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1.发明授权Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups 失效使用含有两个酸敏感性保护基团的聚合物的辐射敏感正性抗蚀剂公开(公告)号：US06303263B1
公开(公告)日：2001-10-16
申请号：US09030568
申请日：1998-02-25
申请人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
发明人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
IPC分类号： G03F7039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/11 , Y10S430/111
摘要： The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.
摘要翻译： 本发明涉及一种高性能的照射敏感抗蚀剂以及可用于制造它的聚合物树脂组合物。 根据本发明，聚合物树脂包含双嵌段聚合物树脂。 具体地，双嵌段聚合物树脂包含至少两种不同的酸不稳定保护基团，其阻挡聚合物树脂的一些但不是全部的极性官能团。 包含所述双嵌段聚合物树脂的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。
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公开(公告)号：US6103447A
公开(公告)日：2000-08-15
申请号：US30566
申请日：1998-02-25
申请人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
发明人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Qinghuang Lin
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/107 , Y10S430/111
摘要： The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.
摘要翻译： 本发明涉及一种高性能照射敏感正性抗蚀剂及其制备方法。 一方面，本发明的聚合物树脂组合物包含至少两种可混溶的水溶性可溶性聚合物树脂的共混物，其中所述共混物的所述水溶性基础可溶性聚合物树脂之一部分地被高活化能保护基保护，并且 所述共混物的其它水溶性可溶性聚合物树脂部分地被低活化能保护基团保护。 一种包含所述聚合物树脂组合物的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。
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公开(公告)号：US06268436B1
公开(公告)日：2001-07-31
申请号：US09473225
申请日：1999-12-27
申请人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Quighuang Lin
发明人： Kuang-Jung Chen , Ronald A. DellaGuardia , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Quighuang Lin
IPC分类号： C08L6500
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/107 , Y10S430/111
摘要： The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.
摘要翻译： 本发明涉及一种高性能照射敏感正性抗蚀剂及其制备方法。 一方面，本发明的聚合物树脂组合物包含至少两种可混溶的水溶性可溶性聚合物树脂的共混物，其中所述共混物的所述水溶性基础可溶性聚合物树脂之一部分地被高活化能保护基团保护，并且 所述共混物的其它水溶性可溶性聚合物树脂部分地被低活化能保护基团保护。 一种包含所述聚合物树脂组合物的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。
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公开(公告)号：US5609989A
公开(公告)日：1997-03-11
申请号：US466568
申请日：1995-06-06
申请人： Nageshwer R. Bantu , William R. Brunsvold , George J. Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic C. Yang
发明人： Nageshwer R. Bantu , William R. Brunsvold , George J. Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic C. Yang
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.
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公开(公告)号：US5667938A
公开(公告)日：1997-09-16
申请号：US731224
申请日：1996-10-11
申请人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
发明人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.
摘要翻译： 质子海绵，小檗碱和十六烷基三甲基氢氧化铵碱化合物用作基于改性聚羟基苯乙烯（PHS）的化学放大光致抗蚀剂的添加剂。 基础添加剂清除光致抗蚀剂中的游离酸，以保持改性PHS聚合物上的酸不稳定部分。 碱添加剂非常适合于工业加工条件，不与光致抗蚀剂组合物中的光酸化合物反应以形成将阻碍光致抗蚀剂性能的副产物，并延长光致抗蚀剂组合物的保质期。 此外，质子海绵和小檗碱碱添加剂具有与改性PHS聚合物不同的吸收光谱，因此可以容易地测定和控制光致抗蚀剂内基础添加剂的量。
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公开(公告)号：US5919597A
公开(公告)日：1999-07-06
申请号：US961112
申请日：1997-10-30
申请人： Roger F. Sinta , Uday Kumar , George W. Orsula , James I. T. Fahey , William R. Brunsvold , Wu-Song Huang , Ahmad D. Katnani , Ronald W. Nunes , Mahmoud M. Khojasteh
发明人： Roger F. Sinta , Uday Kumar , George W. Orsula , James I. T. Fahey , William R. Brunsvold , Wu-Song Huang , Ahmad D. Katnani , Ronald W. Nunes , Mahmoud M. Khojasteh
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Methods are provided to prepare photoresists without isolation of various components, i.e. in a "one-pot" procedure. Preferred one-pot preparation methods of the invention include preparing a photoresist resin binder in a selected photoresist solvent and, without isolation of the resin binder from the solvent, adding a photoactive component and any other desired photoresist materials to the resin binder in solution to thereby provide a liquid photoresist composition in the solvent in which the resin binder was prepared. The invention also provides novel methods for synthesizing resist resin binders, particularly phenolic polymers that contain phenolic OH groups covalently bonded to another moiety such as acid labile groups or inert blocking groups.
摘要翻译： 提供了方法来制备光刻胶，而不分离各种组分，即在“一锅”方法中。 本发明优选的一锅制备方法包括在所选择的光致抗蚀剂溶剂中制备光致抗蚀剂树脂粘合剂，并且不从树脂粘合剂与溶剂分离，将光敏组分和任何其它所需的光致抗蚀剂材料加入到溶液中的树脂粘合剂中 在其中制备树脂粘合剂的溶剂中提供液体光致抗蚀剂组合物。 本发明还提供用于合成抗蚀剂树脂粘合剂，特别是含有共价键合到另一部分如酚不稳定基团或惰性封闭基团的酚OH基团的酚类聚合物的新方法。
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公开(公告)号：US06200726B1
公开(公告)日：2001-03-13
申请号：US09170756
申请日：1998-10-13
IPC分类号： G03C173
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , G03F7/095 , H01L21/0274 , H01L21/3085 , H01L28/82 , Y10S430/106 , Y10S430/115 , Y10S430/128
摘要： A photo resist composition contains at least one photoacid generator (PAG), wherein at least two photoacids are produced upon exposure of the photo resist to actinic energy and wherein the photo resist is capable of producing a hybrid response. The function of providing generation of two photoacids in a hybrid resist is to optimize the use of hybrid resist by varying the hybrid space width. The at least two photoacids may differ in their effectiveness at catalyzing at least one mechanism of the hybrid response. In particular, one photoacid may be a weaker acid and another may be a stronger acid, wherein there exists a difference of at least four orders of magnitude between the acid dissociation constant (Ka) of the weaker acid and the stronger acid. A method for optimizing space width in a hybrid photo resist includes the steps of: 1) selecting a desired space width; 2) selecting at least one photoacid generator (PAG), wherein at least two photoacids will be produced upon exposure to actinic energy in relative proportions sufficient to produce the desired space width in the hybrid photo resist; and 3) forming a hybrid photo resist composition comprising the at least one PAG. The step of selecting at least one PAG may include first determining the space width produced alone by each photoacid in a group of candidate photoacids and then selecting the photoacids and corresponding at least one PAG that will produce the desired space width.
摘要翻译： 光致抗蚀剂组合物含有至少一种光致酸发生剂（PAG），其中当光致抗蚀剂暴露于光化能时，产生至少两种光酸，并且其中光致抗蚀剂能产生杂化响应。 在混合抗蚀剂中提供两种光酸的产生的功能是通过改变混合空间宽度来优化混合抗蚀剂的使用。 至少两种光酸在催化至少一种混合反应机制方面的有效性可能不同。 特别地，一种光致酸可以是较弱的酸，而另一种可能是较强的酸，其中在较弱酸的酸解离常数（Ka）和较强酸之间存在至少四个数量级的差异。 一种用于优化混合光刻胶中的空间宽度的方法包括以下步骤：1）选择期望的空间宽度; 2）选择至少一种光致酸产生剂（PAG），其中当以相对比例暴露于足以产生混合光致抗蚀剂中所需空间宽度的光化能时，将产生至少两种光酸; 和3）形成包含所述至少一种PAG的混合光刻胶组合物。 选择至少一个PAG的步骤可以包括首先确定由一组候选光酸中的每个光酸酸单独产生的空间宽度，然后选择将产生所需空间宽度的光酸和相应的至少一个PAG。
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8.发明授权Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching 失效具有侧链极性官能化芳族基团和酸不稳定支化的光致抗蚀剂组合物公开(公告)号：US06265134B1
公开(公告)日：2001-07-24
申请号：US09699764
申请日：2000-10-30
IPC分类号： G03C173
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038 , Y10S430/106 , Y10S430/128
摘要： Acid-catalyzed positive photoresist compositions having generally improved performance (especially photoresist compositions having improved contrast (solubility differential), shrinkage and processing kinetics on radiation exposure) are obtained by use of polymers containing pendant polar-functionalized aromatic groups and acid-labile light crosslinking. The photoresist compositions also may contain a photosensitive acid-generating component as well as a solvent and possibly other auxiliary components. The polymers may contain other functional groups or components designed to impart alkaline-solubility, to provide alkaline-solubility protection in the absence of generated acid, etc. The photoresist compositions can be used to create patterned photoresist structures and further to make conductive, semiconductive or insulative structures by photolithography.
摘要翻译： 通过使用含有极性官能化的芳族基团和酸不稳定的轻交联的聚合物，可获得具有通常改进性能的酸催化正性光致抗蚀剂组合物（特别是具有改善的对比度（溶解度差异），收缩和加工动力学的光致抗蚀剂组合物）。 光致抗蚀剂组合物还可以含有感光酸产生组分以及溶剂以及可能的其它辅助组分。 聚合物可以包含设计成赋予碱溶性的其它官能团或组分，以在不存在所产生的酸等的情况下提供碱溶性保护。光致抗蚀剂组合物可用于产生图案化的光致抗蚀剂结构，并进一步制成导电，半导体或 绝缘结构通过光刻。
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9.发明授权Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching 失效具有侧链极性官能化芳族基团和酸不稳定支化的光致抗蚀剂组合物
公开(公告)号：US6140015A
公开(公告)日：2000-10-31
申请号：US209019
申请日：1998-12-10
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038 , Y10S430/106 , Y10S430/128
摘要： Acid-catalyzed positive photoresist compositions having generally improved performance (especially photoresist compositions having improved contrast (solubility differential), shrinkage and processing kinetics on radiation exposure) are obtained by use of polymers containing pendant polar-functionalized aromatic groups and acid-labile light crosslinking. The photoresist compositions also may contain a photosensitive acid-generating component as well as a solvent and possibly other auxiliary components. The polymers may contain other functional groups or components designed to impart alkaline-solubility, to provide alkaline-solubility protection in the absence of generated acid, etc.The photoresist compositions can be used to create patterned photoresist structures and further to make conductive, semiconductive or insulative structures by photolithography.
摘要翻译： 通过使用含有极性官能化的芳族基团和酸不稳定的轻交联的聚合物，可获得具有通常改进性能的酸催化的正性光致抗蚀剂组合物（特别是具有改善的对比度（溶解度差异），收缩和加工动力学的光致抗蚀剂组合物）。 光致抗蚀剂组合物还可以含有感光酸产生组分以及溶剂以及可能的其它辅助组分。 聚合物可以包含设计成赋予碱溶性的其它官能团或组分，以在不存在产生的酸等的情况下提供碱溶性保护。光致抗蚀剂组合物可用于产生图案化的光致抗蚀剂结构，并进一步制备导电，半导电或 绝缘结构通过光刻。
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公开(公告)号：US5733705A
公开(公告)日：1998-03-31
申请号：US730687
申请日：1996-10-11
申请人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khofasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
发明人： Nageshwer Rao Bantu , William Ross Brunsvold , George Joseph Hefferon , Wu-Song Huang , Ahmad D. Katnani , Mahmoud M. Khofasteh , Ratnam Sooriyakumaran , Dominic Changwon Yang
CPC分类号： G03F7/039 , G03F7/0045
摘要： Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.
摘要翻译： 质子海绵，小檗碱和十六烷基三甲基氢氧化铵碱化合物用作基于改性聚羟基苯乙烯（PHS）的化学放大光致抗蚀剂的添加剂。 基础添加剂清除光致抗蚀剂中的游离酸，以保持改性PHS聚合物上的酸不稳定部分。 碱添加剂非常适合于工业加工条件，不与光致抗蚀剂组合物中的光酸化合物反应以形成将阻碍光致抗蚀剂性能的副产物，并延长光致抗蚀剂组合物的保质期。 此外，质子海绵和小檗碱碱添加剂具有与改性PHS聚合物不同的吸收光谱，因此可以容易地测定和控制光致抗蚀剂内基础添加剂的量。
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