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    Production method of a high magnetic permeability film
    2.
    发明授权
    Production method of a high magnetic permeability film 失效
    高磁导率膜的制造方法

    公开(公告)号：US4592923A

    公开(公告)日：1986-06-03

    申请号：US664425

    申请日：1984-10-24

    申请人： Masaru Kadono ,  Kumio Nago ,  Shuuhei Tsuchimoto ,  Mitsuhiko Yoshikawa

    发明人： Masaru Kadono ,  Kumio Nago ,  Shuuhei Tsuchimoto ,  Mitsuhiko Yoshikawa

    IPC分类号： C23C14/14 ,  B05D3/06

    CPC分类号： C23C14/14

    摘要： A method for producing a high magnetic permeability alloy film, wherein an alloy material composed of 1-6 wt % Al, 20-35 wt % Si and the remainder of iron is irradiated with an electron beam in a vacuum deposition apparatus equipped with an electron gun, and the vapor of the alloy material is deposited on a substrate for a predetermined time to form a high magnetic permeability alloy film, comprising further a step of preventing the irregular deposition caused if the concentration of aluminum in the vapor to be deposited increases.

    摘要翻译： 一种制造高磁导率合金膜的方法，其中在装有电子的真空沉积设备中用电子束照射由1-6重量％的Al，20-35重量％的Si和剩余的铁组成的合金材料 并且合金材料的蒸气在基板上沉积预定时间以形成高磁导率合金膜，还包括如果要沉积的蒸汽中的铝浓度增加而导致的不规则沉积步骤。

    Light-emitting element and display device
    4.
    发明申请
    Light-emitting element and display device 审中-公开
    发光元件和显示装置

    公开(公告)号：US20060152138A1

    公开(公告)日：2006-07-13

    申请号：US10562796

    申请日：2004-07-01

    申请人： Kenya Hori ,  Masayuki Ono ,  Kumio Nago ,  Toshiyuki Aoyama ,  Kenji Hasegawa ,  Masaru Odagiri

    发明人： Kenya Hori ,  Masayuki Ono ,  Kumio Nago ,  Toshiyuki Aoyama ,  Kenji Hasegawa ,  Masaru Odagiri

    IPC分类号： H01J1/62

    CPC分类号： H05B33/14 ,  C09K11/025 ,  C09K11/59

    摘要： A phosphor element includes a pair of electrodes opposed to each other and a phosphor layer sandwiched between the pair of electrodes and having silicon fine particles whose average particle diameter is not more than 100 nm, and at least a part of a surface of the silicon fine particle is covered with a conductive material. In addition, the conductive material may include an oxide or a composite oxide containing at least one element selected from a group of indium, tin, zinc, and gallium.

    摘要翻译： 荧光体元件包括彼此相对的一对电极和夹在该对电极之间的荧光体层，并且具有平均粒径不大于100nm的硅微粒，并且硅精细表面的至少一部分 颗粒被导电材料覆盖。 另外，导电材料可以包括含有选自铟，锡，锌和镓中的至少一种元素的氧化物或复合氧化物。

    Electroluminescent device and display
    5.
    发明申请
    Electroluminescent device and display 审中-公开
    电致发光装置和显示器

    公开(公告)号：US20060181197A1

    公开(公告)日：2006-08-17

    申请号：US10562791

    申请日：2004-07-01

    申请人： Kumio Nago ,  Masaru Odagiri ,  Masayuki Ono ,  Kenya Hori

    发明人： Kumio Nago ,  Masaru Odagiri ,  Masayuki Ono ,  Kenya Hori

    IPC分类号： H01J1/62

    CPC分类号： H05B33/145 ,  H01J29/26 ,  H01J31/127 ,  H01J2329/00

    摘要： An electroluminescent element includes a pair of positive electrode and negative electrode facing each other, and at least one phosphor layers formed between the pair of positive electrode and negative electrode. At least one of the phosphor layers is composed of a phosphor layer and a wide band-gap semiconductor layer. The semiconductor layer or the phosphor layer constituting the phosphor layer may be a partially discontinuous layer.

    摘要翻译： 电致发光元件包括彼此面对的一对正极和负极，以及形成在所述一对正极和负极之间的至少一个荧光体层。 荧光体层中的至少一个由荧光体层和宽带隙半导体层构成。 构成荧光体层的半导体层或荧光体层可以是部分不连续的层。

    Light emitting element and display device
    6.
    发明申请
    Light emitting element and display device 有权
    发光元件和显示装置

    公开(公告)号：US20060170336A1

    公开(公告)日：2006-08-03

    申请号：US10562794

    申请日：2004-07-01

    申请人： Masayuki Ono ,  Kenya Hori ,  Kumio Nago ,  Toshiyuki Aoyama ,  Kenji Hasegawa ,  Masaru Odagiri

    发明人： Masayuki Ono ,  Kenya Hori ,  Kumio Nago ,  Toshiyuki Aoyama ,  Kenji Hasegawa ,  Masaru Odagiri

    IPC分类号： H05B33/14

    CPC分类号： H01L27/322 ,  H01L27/3244 ,  H01L51/0037 ,  H01L51/0062 ,  H01L51/0081 ,  H01L51/5036

    摘要： A phosphor element (10) includes an electron hole injection electrode (2) and an electron injection electrode (8) disposed opposite to each other, an electron hole transport layer (3), a phosphor layer (4), and an electron transport layer (7) stacked in this order from the side of the electron hole injection electrode toward the side of the electron injection electrode. The stacked layers are sandwiched between the electron hole injection electrode and the electron injection electrode, and. The phosphor layer is formed of an inorganic phosphor material (4) in which at least one part of the surface is covered with an organic material (5).

    摘要翻译： 荧光体元件（10）包括彼此相对设置的电子空穴注入电极（2）和电子注入电极（8），电子空穴传输层（3），荧光体层（4）和电子传输层 （7）从电子空穴注入电极的侧面向电子注入电极侧依次层叠。 层叠的层夹在电子注入电极和电子注入电极之间。 荧光体层由无机荧光体材料（4）形成，其中至少一部分表面被有机材料（5）覆盖。

    Method for making soft magnetic film
    7.
    发明授权
    Method for making soft magnetic film 失效
    制造软磁膜的方法

    公开(公告)号：US5403457A

    公开(公告)日：1995-04-04

    申请号：US111055

    申请日：1993-08-24

    申请人： Kumio Nago ,  Isamu Aokura ,  Hitoshi Yamanishi ,  Koichi Osano ,  Hiroshi Sakakima ,  Toshiyuki Suemitsu

    发明人： Kumio Nago ,  Isamu Aokura ,  Hitoshi Yamanishi ,  Koichi Osano ,  Hiroshi Sakakima ,  Toshiyuki Suemitsu

    IPC分类号： G11B5/147 ,  H01F41/18 ,  H01F41/30 ,  C23C14/35 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/147 ,  H01F41/18 ,  H01F41/302 ,  Y10T29/49034

    摘要： The method of the invention provides a soft magnetic film having a high saturation magnetic flux density and an anisotropy of high magnetic permeability suitable for use in various types of magnetic heads at a high production yield by use of a sputtering apparatus provided with a sputtering electrode, which has permanent magnets arranged above a target 1 mainly of Fe or Co in such a way that lines of magnetic force 3 generated by said permanent magnets are in parallel to the surface of said target 1 and to the center line of said target 1 and have a magnetic strength pattern symmetric with respect to said center line while the lines of magnetic force to the right of said center line are of a reverse direction to those to the left of said center line.

    摘要翻译： 本发明的方法通过使用具有溅射电极的溅射装置，提供了一种具有高饱和磁通密度和高磁导率的各向异性的软磁性膜，其适用于各种类型的磁头，以高产率生产， 其具有主要以Fe或Co布置在目标1上方的永磁体，使得由所述永磁体产生的磁力线3平行于所述目标1的表面和所述目标1的中心线并且具有 相对于所述中心线对称的磁强度图案，而所述中心线右侧的磁力线与所述中心线左侧的磁力线相反。

    Light emitting element and display device having an inorganic phosphor layer
    8.
    发明授权
    Light emitting element and display device having an inorganic phosphor layer 有权
    具有无机荧光体层的发光元件和显示装置

    公开(公告)号：US07982390B2

    公开(公告)日：2011-07-19

    申请号：US10562794

    申请日：2004-07-01

    申请人： Masayuki Ono ,  Kenya Hori ,  Kumio Nago ,  Toshiyuki Aoyama ,  Kenji Hasegawa ,  Masaru Odagiri

    发明人： Masayuki Ono ,  Kenya Hori ,  Kumio Nago ,  Toshiyuki Aoyama ,  Kenji Hasegawa ,  Masaru Odagiri

    IPC分类号： H01L51/00 ,  H05B33/14

    CPC分类号： H01L27/322 ,  H01L27/3244 ,  H01L51/0037 ,  H01L51/0062 ,  H01L51/0081 ,  H01L51/5036

    摘要： A phosphor element (10) includes an electron hole injection electrode (2) and an electron injection electrode (8) disposed opposite to each other, an electron hole transport layer (3), a phosphor layer (4), and an electron transport layer (7) stacked in this order from the side of the electron hole injection electrode toward the side of the electron injection electrode. The stacked layers are sandwiched between the electron hole injection electrode and the electron injection electrode, and. The phosphor layer is formed of an inorganic phosphor material (4) in which at least one part of the surface is covered with an organic material (5).

    摘要翻译： 荧光体元件（10）包括彼此相对设置的电子空穴注入电极（2）和电子注入电极（8），电子空穴传输层（3），荧光体层（4）和电子传输层 （7）从电子空穴注入电极的侧面向电子注入电极侧依次层叠。 层叠的层夹在电子注入电极和电子注入电极之间。 荧光体层由无机荧光体材料（4）形成，其中至少一部分表面被有机材料（5）覆盖。

    Electric element, memory device, and semiconductor integrated circuit
    9.
    发明授权
    Electric element, memory device, and semiconductor integrated circuit 有权
    电气元件，存储器件和半导体集成电路

    公开(公告)号：US07855910B2

    公开(公告)日：2010-12-21

    申请号：US12088295

    申请日：2007-01-19

    申请人： Satoru Mitani ,  Koichi Osano ,  Shunsaku Muraoka ,  Kumio Nago

    发明人： Satoru Mitani ,  Koichi Osano ,  Shunsaku Muraoka ,  Kumio Nago

    IPC分类号： G11C11/00

    CPC分类号： H01L27/101 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    摘要： A memory device including a plurality of electric elements corresponding to a plurality of transistors on a one-to-one basis; a word line driver for driving a plurality of word lines; and a bit line/plate line driver for driving a plurality of bit lines and a plurality of plate lines. Each of the plurality of electric elements includes a first electrode connected to one of the transistors corresponding to the electric element, a second electrode connected to one of the plate lines corresponding to the electric element, and a variable-resistance film connected between the first electrode and the second electrode, and the variable-resistance film includes Fe3O4 as a constituent element and has a crystal grain size of 5 nm to 150 nm.

    摘要翻译： 一种存储器件，包括一对一地对应于多个晶体管的多个电气元件; 用于驱动多个字线的字线驱动器; 以及用于驱动多个位线和多个板线的位线/板线驱动器。 多个电气元件中的每一个包括连接到与电气元件相对应的晶体管之一的第一电极，连接到对应于电气元件的板线之一的第二电极和连接在第一电极之间的可变电阻膜 和第二电极，可变电阻膜包括Fe 3 O 4作为构成元素，并且具有5nm至150nm的晶粒尺寸。