摘要:
Disclosed is a magnetic head core material having very high corrosion resistance even under severe conditions and a method for preparing the same. The material consists of 3 to 6 wt % of aluminum, 7 to 12 wt % of silicon, not more than 3 wt % of chromium and the substantial balance being iron.
摘要:
A production method for producing a high permeability alloy film which includes evaporating an alloy material composed of 1-6 wt % Al, 20-35 wt % Si, and the remainder of iron by irradiating the alloy with an electron beam, and then depositing the vapor from the alloy material onto a substrate for a predetermined time to produce an alloy film composition having a high permeability. The vapor deposition onto the substrate is preferably intercepted with the shutter until the concentration of aluminum of the vapor to be deposited has been decreased to a value between 20 and about 4 wt %.
摘要:
A method for producing a high magnetic permeability alloy film, wherein an alloy material composed of 1-6 wt % Al, 20-35 wt % Si and the remainder of iron is irradiated with an electron beam in a vacuum deposition apparatus equipped with an electron gun, and the vapor of the alloy material is deposited on a substrate for a predetermined time to form a high magnetic permeability alloy film, comprising further a step of preventing the irregular deposition caused if the concentration of aluminum in the vapor to be deposited increases.
摘要:
A phosphor element includes a pair of electrodes opposed to each other and a phosphor layer sandwiched between the pair of electrodes and having silicon fine particles whose average particle diameter is not more than 100 nm, and at least a part of a surface of the silicon fine particle is covered with a conductive material. In addition, the conductive material may include an oxide or a composite oxide containing at least one element selected from a group of indium, tin, zinc, and gallium.
摘要:
An electroluminescent element includes a pair of positive electrode and negative electrode facing each other, and at least one phosphor layers formed between the pair of positive electrode and negative electrode. At least one of the phosphor layers is composed of a phosphor layer and a wide band-gap semiconductor layer. The semiconductor layer or the phosphor layer constituting the phosphor layer may be a partially discontinuous layer.
摘要:
A phosphor element (10) includes an electron hole injection electrode (2) and an electron injection electrode (8) disposed opposite to each other, an electron hole transport layer (3), a phosphor layer (4), and an electron transport layer (7) stacked in this order from the side of the electron hole injection electrode toward the side of the electron injection electrode. The stacked layers are sandwiched between the electron hole injection electrode and the electron injection electrode, and. The phosphor layer is formed of an inorganic phosphor material (4) in which at least one part of the surface is covered with an organic material (5).
摘要:
The method of the invention provides a soft magnetic film having a high saturation magnetic flux density and an anisotropy of high magnetic permeability suitable for use in various types of magnetic heads at a high production yield by use of a sputtering apparatus provided with a sputtering electrode, which has permanent magnets arranged above a target 1 mainly of Fe or Co in such a way that lines of magnetic force 3 generated by said permanent magnets are in parallel to the surface of said target 1 and to the center line of said target 1 and have a magnetic strength pattern symmetric with respect to said center line while the lines of magnetic force to the right of said center line are of a reverse direction to those to the left of said center line.
摘要:
A phosphor element (10) includes an electron hole injection electrode (2) and an electron injection electrode (8) disposed opposite to each other, an electron hole transport layer (3), a phosphor layer (4), and an electron transport layer (7) stacked in this order from the side of the electron hole injection electrode toward the side of the electron injection electrode. The stacked layers are sandwiched between the electron hole injection electrode and the electron injection electrode, and. The phosphor layer is formed of an inorganic phosphor material (4) in which at least one part of the surface is covered with an organic material (5).
摘要:
A memory device including a plurality of electric elements corresponding to a plurality of transistors on a one-to-one basis; a word line driver for driving a plurality of word lines; and a bit line/plate line driver for driving a plurality of bit lines and a plurality of plate lines. Each of the plurality of electric elements includes a first electrode connected to one of the transistors corresponding to the electric element, a second electrode connected to one of the plate lines corresponding to the electric element, and a variable-resistance film connected between the first electrode and the second electrode, and the variable-resistance film includes Fe3O4 as a constituent element and has a crystal grain size of 5 nm to 150 nm.
摘要翻译:一种存储器件,包括一对一地对应于多个晶体管的多个电气元件; 用于驱动多个字线的字线驱动器; 以及用于驱动多个位线和多个板线的位线/板线驱动器。 多个电气元件中的每一个包括连接到与电气元件相对应的晶体管之一的第一电极,连接到对应于电气元件的板线之一的第二电极和连接在第一电极之间的可变电阻膜 和第二电极,可变电阻膜包括Fe 3 O 4作为构成元素,并且具有5nm至150nm的晶粒尺寸。
摘要:
An electric element includes: a first electrode; a second electrode; and a variable-resistance film connected between the first electrode and the second electrode. The variable-resistance film includes Fe3O4 as a constituent element and has a crystal grain size of 5 nm to 150 nm.
摘要翻译:电气元件包括:第一电极; 第二电极; 以及连接在第一电极和第二电极之间的可变电阻膜。 可变电阻膜包括Fe 3 O 4作为构成元素,并且具有5nm至150nm的晶粒尺寸。