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    Fuel cell electric power generating system and method of stopping fuel cell electric power generation
    3.
    发明授权
    Fuel cell electric power generating system and method of stopping fuel cell electric power generation 有权
    燃料电池发电系统及燃料电池发电停止方法

    公开(公告)号：US07432004B2

    公开(公告)日：2008-10-07

    申请号：US10130468

    申请日：2001-06-12

    申请人： Tetsuya Ueda ,  Takeshi Tomizawa ,  Kunihiro Ukai

    发明人： Tetsuya Ueda ,  Takeshi Tomizawa ,  Kunihiro Ukai

    IPC分类号： H01M8/04

    CPC分类号： H01M8/04231 ,  H01M8/04022 ,  H01M8/04223 ,  H01M8/04303 ,  H01M8/0612 ,  H01M8/0668 ,  H01M8/0675

    摘要： A fuel cell electric power generating system is provided which does not occupy a large space, which requires a lower initial cost for equipment than the prior art, and of which the running cost is low. The system includes a reformer producing hydrogen-rich gas by utilizing a source gas, source gas supplying means of supplying the source gas to the reformer, air supplying means of supplying purging air to the reformer, and a fuel cell generating electric power by utilizing the hydrogen-rich gas produced at the reformer and air for electric power generation supplied from outside, wherein in stopping the operation of the fuel cell, the supply of the source gas to the reformer is stopped and the hydrogen-rich gas remaining within the fuel cell electric power generating system, steam and the purging air are passed in this order.

    摘要翻译： 提供了不占用大空间的燃料电池发电系统，这需要比现有技术更低的设备初始成本，并且运行成本低。 该系统包括通过利用源气体产生富氢气体的重整器，向重整器供应源气体的源气供给装置，向重整器供给净化空气的空气供给装置以及利用 在重整器中产生的富氢气体和从外部供给的用于发电的空气，其中在停止燃料电池的运行时，停止向重整器供应源气体，并且残留在燃料电池内的富氢气体 发电系统，蒸汽和净化空气按顺序通过。

    Hydrogen generating apparatus, method of operating hydrogen generating apparatus, fuel cell system, and method of operating fuel cell system
    4.
    发明申请
    Hydrogen generating apparatus, method of operating hydrogen generating apparatus, fuel cell system, and method of operating fuel cell system 审中-公开
    氢发生装置，操作氢气发生装置的方法，燃料电池系统和操作燃料电池系统的方法

    公开(公告)号：US20070101647A1

    公开(公告)日：2007-05-10

    申请号：US10579748

    申请日：2005-01-14

    申请人： Shinji Miyauchi ,  Terumaru Harada ,  Kunihiro Ukai ,  Kiyoshi Taguchi ,  Seiji Fujihara ,  Tetsuya Ueda

    发明人： Shinji Miyauchi ,  Terumaru Harada ,  Kunihiro Ukai ,  Kiyoshi Taguchi ,  Seiji Fujihara ,  Tetsuya Ueda

    IPC分类号： C01B3/32

    CPC分类号： C01B3/48 ,  C01B2203/0233 ,  C01B2203/0283 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/0805 ,  C01B2203/1619 ,  H01M8/0612

    摘要： A hydrogen generating apparatus or the like is able to detect an excess water state or an excess steam state in the interior of a shift converter or a selective oxidation device. The hydrogen generating apparatus (120) comprise a hydrogen generator (118) including a reformer (100) configured to generate a reformed gas from a material and steam; a shift converter (103) configured to cause the reformed gas supplied from the reformer (100) to be subjected to a shift reaction; and a selective oxidation device (105) configured to decrease a concentration of carbon monoxide in the reformed gas after the shift reaction to a predetermined concentration or less; a temperature sensor (116, 117) configured to detect one of a temperature of the shift converter (103) and a temperature of the selective oxidation device (105); and a controller (205) configured to determine that excess water or excess steam exists in an interior of the hydrogen generator (118) when an increasing rate of the temperature detected by the temperature sensor is less than a predetermined threshold.

    摘要翻译： 氢生成装置等能够检测位移转换器或选择氧化装置的内部的过量水分状态或过量蒸气状态。 氢生成装置（120）包括氢生成器（118），其包括重构器（100），其被配置为从材料和蒸汽产生重整气体; 移位转换器，被配置为使从所述重整器供给的重整气体经受变换反应; 以及选择性氧化装置（105），其将所述转化反应后的重整气体中的一氧化碳浓度降低至规定浓度以下; 配置为检测所述移位转换器（103）的温度和所述选择氧化装置（105）的温度之一的温度传感器（116,117）。 以及控制器（205），其被配置为当由所述温度传感器检测到的温度的增加速率小于预定阈值时，确定所述氢生成器（118）的内部存在过量的水或过量蒸汽。

    Three-dimensional metamaterial having function of allowing and inhibiting propagation of electromagnetic waves
    5.
    发明授权
    Three-dimensional metamaterial having function of allowing and inhibiting propagation of electromagnetic waves 有权
    具有允许和禁止电磁波传播的功能的三维超材料

    公开(公告)号：US08669833B2

    公开(公告)日：2014-03-11

    申请号：US13375945

    申请日：2010-06-03

    申请人： Tetsuya Ueda

    发明人： Tetsuya Ueda

    IPC分类号： H01P1/205 ,  H01P7/10

    CPC分类号： H01P7/10 ,  G02B1/002 ,  G02B5/3058 ,  H01P1/20 ,  H01P1/2084

    摘要： In a metamaterial, a dielectric layer includes a host medium and dielectric bodies disposed in rows with predetermined intervals therebetween is sandwiched between a pair of conductive mesh plates each having holes, thereby forming a functional layer including dielectric resonators corresponding to the dielectric bodies. The metamaterial is configured by laminating the functional layers. The holes and the dielectric resonators are positioned coaxially and an electromagnetic wave is propagated in each of the functional layers in a propagation direction perpendicular to a multi-layered laminate surface such that the metamaterial function as a left-handed metamaterial in relation to the propagation direction perpendicular to the multi-layered surface.

    摘要翻译： 在超材料中，电介质层包括主介体，并且以一定间隔设置成行的电介质体夹在一对具有孔的导电网板之间，从而形成包括对应于介电体的介电谐振器的功能层。 超材料通过层压功能层而构成。 孔和介质谐振器同轴地定位，并且电磁波在垂直于多层叠层表面的传播方向上在每个功能层中传播，使得超材料相对于传播方向作为左旋超材料 垂直于多层表面。

    Transmission line microwave apparatus including at least one non-reciprocal transmission line part between two parts
    6.
    发明授权
    Transmission line microwave apparatus including at least one non-reciprocal transmission line part between two parts 有权
    传输线微波装置包括两部分之间的至少一个不可逆传输线部分

    公开(公告)号：US08294538B2

    公开(公告)日：2012-10-23

    申请号：US12530102

    申请日：2008-03-05

    申请人： Tetsuya Ueda

    发明人： Tetsuya Ueda

    IPC分类号： H01P3/08

    CPC分类号： H01Q1/38 ,  H01P1/203 ,  H01P1/207 ,  H01P1/32 ,  H01Q13/206

    摘要： A transmission line microwave apparatus includes at least one nonreciprocal transmission line part, which includes a series branch circuit equivalently including a capacitive element and a shunt branch circuit equivalently including an inductive element. The nonreciprocal transmission line part has gyrotropic characteristic by being magnetized in a magnetization direction different from the propagation direction of a microwave, and has an asymmetric structure to a plane formed by the propagation direction and the magnetization direction. The nonreciprocal transmission line part has a propagation constant and an operating frequency set in a dispersion curve that represents a relation between the propagation constant and the operating frequency so that the propagation constant in the forward direction and the propagation constant in the backward direction have nonreciprocal phase characteristics different from each other. A microwave transmission line is constituted by cascade-connecting at least one non-reciprocal transmission line part between first and second ports.

    摘要翻译： 传输线微波装置包括至少一个不可逆传输线部分，其包括等效地包括电容元件的串联分支电路和等效地包括电感元件的分流分支电路。 不可逆传输线部分通过在与微波的传播方向不同的磁化方向上磁化而具有陀螺特性，并且具有与由传播方向和磁化方向形成的平面不对称的结构。 不可逆传输线部分具有传播常数和在表示传播常数与工作频率之间的关系的色散曲线中设定的工作频率，使得正向传播常数和反向传播常数具有非相互相位 特征彼此不同。 微波传输线通过级联连接第一和第二端口之间的至少一个不可逆传输线部分而构成。

    Method for fabricating semiconductor device and semiconductor device
    7.
    发明授权
    Method for fabricating semiconductor device and semiconductor device 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号：US08034707B2

    公开(公告)日：2011-10-11

    申请号：US12897416

    申请日：2010-10-04

    申请人： Tetsuya Ueda

    发明人： Tetsuya Ueda

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76801 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A method for fabricating a semiconductor device includes the steps of forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一绝缘膜中间隔地形成多个下互连; 去除位于下互连之间的第一绝缘膜的一部分，从而形成互连互连间隙; 在所述第一绝缘膜上形成第二绝缘膜，其中所述下互连和互连互连间隙形成为使得从所述互连互连间隙形成气隙; 以及在所述第二绝缘膜中形成连接到所述下部互连中的一个的连接部分和连接到所述连接部分的上部互连件。 连接部分形成为连接到不邻近气隙的下互连中的一个。

    Semiconductor device with a low dielectric constant film between lower interconnections
    8.
    发明授权
    Semiconductor device with a low dielectric constant film between lower interconnections 有权
    在低互连之间具有低介电常数膜的半导体器件

    公开(公告)号：US07622807B2

    公开(公告)日：2009-11-24

    申请号：US12277933

    申请日：2008-11-25

    申请人： Tetsuya Ueda

    发明人： Tetsuya Ueda

    IPC分类号： H01L29/40

    CPC分类号： H01L21/76801 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： A method for fabricating a semiconductor device includes the steps of: forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一绝缘膜中间隔地形成多个下互连; 去除位于下互连之间的第一绝缘膜的一部分，从而形成互连互连间隙; 在所述第一绝缘膜上形成第二绝缘膜，其中所述下互连和互连互连间隙形成为使得从所述互连互连间隙形成气隙; 以及在所述第二绝缘膜中形成连接到所述下部互连中的一个的连接部分和连接到所述连接部分的上部互连件。 连接部分形成为连接到不邻近气隙的下互连中的一个。

    Semiconductor device and method for fabricating the same
    9.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07265450B2

    公开(公告)日：2007-09-04

    申请号：US10900272

    申请日：2004-07-28

    申请人： Takato Handa ,  Hiroyuki Umimoto ,  Tetsuya Ueda

    发明人： Takato Handa ,  Hiroyuki Umimoto ,  Tetsuya Ueda

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76843 ,  H01L21/76801 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An inventive semiconductor device includes: a lower interlayer dielectric film provided on a substrate; a lower interconnect made up of a lower barrier metal layer formed along a wall surface of a lower interconnect groove in the lower interlayer dielectric film, and a copper film; and an upper plug and an upper interconnect. The upper plug passes through a silicon nitride film and comes into contact with the copper film of the lower interconnect. The lower interconnect is provided with a large number of convex portions buried in concave portions of the lower interconnect groove. Thus, voids in the lower interconnect are also gettered by the convex portions. Accordingly, the concentration of voids in the contact area between the lower interconnect and the upper plug is relieved, and an increase in contact resistance is suppressed.

    摘要翻译： 本发明的半导体器件包括：设置在基板上的下层间绝缘膜; 由沿下层间电介质膜的下互连槽的壁面形成的下阻挡金属层和铜膜构成的下互连件; 以及上部插头和上部互连件。 上塞通过氮化硅膜并与下互连的铜膜接触。 下部互连件设置有埋在下部互连槽的凹部中的大量凸部。 因此，下部互连件中的空隙也被凸起部分吸收。 因此，下部布线和上部插塞之间的接触区域中的空隙的浓度被释放，并且抑制了接触电阻的增加。