公开(公告)号：US20050244995A1

公开(公告)日：2005-11-03

申请号：US11109642

申请日：2005-04-20

申请人： Kunihiko Fukuchi ,  Toshiyuki Isa ,  Gen Fujii

发明人： Kunihiko Fukuchi ,  Toshiyuki Isa ,  Gen Fujii

IPC分类号： G02F1/1343 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L27/1292 ,  G02F1/13439 ,  H01L27/3244 ,  H01L27/3297 ,  H01L51/56 ,  H01L2251/5315 ,  H01L2251/5323

摘要： An object of the present invention is to provide a method for manufacturing a display device with few steps and high yield. One feature of the invention is to form a first mask pattern having low wettability over a conductive layer, form a second mask pattern having high wettability over the conductive layer using the first mask pattern as a mask, and form a mask pattern for etching the conductive layer by removing the first mask pattern. Another feature is to form a pixel electrode by etching the conductive layer.

摘要翻译： 本发明的目的是提供一种制造具有几个步骤和高产率的显示装置的方法。 本发明的一个特征是形成在导电层上具有低润湿性的第一掩模图案，使用第一掩模图案作为掩模形成在导电层上具有高润湿性的第二掩模图案，并形成蚀刻导电性的掩模图案 通过去除第一掩模图案。 另一个特征是通过蚀刻导电层来形成像素电极。

公开(公告)号：US07416977B2

公开(公告)日：2008-08-26

申请号：US11109642

申请日：2005-04-20

申请人： Kunihiko Fukuchi ,  Toshiyuki Isa ,  Gen Fujii

发明人： Kunihiko Fukuchi ,  Toshiyuki Isa ,  Gen Fujii

IPC分类号： H01L21/44

CPC分类号： H01L27/1292 ,  G02F1/13439 ,  H01L27/3244 ,  H01L27/3297 ,  H01L51/56 ,  H01L2251/5315 ,  H01L2251/5323

摘要： An object of the present invention is to provide a method for manufacturing a display device with few steps and high yield. One feature of the invention is to form a first mask pattern having low wettability over a conductive layer, form a second mask pattern having high wettability over the conductive layer using the first mask pattern as a mask, and form a mask pattern for etching the conductive layer by removing the first mask pattern. Another feature is to form a pixel electrode by etching the conductive layer.

摘要翻译： 本发明的目的是提供一种制造具有几个步骤和高产率的显示装置的方法。 本发明的一个特征是形成在导电层上具有低润湿性的第一掩模图案，使用第一掩模图案作为掩模形成在导电层上具有高润湿性的第二掩模图案，并形成蚀刻导电性的掩模图案 通过去除第一掩模图案。 另一个特征是通过蚀刻导电层来形成像素电极。

公开(公告)号：US20090325333A1

公开(公告)日：2009-12-31

申请号：US12552305

申请日：2009-09-02

申请人： Kunihiko Fukuchi ,  Gen Fujii ,  Osamu Nakamura ,  Shinji Maekawa

发明人： Kunihiko Fukuchi ,  Gen Fujii ,  Osamu Nakamura ,  Shinji Maekawa

IPC分类号： H01L33/00

CPC分类号： H01L29/78678 ,  C25D5/022 ,  G02F2001/136295 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78696 ,  H01L51/56 ,  H01L2224/73204 ,  H01L2224/73265

摘要： According to one aspect of the present invention, at least one or more of patterns required for manufacturing a display device, such as a conductive layer which forms a wiring or an electrode and a mask, is formed by a droplet discharging method. At that time, a portion of the gate insulating film where is not located under the semiconductor layer is removed during manufacturing steps of the present invention.

摘要翻译： 根据本发明的一个方面，通过液滴喷射法形成制造显示装置所需的至少一种或多种图案，例如形成布线的导电层或电极和掩模。 此时，在本发明的制造工序中，除去不在半导体层下方的栅极绝缘膜的一部分。

公开(公告)号：US07883912B2

公开(公告)日：2011-02-08

申请号：US12552305

申请日：2009-09-02

申请人： Kunihiko Fukuchi ,  Gen Fujii ,  Osamu Nakamura ,  Shinji Maekawa

发明人： Kunihiko Fukuchi ,  Gen Fujii ,  Osamu Nakamura ,  Shinji Maekawa

IPC分类号： H01L21/00

CPC分类号： H01L29/78678 ,  C25D5/022 ,  G02F2001/136295 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78696 ,  H01L51/56 ,  H01L2224/73204 ,  H01L2224/73265

摘要： According to one aspect of the present invention, at least one or more of patterns required for manufacturing a display device, such as a conductive layer which forms a wiring or an electrode and a mask, is formed by a droplet discharging method. At that time, a portion of the gate insulating film where is not located under the semiconductor layer is removed during manufacturing steps of the present invention.

摘要翻译： 根据本发明的一个方面，通过液滴喷射法形成制造显示装置所需的至少一种或多种图案，例如形成布线的导电层或电极和掩模。 此时，在本发明的制造工序中，除去不在半导体层下方的栅极绝缘膜的一部分。

公开(公告)号：US07601994B2

公开(公告)日：2009-10-13

申请号：US10576819

申请日：2004-11-05

申请人： Kunihiko Fukuchi ,  Gen Fujii ,  Osamu Nakamura ,  Shinji Maekawa

发明人： Kunihiko Fukuchi ,  Gen Fujii ,  Osamu Nakamura ,  Shinji Maekawa

IPC分类号： H01L27/10

CPC分类号： H01L29/78678 ,  C25D5/022 ,  G02F2001/136295 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78696 ,  H01L51/56 ,  H01L2224/73204 ,  H01L2224/73265

摘要： According to one aspect of the present invention, at least one or more of patterns required for manufacturing a display device, such as a conductive layer which forms a wiring or an electrode and a mask, is formed by a droplet discharging method. At that time, a portion of the gate insulating film where is not located under the semiconductor layer is removed during manufacturing steps of the present invention.

摘要翻译： 根据本发明的一个方面，通过液滴喷射法形成制造显示装置所需的至少一种或多种图案，例如形成布线的导电层或电极和掩模。 此时，在本发明的制造工序中，除去不在半导体层下方的栅极绝缘膜的一部分。

公开(公告)号：US20070057258A1

公开(公告)日：2007-03-15

申请号：US10576819

申请日：2004-11-05

申请人： Kunihiko Fukuchi ,  Gen Fujii ,  Osamu Nakamura ,  Shinji Maekawa

发明人： Kunihiko Fukuchi ,  Gen Fujii ,  Osamu Nakamura ,  Shinji Maekawa

IPC分类号： H01L29/04

CPC分类号： H01L29/78678 ,  C25D5/022 ,  G02F2001/136295 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78696 ,  H01L51/56 ,  H01L2224/73204 ,  H01L2224/73265

摘要： According to one aspect of the present invention, at least one or more of patterns required for manufacturing a display device, such as a conductive layer which forms a wiring or an electrode and a mask, is formed by a droplet discharging method. At that time, a portion of the gate insulating film where is not located under the semiconductor layer is removed during manufacturing steps of the present invention.

摘要翻译： 根据本发明的一个方面，通过液滴喷射法形成制造显示装置所需的至少一种或多种图案，例如形成布线的导电层或电极和掩模。 此时，在本发明的制造工序中，除去不在半导体层下方的栅极绝缘膜的一部分。

公开(公告)号：US07709844B2

公开(公告)日：2010-05-04

申请号：US11480429

申请日：2006-07-05

申请人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

发明人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

IPC分类号： H01L27/14

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/42384

摘要： A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400-700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 μm wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.

摘要翻译： 一种半导体器件及其制造方法，所述半导体器件具有新的电极结构，其具有低电阻率并且在400℃及以上的温度下经受热处理。 由于布线由具有高耐热性的Ta膜或Ta基膜制成，所以可以在高温（400-700℃）下进行热处理。 该热处理允许在晶体硅膜中吸收金属元素。 由于该热处理低于栅极布线（0.1-5μm宽）承受的温度，栅极布线被保护膜保护，所以栅极布线保持其低电阻。

公开(公告)号：US20060278878A1

公开(公告)日：2006-12-14

申请号：US11480429

申请日：2006-07-05

申请人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

发明人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

IPC分类号： H01L29/04

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/42384

摘要： A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400-700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 μm wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.

摘要翻译： 一种半导体器件及其制造方法，所述半导体器件具有新的电极结构，其具有低电阻率并且在400℃及以上的温度下经受热处理。 由于布线由具有高耐热性的Ta膜或Ta基膜制成，所以可以在高温（400-700℃）下进行热处理。 该热处理允许在晶体硅膜中吸收金属元素。 由于该热处理低于栅极布线（宽度为0.1-5μm）耐受并且栅极布线被保护膜保护的温度，所以栅极布线保持其低电阻。

公开(公告)号：US20060151314A1

公开(公告)日：2006-07-13

申请号：US11373273

申请日：2006-03-13

申请人： Kunihiko Fukuchi ,  Akihiko Koura ,  Tetsunori Maruyama ,  Toru Takayama

发明人： Kunihiko Fukuchi ,  Akihiko Koura ,  Tetsunori Maruyama ,  Toru Takayama

IPC分类号： C23C14/00

CPC分类号： H01J37/3429 ,  C23C14/34 ,  C23C14/564

摘要： It is an object to provide a sputtering system that enables forming a high-quality thin film including no impurity, and it is also an object of the present invention to provide a method for manufacturing a high-quality thin film with the sputtering system. The present invention provides a sputtering system including a target material and a part coated with a spray material including the same material as the target material. The present invention also provides a method for manufacturing a thin film including one of a target material, oxide of the target material, and nitride of the target material, which includes preparing a sputtering system including the target material and a part coated with a spray material including the same material as the target material, and applying high-frequency power in an atmosphere including rare gas.

摘要翻译： 本发明的目的是提供一种能够形成不含杂质的高质量薄膜的溅射系统，本发明的目的还在于提供一种利用溅射系统制造高品质薄膜的方法。 本发明提供一种溅射系统，其包括目标材料和涂覆有包含与靶材料相同的材料的喷涂材料的部分。 本发明还提供一种制造薄膜的方法，该薄膜包括目标材料，目标材料的氧化物和目标材料的氮化物中的一种，其包括制备包括目标材料的溅射系统和涂覆有喷涂材料的部分 包括与目标材料相同的材料，以及在包括稀有气体的气氛中施加高频功率。

公开(公告)号：US20050037614A1

公开(公告)日：2005-02-17

申请号：US10911815

申请日：2004-08-05

申请人： Kunihiko Fukuchi

发明人： Kunihiko Fukuchi

IPC分类号： H01L21/288 ,  H01L21/768 ,  H01L21/77 ,  H01L21/84 ,  H05K3/40 ,  H05K3/46 ,  H01L21/76 ,  H01L21/44

CPC分类号： H01L21/76885 ,  H01L21/288 ,  H01L27/1292 ,  H05K3/4069 ,  H05K3/4647 ,  H05K2203/013

摘要： The present invention provides a method for manufacturing a wiring and a method for manufacturing a semiconductor device, which do not require a photolithography step in connecting a pattern of an upper layer and a pattern of a lower layer. According to the present invention, a composition including a conductive material is discharged locally and an electric conductor to function as a pillar is formed on a first pattern over a substrate, an insulator is formed to cover the electric conductor, the insulator is etched to expose a top surface of the electric conductor, and a second pattern is formed on the top surface of electric conductor that is exposed.

摘要翻译： 本发明提供一种布线的制造方法以及半导体器件的制造方法，其不需要光刻工序来连接上层的图案和下层的图案。 根据本发明，包括导电材料的组合物被局部放电，并且在基板上的第一图案上形成用作柱的电导体，形成绝缘体以覆盖电导体，绝缘体被蚀刻以暴露 电导体的顶表面，并且在暴露的导电体的顶表面上形成第二图案。