公开(公告)号：US20240038504A1

公开(公告)日：2024-02-01

申请号：US18377141

申请日：2023-10-05

Applicant: Lam Research Corporation

Inventor： Alejandro SANCHEZ ,  Grayson Ford ,  Darrell Ehrlich ,  Aravind Alwan ,  Kevin Leung ,  Anthony Contreras ,  Zhumin Han ,  Raphael Casaes ,  Joanna Wu

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/68735 ,  H01L21/68742 ,  H01J2237/20235

Abstract: A first edge ring for a substrate support is provided. The first edge ring includes an annular-shaped body and one or more lift pin receiving elements. The annular-shaped body is sized and shaped to surround an upper portion of the substrate support. The annular-shaped body defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The one or more lift pin receiving elements are disposed along the lower surface of the annular-shaped body and sized and shaped to receive and provide kinematic coupling with top ends respectively of three or more lift pins.

公开(公告)号：US20210183687A1

公开(公告)日：2021-06-17

申请号：US17181571

申请日：2021-02-22

Applicant: Lam Research Corporation

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon McChesney ,  Alex Paterson

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/02 ,  H01J37/20 ,  H01J37/32

Abstract: An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

公开(公告)号：US10658222B2

公开(公告)日：2020-05-19

申请号：US14705430

申请日：2015-05-06

Applicant: Lam Research Corporation

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon McChesney ,  Alex Paterson

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  H01J37/02 ,  H01J37/20

Abstract: A substrate processing system includes a processing chamber and a pedestal arranged in the processing chamber. An edge coupling ring is arranged adjacent to a radially outer edge of the pedestal. A first actuator is configured to selectively move the edge coupling ring to a raised position, relative to the pedestal to provide clearance between the edge coupling ring and the pedestal to allow a robot arm to remove the edge coupling ring from the processing chamber.

公开(公告)号：US20160211166A1

公开(公告)日：2016-07-21

申请号：US14705430

申请日：2015-05-06

Applicant: Lam Research Corporation

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon McChesney ,  Alex Paterson

IPC: H01L21/687 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/68742 ,  H01J37/023 ,  H01J37/20 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/68735

Abstract: A substrate processing system includes a processing chamber and a pedestal arranged in the processing chamber. An edge coupling ring is arranged adjacent to a radially outer edge of the pedestal. A first actuator is configured to selectively move the edge coupling ring to a raised position, relative to the pedestal to provide clearance between the edge coupling ring and the pedestal to allow a robot arm to remove the edge coupling ring from the processing chamber.

Abstract translation: 基板处理系统包括处理室和布置在处理室中的基座。 边缘联接环布置成邻近基座的径向外边缘。 第一致动器构造成相对于基座选择性地将边缘联接环移动到升高位置，以在边缘联接环和基座之间提供间隙，以允许机器人臂从处理室移除边缘联接环。

公开(公告)号：US12027410B2

公开(公告)日：2024-07-02

申请号：US17181571

申请日：2021-02-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon Mcchesney ,  Alex Paterson

IPC: H01L21/687 ,  H01J37/02 ,  H01J37/20 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/68742 ,  H01J37/023 ,  H01J37/20 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/68735

Abstract: An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

公开(公告)号：US20140342568A1

公开(公告)日：2014-11-20

申请号：US13896175

申请日：2013-05-16

Applicant: Lam Research Corporation

Inventor： Sanket Sant ,  Raphael Casaes

IPC: G05D23/19 ,  H01L21/3065

CPC classification number: G05D23/1951 ,  G05D23/1931 ,  G05D23/22 ,  H01J37/321 ,  H01J37/32522 ,  H01J37/32651 ,  H01J37/32862 ,  H01L21/3065

Abstract: A method for controlling thermal cycling of a faraday shield in a plasma process chamber is provided. The method includes: performing a first plasma processing operation on a first wafer in the plasma process chamber; terminating the first plasma processing operation; performing a first wafer transfer operation to transfer the first wafer out of the chamber; and, during the first wafer transfer operation, applying power to a TCP coil under a plasma limiting condition.

Abstract translation: 提供了一种用于控制等离子体处理室中的法拉第屏蔽件的热循环的方法。 该方法包括：对等离子体处理室中的第一晶片执行第一等离子体处理操作; 终止第一等离子体处理操作; 执行第一晶片转移操作以将所述第一晶片转移出所述腔室; 并且在第一晶片转移操作期间，在等离子体限制条件下向TCP线圈施加电力。

公开(公告)号：US11798789B2

公开(公告)日：2023-10-24

申请号：US16960818

申请日：2018-09-10

Applicant: LAM RESEARCH CORPORATION

Inventor： Alejandro Sanchez ,  Grayson Ford ,  Darrell Ehrlich ,  Aravind Alwan ,  Kevin Leung ,  Anthony Contreras ,  Zhumin Han ,  Raphael Casaes ,  Joanna Wu

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/68735 ,  H01L21/68742 ,  H01J2237/20235

Abstract: A first edge ring for a substrate support is provided. The first edge ring includes an annular-shaped body and one or more lift pin receiving elements. The annular-shaped body is sized and shaped to surround an upper portion of the substrate support. The annular-shaped body defines an upper surface, a lower surface, a radially inner surface, and a radially outer surface. The one or more lift pin receiving elements are disposed along the lower surface of the annular-shaped body and sized and shaped to receive and provide kinematic coupling with top ends respectively of three or more lift pins.

公开(公告)号：US09029267B2

公开(公告)日：2015-05-12

申请号：US13896175

申请日：2013-05-16

Applicant: Lam Research Corporation

Inventor： Sanket Sant ,  Raphael Casaes

IPC: H01L21/302 ,  G05D23/19 ,  H01L21/3065

CPC classification number: G05D23/1951 ,  G05D23/1931 ,  G05D23/22 ,  H01J37/321 ,  H01J37/32522 ,  H01J37/32651 ,  H01J37/32862 ,  H01L21/3065

Abstract: A method for controlling thermal cycling of a faraday shield in a plasma process chamber is provided. The method includes: performing a first plasma processing operation on a first wafer in the plasma process chamber; terminating the first plasma processing operation; performing a first wafer transfer operation to transfer the first wafer out of the chamber; and, during the first wafer transfer operation, applying power to a TCP coil under a plasma limiting condition.

Abstract translation: 提供了一种用于控制等离子体处理室中的法拉第屏蔽件的热循环的方法。 该方法包括：对等离子体处理室中的第一晶片执行第一等离子体处理操作; 终止第一等离子体处理操作; 执行第一晶片转移操作以将所述第一晶片转移出所述腔室; 并且在第一晶片转移操作期间，在等离子体限制条件下向TCP线圈施加电力。

公开(公告)号：US20130102156A1

公开(公告)日：2013-04-25

申请号：US13625489

申请日：2012-09-24

Applicant: Lam Research Corporation

Inventor： Tom Stevenson ,  Hong Shih ,  Robert G. O'Neill ,  Tae Won Kim ,  Raphael Casaes ,  Yan Fang

IPC: B05B1/00 ,  B32B3/02 ,  H01L21/3065 ,  B32B3/30 ,  B05D3/12 ,  C23C16/44

CPC classification number: H01J37/32477 ,  Y10T428/218 ,  Y10T428/24471

Abstract: A component of a plasma processing chamber includes a three dimensional body having a highly dense plasma resistant coating thereon wherein a plasma exposed surface of the coating has a texture which inhibits particle generation from film buildup on the plasma exposed surface. The component can be a window of an inductively coupled plasma reactor wherein the window includes a textured yttria coating. The texture can be provided by contacting the plasma exposed surface with a polishing pad having a grit size effective to provide intersecting scratches with a depth of 1 to 2 microns.

Abstract translation: 等离子体处理室的组件包括其上具有高致密等离子体涂层的三维体，其中涂层的等离子体暴露表面具有抑制由等离子体暴露表面上的膜积累产生颗粒的结构。 该组件可以是电感耦合等离子体反应器的窗口，其中窗口包括织构化的氧化钇涂层。 可以通过使等离子体暴露的表面与具有有效的砂粒尺寸的抛光垫接触以提供1至2微米的深度的交叉划痕来提供纹理。