利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

41 条记录 (耗时 0.017 秒)

    Silicon oxide silicon nitride stack stair step etch
    1.
    发明授权
    Silicon oxide silicon nitride stack stair step etch 有权

    公开(公告)号：US11646207B2

    公开(公告)日：2023-05-09

    申请号：US16766256

    申请日：2018-11-29

    申请人： Lam Research Corporation

    发明人： Ce Qin ,  Zhongkui Tan ,  Qian Fu ,  Sam Do Lee

    IPC分类号： H01L21/3065 ,  H01L21/311

    CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/31144

    摘要： A method for forming a stair-step structure in a stack on a substrate is provided. The method comprises at least one stair step cycle. Each stair step cycle comprises trimming the mask and etching the stack. Etching the stack is provided in a plurality of cycles wherein each cycle comprises etching a SiO2 layer and etching a SiN layer. Etching a SiO2 layer comprises flowing a SiO2 etching gas into the plasma processing chamber, wherein the SiO2 etching gas comprises a hydrofluorocarbon, an inert bombardment gas, and at least one of SF6 and NF3, generating a plasma from the SiO2 etching gas, providing a bias, and stopping the SiO2 layer etch. The etching a SiN layer comprises flowing a SiN etching gas into the plasma processing chamber, comprising a hydrofluorocarbon and oxygen, generating a plasma from the SiN etching gas, providing a bias, and stopping the SiN layer etch.

    METHOD AND APPARATUS FOR ANISOTROPIC TUNGSTEN ETCHING
    3.
    发明申请
    METHOD AND APPARATUS FOR ANISOTROPIC TUNGSTEN ETCHING 有权
    方法和装置用于各向异性刺激蚀刻

    公开(公告)号：US20160196985A1

    公开(公告)日：2016-07-07

    申请号：US14589424

    申请日：2015-01-05

    申请人： LAM RESEARCH CORPORATION

    发明人： Zhongkui Tan ,  Qian Fu ,  Huai-Yu Hsiao

    IPC分类号： H01L21/3213 ,  H01L21/027 ,  H01L21/67

    CPC分类号： H01L21/32136 ,  H01J37/32449 ,  H01J2237/334 ,  H01L21/32138 ,  H01L21/32139 ,  H01L21/67069

    摘要： Methods for anisotropically etching a tungsten-containing material (such as doped or undoped tungsten metal) include cyclic treatment of tungsten surface with Cl2 plasma and with oxygen-containing radicals. Treatment with chlorine plasma is performed while the substrate is electrically biased resulting in predominant etching of horizontal surfaces on the substrate. Treatment with oxygen-containing radicals passivates the surface of the substrate to etching, and protects the vertical surfaces of the substrate, such as sidewalls of recessed features, from etching. Treatment with Cl2 plasma and with oxygen-containing radicals can be repeated in order to remove a desired amount of material. Anisotropic etching can be performed selectively in a presence of dielectric materials such as silicon oxide, silicon nitride, and silicon oxynitride.

    摘要翻译： 含钨材料（例如掺杂或未掺杂的钨金属）的各向异性蚀刻的方法包括用Cl 2等离子体和含氧基团对钨表面进行循环处理。 在对基板进行电偏压的同时进行用氯等离子体的处理，导致基板上的水平表面的主要蚀刻。 用含氧自由基进行处理使基板的表面钝化成蚀刻，并且保护基板的垂直表面（例如凹陷特征的侧壁）不被蚀刻。 可以重复用Cl 2等离子体和含氧基团进行处理以除去所需量的材料。 各向异性蚀刻可以在介电材料如氧化硅，氮化硅和氮氧化硅的存在下选择性地进行。

    Methods and Systems for Advanced Ion Control for Etching Processes
    4.
    发明申请
    Methods and Systems for Advanced Ion Control for Etching Processes 有权

    公开(公告)号：US20210193474A1

    公开(公告)日：2021-06-24

    申请号：US17196778

    申请日：2021-03-09

    申请人： Lam Research Corporation

    发明人： Zhongkui Tan ,  Qian Fu ,  Ying Wu ,  Qing Xu ,  John Drewery

    IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/308 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67

    摘要： A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.

    SYSTEMS AND METHODS FOR REVERSE PULSING
    8.
    发明申请
    SYSTEMS AND METHODS FOR REVERSE PULSING 审中-公开
    反向脉冲的系统和方法

    公开(公告)号：US20170040176A1

    公开(公告)日：2017-02-09

    申请号：US15139045

    申请日：2016-04-26

    申请人： Lam Research Corporation

    发明人： Maolin Long ,  Zhongkui Tan ,  Ying Wu ,  Qian Fu ,  Alex Paterson ,  John Drewery

    IPC分类号： H01L21/3065 ,  H01L21/67

    CPC分类号： H01L21/3065 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32422 ,  H01L21/67069

    摘要： Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in the first state and having a low state when the digital signal is in the second state. The method includes providing the TCP RF pulsed signal to one or more coils of a plasma chamber, generating a bias RF pulsed signal having a low state when the digital signal is in the first state and having a high state when the digital signal is in the second state, and providing the bias RF pulsed signal to a chuck of the plasma chamber.

    摘要翻译： 描述了用于反向脉冲的系统和方法。 方法之一包括接收具有第一状态和第二状态的数字信号。 该方法还包括当数字信号处于第一状态时产生具有高状态的变压器耦合等离子体（TCP）射频（RF）脉冲信号，并且当数字信号处于第二状态时具有低状态。 该方法包括将TCP RF脉冲信号提供给等离子体室的一个或多个线圈，当数字信号处于第一状态时产生具有低状态的偏置RF脉冲信号，并且当数字信号处于 并且将偏压RF脉冲信号提供给等离子体室的卡盘。

    Amorphous carbon layer opening process
    9.
    发明授权
    Amorphous carbon layer opening process 有权

    公开(公告)号：US11037784B2

    公开(公告)日：2021-06-15

    申请号：US16964515

    申请日：2019-01-28

    申请人： Lam Research Corporation

    发明人： Ce Qin ,  Zhongkui Tan ,  Yisha Mao ,  Yansha Jin ,  Austin Casey Faucett

    IPC分类号： H01L21/027 ,  H01L21/033

    摘要： A method for opening an amorphous carbon layer mask below a hardmask is provided. The opening an amorphous carbon layer mask comprises performing one or more cycles, where each cycle comprises an amorphous carbon layer mask opening phase and a cleaning phase. The amorphous carbon layer mask opening phase comprises flowing an opening gas into a plasma processing chamber, wherein the opening gas comprises an oxygen containing component, creating a plasma from the opening gas, which etches features in the amorphous carbon layer mask, and stopping the flow of the opening gas. The cleaning phase comprises flowing a cleaning gas into the plasma processing chamber, wherein the cleaning gas comprises a hydrogen containing component, a carbon containing component, and a halogen containing component, creating a plasma from the cleaning gas; and stopping the flow of the cleaning gas into the plasma processing chamber.