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公开(公告)号：US20110197957A1
公开(公告)日：2011-08-18
申请号：US13124384
申请日：2009-10-09
IPC分类号： H01L31/06 , H01L31/0352
CPC分类号： H01L31/076 , H01L31/077 , H01L31/078 , Y02E10/548
摘要： A method for manufacturing a silicon-based thin film solar cell including a crystalline silicon photoelectric conversion unit which contains a p-type layer (4p), a crystalline i-type silicon photoelectric conversion layer (4ic), and an n-type layer (4nc) stacked in this order from a transparent substrate side is provided. In one example, an n-type silicon-based thin film layer (4na) is formed on the crystalline i-type silicon photoelectric conversion layer (4ic), there is formed an the n-type silicon-based thin film layer (4na) having an n-type silicon alloy layer having a film thickness of 1-12 nm and being in contact with the crystalline i-type silicon photoelectric conversion layer.
摘要翻译： 一种制造硅基薄膜太阳能电池的方法，该硅系薄膜太阳能电池包括含有p型层（4p），晶体i型硅光电转换层（4ic）和n型层（4）的晶体硅光电转换单元， 4nc）从透明基板侧依次层叠。 在一个实例中，在晶体i型硅光电转换层（4ic）上形成n型硅基薄膜层（4na），形成n型硅基薄膜层（4na） 具有膜厚度为1-12nm并与晶体i型硅光电转换层接触的n型硅合金层。
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公开(公告)号：US20110315190A1
公开(公告)日：2011-12-29
申请号：US13254446
申请日：2010-02-19
CPC分类号： H01L31/078 , H01L31/03921 , H01L31/03923 , H01L31/0465 , Y02E10/541 , Y02P70/521
摘要： Provided is a thin film solar cell module including series-connected unit cells, wherein a thin film silicon photoelectric conversion unit and a compound semiconductor-containing photoelectric conversion unit are electrically connected in each unit cell. Each unit cell includes at least a transparent electrode, an amorphous silicon-containing photoelectric conversion unit, an intermediate transparent electrode layer, a photoelectric conversion unit, a compound semiconductor-based photoelectric conversion unit, and a metal electrode in this order from the light incident side. In each of the unit cells, the photoelectric conversion unit and the compound semiconductor-based photoelectric conversion unit are connected in series to form a series-connected component. The series-connected component is connected to a first photoelectric conversion unit in parallel via the transparent electrode and the intermediate transparent electrode layer.
摘要翻译： 提供一种薄膜太阳能电池模块，其包括串联连接的单元电池，其中薄膜硅光电转换单元和含化合物半导体的光电转换单元在每个单元电池中电连接。 每个单电池至少包括透明电极，非晶含硅光电转换单元，中间透明电极层，光电转换单元，化合物半导体基光电转换单元和金属电极，从光入射 侧。 在每个单元电池中，光电转换单元和基于化合物半导体的光电转换单元串联连接以形成串联元件。 串联部件通过透明电极和中间透明电极层并联连接到第一光电转换单元。
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公开(公告)号：US09166089B2
公开(公告)日：2015-10-20
申请号：US13254446
申请日：2010-02-19
IPC分类号： H01L31/05 , H01L31/078 , H01L31/0392 , H01L31/0465
CPC分类号： H01L31/078 , H01L31/03921 , H01L31/03923 , H01L31/0465 , Y02E10/541 , Y02P70/521
摘要： Provided is a thin film solar cell module including series-connected unit cells, wherein a thin film silicon photoelectric conversion unit and a compound semiconductor-containing photoelectric conversion unit are electrically connected in each unit cell. Each unit cell includes at least a transparent electrode, an amorphous silicon-containing photoelectric conversion unit, an intermediate transparent electrode layer, a photoelectric conversion unit, a compound semiconductor-based photoelectric conversion unit, and a metal electrode in this order from the light incident side. In each of the unit cells, the photoelectric conversion unit and the compound semiconductor-based photoelectric conversion unit are connected in series to form a series-connected component. The series-connected component is connected to a first photoelectric conversion unit in parallel via the transparent electrode and the intermediate transparent electrode layer.
摘要翻译： 提供一种薄膜太阳能电池模块，其包括串联连接的单元电池，其中薄膜硅光电转换单元和含化合物半导体的光电转换单元在每个单元电池中电连接。 每个单电池至少包括透明电极，非晶含硅光电转换单元，中间透明电极层，光电转换单元，化合物半导体基光电转换单元和金属电极，从光入射 侧。 在每个单元电池中，光电转换单元和基于化合物半导体的光电转换单元串联连接以形成串联元件。 串联部件通过透明电极和中间透明电极层并联连接到第一光电转换单元。
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公开(公告)号：US08530267B2
公开(公告)日：2013-09-10
申请号：US13124384
申请日：2009-10-09
IPC分类号： H01L21/00
CPC分类号： H01L31/076 , H01L31/077 , H01L31/078 , Y02E10/548
摘要： A method for manufacturing a silicon-based thin film solar cell including a crystalline silicon photoelectric conversion unit which contains a p-type layer (4p), a crystalline i-type silicon photoelectric conversion layer (4ic), and an n-type layer (4nc) stacked in this order from a transparent substrate side is provided. In one example, an n-type silicon-based thin film layer (4na) is formed on the crystalline i-type silicon photoelectric conversion layer (4ic), the n-type silicon-based thin film layer (4na) having an n-type silicon alloy layer having a film thickness of 1-12 nm and being in contact with the crystalline i-type silicon photoelectric conversion layer.
摘要翻译： 一种制造硅基薄膜太阳能电池的方法，该硅系薄膜太阳能电池包括含有p型层（4p），晶体i型硅光电转换层（4ic）和n型层（4）的晶体硅光电转换单元， 4nc）从透明基板侧依次层叠。 在一个实例中，在晶体i型硅光电转换层（4ic）上形成n型硅基薄膜层（4na），n型硅基薄膜层（4na） 并且与晶体i型硅光电转换层接触，形成膜厚度为1-12nm的硅合金层。
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5.发明授权Thin film photoelectric conversion device having a stacked transparent oxide and carbon intermediate layer 有权具有堆叠的透明氧化物和碳中间层的薄膜光电转换装置公开(公告)号：US08410355B2
公开(公告)日：2013-04-02
申请号：US12740338
申请日：2008-10-30
申请人： Tomomi Meguro , Mitsuru Ichikawa , Fumiyasu Sezaki , Kunta Yoshikawa , Takashi Kuchiyama , Kenji Yamamoto
发明人： Tomomi Meguro , Mitsuru Ichikawa , Fumiyasu Sezaki , Kunta Yoshikawa , Takashi Kuchiyama , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/02168 , H01L31/022466 , H01L31/056 , H01L31/075 , H01L31/077 , H01L31/078 , H01L31/1804 , H01L31/202 , Y02E10/52 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.
摘要翻译： 本发明旨在开发一种形成具有优异光学特性的中间层的技术，并提供具有高转换效率的光电转换装置。 为了实现这一目的，在本发明的薄膜光电转换装置中形成了通过中间层的串联连接，并且中间层是其前表面的透明氧化物层，并且在其间堆叠有n对层（n是整数） 为1以上），其中，所述一对层中的每一层为依次层叠的碳层和透明氧化物层。 优化每个层的膜厚度以在保持串联电阻的同时提高波长选择性和抗应力。
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公开(公告)号：US20100243058A1
公开(公告)日：2010-09-30
申请号：US12740338
申请日：2008-10-30
申请人： Tomomi Meguro , Mitsuru Ichikawa , Fumiyasu Sezaki , Kunta Yoshikawa , Takashi Kuchiyama , Kenji Yamamoto
发明人： Tomomi Meguro , Mitsuru Ichikawa , Fumiyasu Sezaki , Kunta Yoshikawa , Takashi Kuchiyama , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/02168 , H01L31/022466 , H01L31/056 , H01L31/075 , H01L31/077 , H01L31/078 , H01L31/1804 , H01L31/202 , Y02E10/52 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.An embodiment of the photoelectric conversion device is characterized in that; a transparent insulating substrate is located on the light incidence side, and a transparent conductive layer, at least one photoelectric conversion unit, a transparent electrode layer having electrical conductivity as typified by zinc oxide, a hard carbon layer having electrical conductivity as typified by diamond-like carbon, and a high reflecting electrode layer are stacked in this order on an opposite surface from a light incidence side of the transparent insulating substrate.
摘要翻译： 本发明旨在开发一种形成具有优异光学特性的中间层的技术，并提供具有高转换效率的光电转换装置。 为了实现这一目的，在本发明的薄膜光电转换装置中形成了通过中间层的串联连接，并且中间层是其前表面的透明氧化物层，并且在其间堆叠有n对层（n是整数） 为1以上），其中，所述一对层中的每一层为依次层叠的碳层和透明氧化物层。 优化每个层的膜厚度以在保持串联电阻的同时提高波长选择性和抗应力。 光电转换装置的一个实施例的特征在于： 透明绝缘基板位于光入射侧，透明导电层，至少一个光电转换单元，以氧化锌为代表的导电性的透明电极层，以金刚石为代表的导电性的硬碳层， 在与透明绝缘性基板的光入射侧相反的面上依次层叠高反射电极层。
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公开(公告)号：US20060043517A1
公开(公告)日：2006-03-02
申请号：US10530283
申请日：2004-07-15
IPC分类号： H01L31/105
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
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8.发明授权Transparent electroconductive oxide layer and photoelectric converter using the same 失效透明导电氧化物层和使用其的光电转换器公开(公告)号：US08518833B2
公开(公告)日：2013-08-27
申请号：US12921657
申请日：2009-03-13
IPC分类号： H01L21/31
CPC分类号： H01M14/005 , H01L31/022466 , H01L31/022483 , H01L31/03921 , Y02E10/50 , Y10T428/265 , Y10T428/31678
摘要： The present invention provides a transparent electroconductive oxide layer having a high transmittance and a high electroconductivity and further a thin-film photoelectric converter having a high photoelectric conversion efficiency by applying the transparent electroconductive oxide layer to a transparent electrode layer of a photoelectric converter. The transparent electroconductive oxide layer in the present invention is deposited on a transparent substrate with a first and a second impurities contained in the transparent electroconductive oxide layer, especially in the vicinity of a surface of the layer in a higher concentration, and carbon atoms contained in the vicinity of the surface of the layer, thereby achieving a high transmittance and a high electroconductivity simultaneously and thus solving the problem.
摘要翻译： 本发明通过将透明导电氧化物层施加到光电转换器的透明电极层，提供了具有高透射率和高导电性的透明导电氧化物层，并且还提供了具有高光电转换效率的薄膜光电转换器。 本发明中的透明导电氧化物层沉积在透明基板上，其中第一和第二杂质包含在透明导电氧化物层中，特别是在较高浓度的层的表面附近，并且包含在 层的表面附近，从而同时实现高透射率和高导电性，从而解决问题。
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公开(公告)号：US08691613B2
公开(公告)日：2014-04-08
申请号：US13877148
申请日：2011-08-31
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L31/0684 , H01L31/0747 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A crystalline-based silicon photoelectric conversion device comprises: an intrinsic silicon-based layer and a silicon-based layer of a first conductivity type, on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the silicon substrate. At least one of forming the intrinsic silicon-based layer of the first conductivity type layer-side forming the intrinsic silicon-based layer of the opposite conductivity type layer-side includes: forming a first intrinsic silicon-based thin-film layer having a thickness of 1-10 nm on the silicon substrate; plasma-treating the silicon substrate in a gas containing mainly hydrogen; and forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film.
摘要翻译： 晶体硅光电转换装置包括：在第一导电类型的单晶硅衬底的一个表面上的本征硅基层和第一导电类型的硅基层; 以及相反导电类型的本征硅基和硅基层，依次在硅衬底的另一表面上。 形成形成相反导电型层侧的本征硅基层的第一导电型层侧的本征硅基层中的至少一个包括：形成具有厚度的第一本征硅基薄膜层 在硅衬底上为1-10nm; 在主要包含氢气的气体中等离子体处理硅衬底; 以及在所述第一本征硅基薄膜上形成第二本征硅基薄膜层。
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公开(公告)号：US20130210185A1
公开(公告)日：2013-08-15
申请号：US13877148
申请日：2011-08-31
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/0684 , H01L31/0747 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A crystalline-based silicon photoelectric conversion device comprises: an intrinsic silicon-based layer and a silicon-based layer of a first conductivity type, on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the silicon substrate. At least one of forming the intrinsic silicon-based layer of the first conductivity type layer-side forming the intrinsic silicon-based layer of the opposite conductivity type layer-side includes: forming a first intrinsic silicon-based thin-film layer having a thickness of 1-10 nm on the silicon substrate; plasma-treating the silicon substrate in a gas containing mainly hydrogen; and forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film.
摘要翻译： 晶体硅光电转换装置包括：在第一导电类型的单晶硅衬底的一个表面上的本征硅基层和第一导电类型的硅基层; 以及相反导电类型的本征硅基和硅基层，依次在硅衬底的另一表面上。 形成形成相反导电型层侧的本征硅基层的第一导电型层侧的本征硅基层中的至少一个包括：形成具有厚度的第一本征硅基薄膜层 在硅衬底上为1-10nm; 在主要包含氢气的气体中等离子体处理硅衬底; 以及在所述第一本征硅基薄膜上形成第二本征硅基薄膜层。
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