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公开(公告)号：US20090001545A1
公开(公告)日：2009-01-01
申请号：US11772044
申请日：2007-06-29
申请人： KyungOe Kim , Taewoo Kang , HyunSu Shin
发明人： KyungOe Kim , Taewoo Kang , HyunSu Shin
CPC分类号： H01L23/49833 , H01F17/0006 , H01L23/49838 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2924/01019 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/16195 , H01L2924/19105 , H01L2924/00
摘要： An integrated circuit package system comprising: providing a package substrate; attaching an integrated circuit over the package substrate; and attaching a side substrate adjacent the integrated circuit over the package substrate.
摘要翻译： 一种集成电路封装系统，包括：提供封装衬底; 将集成电路连接在封装衬底上; 以及将与所述集成电路相邻的侧基板附接在所述封装基板上。
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2.发明授权公开(公告)号：US08018052B2
公开(公告)日：2011-09-13
申请号：US11772044
申请日：2007-06-29
申请人： KyungOe Kim , Taewoo Kang , HyunSu Shin
发明人： KyungOe Kim , Taewoo Kang , HyunSu Shin
CPC分类号： H01L23/49833 , H01F17/0006 , H01L23/49838 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2924/01019 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/16195 , H01L2924/19105 , H01L2924/00
摘要： An integrated circuit package system comprising: providing a package substrate; attaching an integrated circuit over the package substrate; and attaching a side substrate adjacent the integrated circuit over the package substrate.
摘要翻译： 一种集成电路封装系统，包括：提供封装衬底; 将集成电路连接在封装衬底上; 以及将与所述集成电路相邻的侧基板附接在所述封装基板上。
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3.发明申请Semiconductor Device and Method of Forming Partially-Etched Conductive Layer Recessed Within Substrate for Bonding to Semiconductor Die 有权半导体器件和形成部分蚀刻的导电层的方法，用于接合到半导体管芯的衬底内公开(公告)号：US20120326303A1
公开(公告)日：2012-12-27
申请号：US13606631
申请日：2012-09-07
申请人： KyuWon Lee , HyunSu Shin , Hun Jeong , JinGwan Kim , SunYoung Chun
发明人： KyuWon Lee , HyunSu Shin , Hun Jeong , JinGwan Kim , SunYoung Chun
IPC分类号： H01L23/48
CPC分类号： H01L21/52 , H01L21/563 , H01L23/3128 , H01L23/48 , H01L24/10 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L25/105 , H01L25/50 , H01L2224/13 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/1718 , H01L2224/32225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2224/83102 , H01L2224/92125 , H01L2224/94 , H01L2225/1023 , H01L2225/1058 , H01L2924/00011 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/00014 , H01L2224/81805
摘要： A semiconductor device has a substrate with a die attach area. A conductive layer is formed over a surface of the substrate and extending below the surface. An insulating layer is formed over the surface of the substrate outside the die attach area. A portion of the conductive layer is removed within the die attach area to expose sidewalls of the substrate. The remaining portion of the conductive layer is recessed below the surface of the substrate within the die attach area. A semiconductor die has bumps formed over its active surface. The semiconductor die is mounted to the substrate by bonding the bumps to the remaining portion of the first conductive layer recessed below the first surface of the substrate. The sidewalls of the substrate retain the bumps during bonding to the remaining portion of the conductive layer. An encapsulant is deposited between the semiconductor die and substrate.
摘要翻译： 半导体器件具有具有管芯附着区域的衬底。 导电层形成在衬底的表面上并在表面下方延伸。 在芯片附着区域外部的基板的表面上形成绝缘层。 导电层的一部分在管芯附着区域内去除以暴露衬底的侧壁。 导电层的剩余部分在芯片附着区域内凹陷在基板的表面下方。 半导体管芯在其有效表面上形成凸块。 半导体管芯通过将凸起焊接到凹陷在基板的第一表面下方的第一导电层的剩余部分而安装到基板。 在与导电层的剩余部分接合期间，衬底的侧壁保持凸块。 密封剂沉积在半导体管芯和衬底之间。
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4.发明授权Semiconductor device with partially-etched conductive layer recessed within substrate for bonding to semiconductor die 有权半导体器件具有凹陷在衬底内的部分蚀刻的导电层，用于接合到半导体管芯公开(公告)号：US08502392B2
公开(公告)日：2013-08-06
申请号：US13606631
申请日：2012-09-07
申请人： KyuWon Lee , HyunSu Shin , Hun Jeong , JinGwan Kim , SunYoung Chun
发明人： KyuWon Lee , HyunSu Shin , Hun Jeong , JinGwan Kim , SunYoung Chun
CPC分类号： H01L21/52 , H01L21/563 , H01L23/3128 , H01L23/48 , H01L24/10 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L25/105 , H01L25/50 , H01L2224/13 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/1718 , H01L2224/32225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2224/83102 , H01L2224/92125 , H01L2224/94 , H01L2225/1023 , H01L2225/1058 , H01L2924/00011 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/00014 , H01L2224/81805
摘要： A semiconductor device has a substrate with a die attach area. A conductive layer is formed over a surface of the substrate and extending below the surface. An insulating layer is formed over the surface of the substrate outside the die attach area. A portion of the conductive layer is removed within the die attach area to expose sidewalls of the substrate. The remaining portion of the conductive layer is recessed below the surface of the substrate within the die attach area. A semiconductor die has bumps formed over its active surface. The semiconductor die is mounted to the substrate by bonding the bumps to the remaining portion of the first conductive layer recessed below the first surface of the substrate. The sidewalls of the substrate retain the bumps during bonding to the remaining portion of the conductive layer. An encapsulant is deposited between the semiconductor die and substrate.
摘要翻译： 半导体器件具有具有管芯附着区域的衬底。 导电层形成在衬底的表面上并在表面下方延伸。 在芯片附着区域外部的基板的表面上形成绝缘层。 导电层的一部分在管芯附着区域内去除以暴露衬底的侧壁。 导电层的剩余部分在芯片附着区域内凹陷在基板的表面下方。 半导体管芯在其有效表面上形成凸块。 半导体管芯通过将凸起焊接到凹陷在基板的第一表面下方的第一导电层的剩余部分而安装到基板。 在与导电层的剩余部分接合期间，衬底的侧壁保持凸块。 密封剂沉积在半导体管芯和衬底之间。
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5.发明授权Method of forming partially-etched conductive layer recessed within substrate for bonding to semiconductor die 有权形成部分蚀刻的导电层的方法，该导电层凹入衬底内用于接合到半导体管芯公开(公告)号：US08288202B2
公开(公告)日：2012-10-16
申请号：US12951399
申请日：2010-11-22
申请人： KyuWon Lee , HyunSu Shin , Hun Jeong , JinGwan Kim , SunYoung Chun
发明人： KyuWon Lee , HyunSu Shin , Hun Jeong , JinGwan Kim , SunYoung Chun
CPC分类号： H01L21/52 , H01L21/563 , H01L23/3128 , H01L23/48 , H01L24/10 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L25/105 , H01L25/50 , H01L2224/13 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/1718 , H01L2224/32225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2224/83102 , H01L2224/92125 , H01L2224/94 , H01L2225/1023 , H01L2225/1058 , H01L2924/00011 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/00014 , H01L2224/81805
摘要： A semiconductor device has a substrate with a die attach area. A conductive layer is formed over a surface of the substrate and extending below the surface. An insulating layer is formed over the surface of the substrate outside the die attach area. A portion of the conductive layer is removed within the die attach area to expose sidewalls of the substrate. The remaining portion of the conductive layer is recessed below the surface of the substrate within the die attach area. A semiconductor die has bumps formed over its active surface. The semiconductor die is mounted to the substrate by bonding the bumps to the remaining portion of the first conductive layer recessed below the first surface of the substrate. The sidewalls of the substrate retain the bumps during bonding to the remaining portion of the conductive layer. An encapsulant is deposited between the semiconductor die and substrate.
摘要翻译： 半导体器件具有具有管芯附着区域的衬底。 导电层形成在衬底的表面上并在表面下方延伸。 在芯片附着区域外部的基板的表面上形成绝缘层。 导电层的一部分在管芯附着区域内去除以暴露衬底的侧壁。 导电层的剩余部分在芯片附着区域内凹陷在基板的表面下方。 半导体管芯在其有效表面上形成凸块。 半导体管芯通过将凸起焊接到凹陷在基板的第一表面下方的第一导电层的剩余部分而安装到基板。 在与导电层的剩余部分接合期间，衬底的侧壁保持凸块。 密封剂沉积在半导体管芯和衬底之间。
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公开(公告)号：US20120126416A1
公开(公告)日：2012-05-24
申请号：US12951399
申请日：2010-11-22
申请人： KyuWon Lee , HyunSu Shin , Hun Jeong , JinGwan Kim , SunYoung Chun
发明人： KyuWon Lee , HyunSu Shin , Hun Jeong , JinGwan Kim , SunYoung Chun
IPC分类号： H01L23/522 , H01L21/50
CPC分类号： H01L21/52 , H01L21/563 , H01L23/3128 , H01L23/48 , H01L24/10 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L25/105 , H01L25/50 , H01L2224/13 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/1718 , H01L2224/32225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2224/83102 , H01L2224/92125 , H01L2224/94 , H01L2225/1023 , H01L2225/1058 , H01L2924/00011 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2224/81 , H01L2924/00 , H01L2924/00014 , H01L2224/81805
摘要： A semiconductor device has a substrate with a die attach area. A conductive layer is formed over a surface of the substrate and extending below the surface. An insulating layer is formed over the surface of the substrate outside the die attach area. A portion of the conductive layer is removed within the die attach area to expose sidewalls of the substrate. The remaining portion of the conductive layer is recessed below the surface of the substrate within the die attach area. A semiconductor die has bumps formed over its active surface. The semiconductor die is mounted to the substrate by bonding the bumps to the remaining portion of the first conductive layer recessed below the first surface of the substrate. The sidewalls of the substrate retain the bumps during bonding to the remaining portion of the conductive layer. An encapsulant is deposited between the semiconductor die and substrate.
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