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45 条记录 (耗时 0.035 秒)

    Method for providing pedestal-defined zero throat writer
    3.
    发明授权
    Method for providing pedestal-defined zero throat writer 失效
    提供基座定义零喉作家的方法

    公开(公告)号：US06785955B1

    公开(公告)日：2004-09-07

    申请号：US09769060

    申请日：2001-01-23

    申请人： Yingjian Chen ,  Hugh Craig Hiner ,  Benjamin Chen ,  Xizeng Shi ,  Kyusik Sin

    发明人： Yingjian Chen ,  Hugh Craig Hiner ,  Benjamin Chen ,  Xizeng Shi ,  Kyusik Sin

    IPC分类号： H04R3100

    CPC分类号： G11B5/3967 ,  G11B5/3109 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49062

    摘要： A method and system for providing a writer is disclosed. The method and system include providing a first pole, an insulator covering a portion of the first pole and a coil on the first insulator. The coil includes a plurality of turns. The method and system also include providing a second insulator covering the coil, providing a second pole on the second insulator and providing a write gap separating a portion of the first pole from a second portion of the second pole. A first portion of the second pole is coupled with the first pole. In one aspect, the method and system include providing a coil having a plurality of turns with a pitch of no more than 1.2 micrometers. In another aspect, the plurality of turns of the coil is provided using a hard mask layer on a photoresist layer. A portion of the hard mask layer and a portion of the photoresist layer define a plurality of spaces between the pluralities of turns of the coil. In another aspect, the writer is a pedestal defined zero throat writer. In this aspect, the first insulator has a depression therein and the coil is provided on the depression.

    摘要翻译： 公开了一种用于提供写入器的方法和系统。 该方法和系统包括提供第一极，覆盖第一极的一部分的绝缘体和第一绝缘体上的线圈。 线圈包括多个匝。 该方法和系统还包括提供覆盖线圈的第二绝缘体，在第二绝缘体上提供第二极，并提供将第一极的一部分与第二极的第二部分分开的写间隙。 第二极的第一部分与第一极耦合。 在一个方面，该方法和系统包括提供具有不超过1.2微米的间距的多个匝的线圈。 在另一方面，使用光致抗蚀剂层上的硬掩模层来提供线圈的多圈。 硬掩模层的一部分和光致抗蚀剂层的一部分在线圈的多圈之间限定多个空间。 在另一方面，作者是一个基座定义的零喉作家。 在这方面，第一绝缘体具有凹陷，线圈设置在凹部上。

    Spin dependent tunneling barriers formed with a magnetic alloy
    4.
    发明授权
    Spin dependent tunneling barriers formed with a magnetic alloy 有权
    由磁性合金形成的自旋依赖隧道屏障

    公开(公告)号：US06747301B1

    公开(公告)日：2004-06-08

    申请号：US10071798

    申请日：2002-02-06

    申请人： Hugh Craig Hiner ,  Kyusik Sin ,  Shin Funada ,  Xizeng Shi ,  Hua-Ching Tong

    发明人： Hugh Craig Hiner ,  Kyusik Sin ,  Shin Funada ,  Xizeng Shi ,  Hua-Ching Tong

    IPC分类号： H01L2976

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/3213 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/226

    摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic atoms disposed in a substantially homogenous layer. The presence of such atoms in the tunneling barrier is believed to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increase &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells.

    摘要翻译： 公开了一种用于自旋相关隧道（SDT）装置的隧道势垒，其包括设置在基本均匀的层中的多个铁磁原子。 据信这种原子在隧道势垒中的存在增加了磁阻或ΔR/ R响应，改善了信号和信噪比。 这种增加DeltaR / R响应也提供减小隧道势垒层的面积的可能性。 降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。

    Spin dependent tunneling barriers doped with magnetic particles
    5.
    发明授权
    Spin dependent tunneling barriers doped with magnetic particles 有权
    掺杂有磁性颗粒的自旋相关隧道势垒

    公开(公告)号：US06639291B1

    公开(公告)日：2003-10-28

    申请号：US10071796

    申请日：2002-02-06

    申请人： Kyusik Sin ,  Shin Funada ,  Hugh Craig Hiner ,  Hua-Ching Tong ,  Xizeng Shi

    发明人： Kyusik Sin ,  Shin Funada ,  Hugh Craig Hiner ,  Hua-Ching Tong ,  Xizeng Shi

    IPC分类号： H01L2972

    CPC分类号： H01L27/226 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/16 ,  H01F10/3227 ,  H01F10/3254 ,  H01L29/66984 ,  H01L43/08

    摘要： A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or &Dgr;R/R response, improving the signal and the signal to noise ratio. Such an increased &Dgr;R/R response also offers the possibility of decreasing an area of the tunnel barrier layer and/or increasing a thickness of the tunnel barrier layer. Decreasing the area of the tunnel barrier layer can afford improvements in resolution of devices such as MR sensors and increased density of devices such as of MRAM cells. Increasing the thickness of the tunnel barrier can afford improvements in manufacturing such as increased yield.

    摘要翻译： 公开了一种包括多个铁磁颗粒的自旋相关隧道（SDT）装置的隧道势垒。 已经发现在隧道势垒中存在这样的颗粒增加了磁阻或ΔR/ R响应，改善了信号和信噪比。 这种增加的DeltaR / R响应也提供减少隧道势垒层的面积和/或增加隧道势垒层的厚度的可能性。 降低隧道势垒层的面积可以提供诸如MR传感器的装置的分辨率的提高和诸如MRAM单元的装置的增加的密度。 增加隧道屏障的厚度可以提高制造成本，例如提高产量。

    Magnetic heads for perpendicular recording with trapezoidal pole tips
    6.
    发明授权
    Magnetic heads for perpendicular recording with trapezoidal pole tips 有权
    用于垂直记录的梯形磁极头

    公开(公告)号：US06809899B1

    公开(公告)日：2004-10-26

    申请号：US10751215

    申请日：2003-12-31

    申请人： Yingjian Chen ,  Yugang Wang ,  Francis Liu ,  Xizeng Shi ,  Kyusik Sin ,  Hugh Craig Hiner

    发明人： Yingjian Chen ,  Yugang Wang ,  Francis Liu ,  Xizeng Shi ,  Kyusik Sin ,  Hugh Craig Hiner

    IPC分类号： G11B5147

    CPC分类号： G11B5/1278 ,  Y10S977/934

    摘要： Electromagnetic transducers are disclosed having write poles with a leading edge that is smaller than a trailing edge, which can reduce erroneous writing for perpendicular recording systems. The write poles may have a trapezoidal shape when viewed from a direction of an associated medium. The write poles may be incorporated in heads or sliders that also contain read elements such as magnetoresistive sensors, and may be employed with information storage systems such as disk drives.

    摘要翻译： 公开了具有写入极的电磁换能器，其前缘小于后缘，这可以减少用于垂直记录系统的错误写入。 当从相关联的介质的方向观察时，写入极可以具有梯形形状。 写入极可以并入还包含诸如磁阻传感器的读取元件的磁头或滑块中，并且可以用于诸如磁盘驱动器的信息存储系统。

    Magnetic tunnel junction MRAM with improved stability
    7.
    发明授权
    Magnetic tunnel junction MRAM with improved stability 有权
    磁隧道结MRAM具有改善的稳定性

    公开(公告)号：US06803615B1

    公开(公告)日：2004-10-12

    申请号：US10020663

    申请日：2001-12-14

    申请人： Kyusik Sin ,  Xizeng Shi ,  Hugh Craig Hiner

    发明人： Kyusik Sin ,  Xizeng Shi ,  Hugh Craig Hiner

    IPC分类号： H01L2976

    CPC分类号： G11C11/16 ,  H01L27/228 ,  H01L43/08

    摘要： An MRAM cell includes a pinned layer, a free layer, and a bit line with a magnetic sheath. The magnetic sheath allows a magnetic field to circulate in a loop around the bit line. The looping magnetic field can couple with the magnetic field of the free layer for enhanced stability with respect to stray magnetic fields and elevated temperatures.

    摘要翻译： MRAM单元包括钉扎层，自由层和具有磁性护套的位线。 磁性护套允许磁场围绕位线循环循环。 环形磁场可以与自由层的磁场耦合，以增强相对于杂散磁场和升高的温度的稳定性。

    Method and system for providing a PMR head having an antiferromagnetically coupled pole
    8.
    发明授权
    Method and system for providing a PMR head having an antiferromagnetically coupled pole 有权
    用于提供具有反铁磁耦合极的PMR头的方法和系统

    公开(公告)号：US07911737B1

    公开(公告)日：2011-03-22

    申请号：US11726793

    申请日：2007-03-23

    申请人： Hai Jiang ,  Kyusik Sin

    发明人： Hai Jiang ,  Kyusik Sin

    IPC分类号： G11B5/31

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

    摘要： The method and system for providing a perpendicular magnetic recording (PMR) head are described. The method and system include providing a metal underlayer and a PMR pole on the metal underlayer. The metal underlayer is amorphous. The PMR pole has a bottom and a top wider than the bottom. The PMR pole includes at least a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer. The first ferromagnetic layer is antiferromagnetically coupled with the second ferromagnetic layer. The second ferromagnetic layer is antiferromagnetically coupled with the third ferromagnetic layer.

    摘要翻译： 描述了用于提供垂直磁记录（PMR）头的方法和系统。 该方法和系统包括在金属底层上提供金属底层和PMR极。 金属底层是无定形的。 PMR极具有底部和顶部宽于底部。 PMR极包括至少第一铁磁层，第二铁磁层和第三铁磁层。 第一铁磁层与第二铁磁层反铁磁耦合。 第二铁磁层与第三铁磁层反铁磁耦合。

    Spin valve sensors having synthetic antiferromagnet for longitudinal bias
    9.
    发明授权
    Spin valve sensors having synthetic antiferromagnet for longitudinal bias 失效
    旋转阀传感器具有用于纵向偏置的合成反铁磁体

    公开(公告)号：US07289303B1

    公开(公告)日：2007-10-30

    申请号：US09828635

    申请日：2001-04-05

    申请人： Kyusik Sin ,  Ningjia Zhu ,  Yingjian Chen

    发明人： Kyusik Sin ,  Ningjia Zhu ,  Yingjian Chen

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/3272 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

    摘要： Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed magnetic moment adjoining the exchange coupling layer. The exchange coupling layer and ferromagnetic layer form a synthetic antiferromagnetic structure with part of the free layer, providing bias that reduces magnetic instabilities at edges of the free layer. Such synthetic antiferromagnetic structures can provide a stronger bias than conventional antiferromagnetic layers, as well as a more exactly defined track width than conventional hard magnetic bias layers. The synthetic antiferromagnetic structures can also provide protection for the free layer during processing, in contrast with the trimming of conventional antiferromagnetic layers that exposes if not removes part of the free layer.

    摘要翻译： 公开了具有减小诸如巴克豪森噪声等边缘效应的机构的磁阻（MR）传感器。 传感器包括钉扎层和具有邻接自由层的交换耦合层的自由层，以及具有与交换耦合层邻接的固定磁矩的铁磁层。 交换耦合层和铁磁层形成具有部分自由层的合成反铁磁结构，提供降低自由层边缘的磁性不稳定性的偏压。 这种合成反铁磁结构可以提供比常规反铁磁层更强的偏压，以及比常规硬磁偏置层更精确地定义的轨道宽度。 合成反铁磁性结构也可以在加工过程中为自由层提供保护，与如果不除去部分自由层的常规反铁磁层的修整相反。