Structure Of Low Noise Saw And Low Noise Diamond Saw
    1.
    发明申请
    Structure Of Low Noise Saw And Low Noise Diamond Saw 审中-公开
    低噪声锯和低噪声钻石锯结构

    公开(公告)号:US20090071309A1

    公开(公告)日:2009-03-19

    申请号:US11994388

    申请日:2006-12-06

    摘要: Disclosed is a diamond saw capable of reducing noise by installing a damper for absorbing vibration in a shank. The low noise diamond saw comprises: a shank formed of a circular metallic plate; and a diamond blade bonded to an outer circumferential surface of the shank, in which a damper is partially bonded to one or both of upper and lower surfaces of the shank by a spot welding. Said one or both of the upper and lower surfaces of the shank may be provided with recesses having a thickness enough for an uppermost portion of the damper not to be higher than an uppermost portion of the diamond blade According to another embodiment of the present invention, a low noise diamond saw comprises: a shank formed of a circular metallic plate; and a diamond blade bonded to an outer circumferential surface of the shank, in which a plurality of recesses having a predetermined depth are formed in upper and lower surfaces of the shank in correspondence with each other in a circumferential direction, a hole having a diameter smaller than that of the recess is formed in the recess, and a damper is mounted in the hole so that a clearance may not be generated between a surface of the recess and a surface of the damper. In the diamond saw, noise is reduced as the number of the dampers is increased.

    摘要翻译: 公开了一种能够通过安装用于吸收柄部振动的阻尼器来降低噪音的金刚石锯。 低噪声金刚石锯包括:由圆形金属板形成的柄; 以及结合到所述柄的外周面的金刚石刀片,其中阻尼器通过点焊部分地接合到所述柄的上表面和下表面中的一个或两个。 所述杆的上表面和下表面中的一个或两个可以设置有具有足以使阻尼器的最上部分的厚度的凹槽不要高于金刚石刀片的最上部。根据本发明的另一个实施例, 低噪声金刚石锯包括:由圆形金属板形成的柄; 以及金刚石刀片,其结合到所述柄的外周面,其中,具有预定深度的多个凹部沿圆周方向彼此对应地形成在所述柄的上表面和下表面中,所述孔的直径较小 凹部形成在凹部中,并且阻尼器安装在孔中,使得在凹部的表面和阻尼器的表面之间不会产生间隙。 在金刚石锯中,随着阻尼器数量的增加,噪音减小。

    DAMPING STRUCTURE
    3.
    发明申请
    DAMPING STRUCTURE 审中-公开
    阻尼结构

    公开(公告)号:US20090126289A1

    公开(公告)日:2009-05-21

    申请号:US12264378

    申请日:2008-11-04

    IPC分类号: E04B1/98

    CPC分类号: F16F7/104 F16F7/10

    摘要: The present invention relates to a damping structure which is capable effectively damping vibration of a structure. The damping structure includes a vibration controlling medium fixed at a structure and vibrating with an amplitude greater than that of the structure upon vibration and a damper vibrating separately from the vibration controlling medium as a result of being loosely fitted into the vibration controlling medium or a damper supporter extended therefrom, and thus having a vibration frequency different from that of the vibration controlling medium.

    摘要翻译: 本发明涉及能够有效地抑制结构的振动的阻尼结构。 阻尼结构包括固定在结构上的振动控制介质,其振动幅度大于振动时的结构的振幅,并且由于松动地配合到振动控制介质或阻尼器中而与振动控制介质分开振动的阻尼器振动 从而具有与振动控制介质的振动频率不同的振动频率。

    Shrink fitting method including deformation
    4.
    发明授权
    Shrink fitting method including deformation 有权
    收缩方法包括变形

    公开(公告)号:US07774916B2

    公开(公告)日:2010-08-17

    申请号:US11555525

    申请日:2006-11-01

    IPC分类号: B23P11/00 B23P11/02 F16B4/00

    摘要: A new shrink fitting method including deformation is disclosed, in which a high bonding force can be obtained without accurate mechanical process such as forming an insertion body having an outer diameter greater than an inner diameter of an object for receiving the insertion body. The shrink fitting method comprises preparing a pipe and a rod material whose inner and outer diameters are different from each other; bonding the pipe and the rod material to each other in a state that the pipe or the rod material is deformed by heating; deforming the pipe to allow the inner diameter of the pipe to be equal to the outer diameter of the rod material; and cooling the bonded pipe and rod material. The shrink fitting method can be widely used for various mechanical parts.

    摘要翻译: 公开了一种包括变形的新的收缩配合方法,其中可以在没有精确的机械处理(例如形成具有大于用于接收插入体的物体的内径的外径)的插入体的情况下获得高的接合力。 收缩配合方法包括制备内径和外径彼此不同的管和杆材料; 在管或棒材通过加热而变形的状态下将管和棒材彼此接合; 使管道变形以允许管道的内径等于杆材料的外径; 并冷却粘合的管和杆材料。 收缩配合方法可广泛用于各种机械零件。

    SHRINK FITTING METHOD INCLUDING DEFORMATION
    5.
    发明申请
    SHRINK FITTING METHOD INCLUDING DEFORMATION 有权
    收缩配合方法,包括变形

    公开(公告)号:US20070107188A1

    公开(公告)日:2007-05-17

    申请号:US11555525

    申请日:2006-11-01

    IPC分类号: B23P11/02

    摘要: A new shrink fitting method including deformation is disclosed, in which a high bonding force can be obtained without accurate mechanical process such as forming an insertion body having an outer diameter greater than an inner diameter of an object for receiving the insertion body. The shrink fitting method comprises preparing a pipe and a rod material whose inner and outer diameters are different from each other; bonding the pipe and the rod material to each other in a state that the pipe or the rod material is deformed by heating; deforming the pipe to allow the inner diameter of the pipe to be equal to the outer diameter of the rod material; and cooling the bonded pipe and rod material. The shrink fitting method can be widely used for various mechanical parts.

    摘要翻译: 公开了一种包括变形的新的收缩配合方法,其中可以在没有精确的机械处理(例如形成具有大于用于接收插入体的物体的内径的外径)的插入体的情况下获得高的接合力。 收缩配合方法包括制备内径和外径彼此不同的管和杆材料; 在管或棒材通过加热而变形的状态下将管和棒材彼此接合; 使管道变形以允许管道的内径等于杆材料的外径; 并冷却粘合的管和杆材料。 收缩配合方法可广泛用于各种机械零件。

    Method and apparatus for plasma ion implantation of solid element
    6.
    发明授权
    Method and apparatus for plasma ion implantation of solid element 有权
    固体元素等离子体离子注入的方法和装置

    公开(公告)号:US09139902B2

    公开(公告)日:2015-09-22

    申请号:US13044621

    申请日:2011-03-10

    摘要: Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source. And, inductively coupled plasma may be generated in the vacuum chamber via antenna so as to increase ionization rate of a solid element and lower operation pressure of magnetron sputtering source.

    摘要翻译: 公开了固体元素的等离子体离子注入的装置和方法,其能够实现固体元素的等离子体离子注入。 根据该装置和方法,将样品放置在真空室中的样品台上,并将真空室的内部保持为真空状态。 并且,在真空室中供应气体,将第一脉冲DC功率施加到磁控溅射源,以产生固体元素的等离子体离子。 从源极溅射的固体元素的等离子体离子注入到样品的表面上。 第一功率是脉冲直流电力,能够在维持低平均功率的同时施加脉冲施加高功率。 并且,与施加第一脉冲功率同时,可以将第二功率提供给样品台,该样品台是将固体元素的等离子体离子加速至样品的高负电压脉冲,并与用于磁控溅射的脉冲直流电力同步 资源。 并且,可以通过天线在真空室中产生电感耦合等离子体,以增加固体元素的电离速率和降低磁控管溅射源的操作压力。

    METHOD AND APPARATUS FOR PLASMA ION IMPLANTATION OF SOLID ELEMENT
    7.
    发明申请
    METHOD AND APPARATUS FOR PLASMA ION IMPLANTATION OF SOLID ELEMENT 有权
    固体元素等离子体植入的方法与装置

    公开(公告)号:US20120228123A1

    公开(公告)日:2012-09-13

    申请号:US13044621

    申请日:2011-03-10

    IPC分类号: C23C14/48 C23C14/35

    摘要: Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element.According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source. And, inductively coupled plasma may be generated in the vacuum chamber via antenna so as to increase ionization rate of a solid element and lower operation pressure of magnetron sputtering source.

    摘要翻译: 公开了固体元素的等离子体离子注入的装置和方法,其能够实现固体元素的等离子体离子注入。 根据该装置和方法,将样品放置在真空室中的样品台上,并将真空室的内部保持为真空状态。 并且,在真空室中供应气体,将第一脉冲DC功率施加到磁控溅射源,以产生固体元素的等离子体离子。 从源极溅射的固体元素的等离子体离子注入到样品的表面上。 第一功率是脉冲直流电力,能够在维持低平均功率的同时施加脉冲施加高功率。 并且,与施加第一脉冲功率同时,可以将第二功率提供给样品台,该样品台是将固体元素的等离子体离子加速至样品的高负电压脉冲,并与用于磁控溅射的脉冲直流电力同步 资源。 并且,可以通过天线在真空室中产生电感耦合等离子体,以增加固体元素的电离速率和降低磁控管溅射源的操作压力。