衬底和发射膜限定的多个通道相互作用以产生在多个通道内级联的二次电子,以提供与中子检测有关的放大信号。

    Architecture for ribbon ion beam ion implanter system
    7.
    发明授权
    Architecture for ribbon ion beam ion implanter system 有权
    带状离子束离子注入机系统的结构

    公开(公告)号:US07394079B2

    公开(公告)日:2008-07-01

    申请号:US11275772

    申请日:2006-01-27

    IPC分类号: H01J37/317

    摘要: An architecture for a ribbon ion beam ion implanter system is disclosed. In one embodiment, the architecture includes an acceleration/deceleration parallelizing lens system for receiving a fanned ribbon ion beam and for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam into a substantially parallel ribbon ion beam, and an energy filter system downstream from the acceleration/deceleration parallelizing lens system and prior to a work piece to be implanted by the substantially parallel ribbon ion beam. The acceleration/deceleration parallelizing lens system includes lenses for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam and acceleration/deceleration lenses for accelerating or decelerating the substantially parallel ribbon ion beam. The parallelizing lens allows delivery of a high current ribbon ion beam to the work piece with energy that can extend down to as low as approximately 200 eV. The energy filter system provides a substantially parallel ribbon ion beam that is substantially free of energy contamination.

    摘要翻译: 公开了一种带状离子束离子注入机系统的结构。 在一个实施例中,该架构包括用于接收扇形带状离子束的加速/减速并行化透镜系统,并且至少将扇形带状离子束并行(并且也可能加速或减速)到基本上平行的带状离子束中,并且能量 过滤系统在加速/减速并行化透镜系统的下游,以及待通过基本上平行的带状离子束植入的工件之前。 加速/减速并行化透镜系统包括用于至少并行(也可能加速或减速)扇形带状离子束和用于加速或减速基本上平行的带状离子束的加速/减速透镜的透镜。 并行化透镜允许将高电流带状离子束以能够向下延伸至低至约200eV的能量传递到工件。 能量过滤系统提供基本上没有能量污染的基本平行的带状离子束。

    Slit double gap buncher and method for improved ion bunching in an ion implantation system
    8.
    发明授权
    Slit double gap buncher and method for improved ion bunching in an ion implantation system 有权
    狭缝双缝隙聚束器和离子注入系统中改进离子聚束的方法

    公开(公告)号:US06635890B2

    公开(公告)日:2003-10-21

    申请号:US10224779

    申请日:2002-08-21

    IPC分类号: H01J37317

    摘要: An ion buncher stage for a linear accelerator system is disclosed for bunching ions in an ion implantation system. The ion buncher stage may be employed upstream of one or more accelerating stages such that the loss of ions in the linear accelerator system is reduced. The invention further includes an asymmetrical double gap buncher stage, as well as a slit buncher stage for further improvement of ion implantation efficiency. Also disclosed are methods for accelerating ions in an ion implanter linear accelerator.

    摘要翻译: 公开了用于在离子注入系统中聚束离子的用于线性加速器系统的离子聚束器级。 可以在一个或多个加速阶段的上游使用离子聚束器阶段,使得线性加速器系统中的离子的损失减少。 本发明还包括不对称双间隙聚束器阶段,以及用于进一步提高离子注入效率的狭缝分束器台。 还公开了用于在离子注入机线性加速器中加速离子的方法。

    Glass-like insulator for electrically isolating electrodes from ion implanter housing
    9.
    发明授权
    Glass-like insulator for electrically isolating electrodes from ion implanter housing 有权
    用于将电极与离子注入机外壳电隔离的玻璃状绝缘体

    公开(公告)号:US06291828B1

    公开(公告)日:2001-09-18

    申请号:US09469068

    申请日:1999-12-21

    IPC分类号: G21K510

    摘要: An electrostatic quadrupole lens assembly (60) is provided for an ion implanter (10) having an axis (86) along which an ion beam passes, comprising: (i) four electrodes (84a-84d) oriented radially outward from the axis (86), approximately 90° apart from each other, such that a first pair of electrodes (84a and 84c) oppose each other approximately 180° apart, and a second pair of electrodes (84b and 84d) also oppose each other approximately 180° apart; (ii) a housing (62) having a mounting surface (64) for mounting the assembly (60) to the implanter, the housing at least partially enclosing the four electrodes (84a-84d); (iii) a first electrical lead (104) for providing electrical power to the first pair of electrodes (84a and 84c); (iv) a second electrical lead (108) for providing electrical power to the second pair of electrodes (84b and 84d); and (v) a plurality of electrically insulating members (92) formed of a glass-like material, comprising at least a first electrically insulating member for attaching the first pair of electrodes (84a and 84c) to the housing, and at least a second electrically insulating member for attaching the second pair of electrodes (84b and 84d) to the housing. The plurality of electrically insulating members (92) are preferably comprised of quartz (SiO2), or a heat resistant and chemical resistant glass material such as Pyrex®. The members (92) resist accumulation of material such as graphite sputtered off of the electrodes (84a-84d) by the ion beam, thus reducing the occurrence of high voltage breakdown and electrical current breakdown.

    摘要翻译: 为具有离子束通过的轴线(86)的离子注入机(10)提供静电四极透镜组件(60),包括:(i)从轴线(86)径向向外取向的四个电极(84a-84d) )彼此大约90°,使得第一对电极(84a和84c)彼此相对大约180°,并且第二对电极(84b和84d)也彼此相对大约180°; (ii)具有用于将所述组件(60)安装到所述注入器的安装表面(64)的壳体(62),所述壳体至少部分地包围所述四个电极(84a-84d); (iii)用于向所述第一对电极(84a和84c)提供电力的第一电引线(104); (iv)用于向所述第二对电极(84b和84d)提供电力的第二电引线(108); 和(v)由玻璃状材料形成的多个电绝缘构件(92),至少包括用于将第一对电极(84a和84c)附接到壳体的第一电绝缘构件,以及至少第二 用于将第二对电极(84b和84d)附接到壳体的电绝缘构件。 多个电绝缘构件(92)优选地由石英(SiO 2)或耐热和耐化学腐蚀的玻璃材料(例如Pyrex)组成。 构件(92)通过离子束阻止溅射在电极(84a-84d)之外的诸如石墨的材料的堆积,从而减少高压击穿和电流击穿的发生。

    Microchannel Plate Devices With Tunable Resistive Films
    10.
    发明申请
    Microchannel Plate Devices With Tunable Resistive Films 审中-公开
    具有可调电阻膜的微通道板装置

    公开(公告)号:US20120273689A1

    公开(公告)日:2012-11-01

    申请号:US13543804

    申请日:2012-07-07

    IPC分类号: G01T3/00

    CPC分类号: H01J43/246 G01T3/08

    摘要: A microchannel plate for detecting neutrons includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of the substrate to a bottom surface of the substrate, where neutrons interact with the plurality of channels to generate at least one secondary electron. A top electrode is positioned on the top surface of the substrate and a bottom electrode is positioned on the bottom surface of the substrate. A resistive layer is formed over an outer surface of the plurality of channels that provides ohmic conduction with a resistivity that is substantially constant. An emissive layer is formed over the resistive layer. Neutron interaction products interact with the plurality of channels defined by the substrate and the emissive films to generate secondary electrons that cascade within the plurality of channels to provide an amplified signal related to the detection of neutrons.

    摘要翻译: 用于检测中子的微通道板包括富氢聚合物基底,其限定从基底的顶表面延伸到基底的底表面的多个通道,其中中子与多个通道相互作用以产生至少一个二次电子 。 顶部电极位于衬底的顶表面上,底部电极位于衬底的底表面上。 电阻层形成在多个通道的外表面上,其提供基本恒定的电阻率的欧姆导电。 在电阻层上形成发光层。 中子相互作用产物与由衬底和发射膜限定的多个通道相互作用以产生在多个通道内级联的二次电子,以提供与中子检测有关的放大信号。