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公开(公告)号:US20240308926A1
公开(公告)日:2024-09-19
申请号:US18577889
申请日:2022-08-04
Applicant: Lam Research Corporation
Inventor: Amir A. YASSERI , Hong SHIH , Satish SRINIVASAN , Jeremiah Michael DEDERICK , Pankaj HAZARIKA , Lin XU , Douglas DETERT
CPC classification number: C04B41/0072 , B24C1/003 , H01J37/32495
Abstract: A method for treating a ceramic component for use in a semiconductor processing chamber, wherein the ceramic component comprises a ceramic laminate comprising a base zone comprising a first dielectric ceramic material, a protective, wherein the protective zone comprises a second dielectric ceramic material, and a transition zone between the protective zone and base zone, wherein the transition zone comprises the first dielectric ceramic material and the second dielectric ceramic material, wherein exposure of the ceramic component to UV light changes an optical property of at least a first part of the ceramic component is provided. A heat treatment of the ceramic component is provided by heating the ceramic component in a furnace to a temperature of between 400° C. to 1000° C. for a period between 2 hours to 20 hours, wherein the heat treatment changes the optical property of the first part of the ceramic component.
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公开(公告)号:US20230411124A1
公开(公告)日:2023-12-21
申请号:US18034635
申请日:2021-11-01
Applicant: Lam Research Corporation
Inventor: John Michael KERNS , David Joseph WETZEL , Lin XU , Pankaj HAZARIKA , Douglas DETERT , Lei LIU , Eric A. PAPE
CPC classification number: H01J37/32477 , C04B41/0054 , H01J37/32467 , C04B2235/94 , C04B2235/666 , C04B2235/6028 , C04B35/01
Abstract: A method for forming a component for a plasma processing chamber is provided. An internal mold is provided. An external mold is provided around the internal mold. The external mold is filled with a ceramic powder, wherein the ceramic powder surrounds the internal mold. The ceramic powder is sintered to form a solid part. The solid part is removed from the external mold.
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公开(公告)号:US20230331633A1
公开(公告)日:2023-10-19
申请号:US18247724
申请日:2021-11-03
Applicant: Lam Research Corporation
Inventor: Lin XU , Harmeet SINGH , Pankaj HAZARIKA , Satish SRINIVASAN , Robin KOSHY
IPC: C04B35/565 , H01J37/32 , C04B35/64
CPC classification number: C04B35/565 , H01J37/32642 , H01J37/3244 , C04B35/64 , H01J2237/334 , C04B2235/3826 , C04B2235/3821 , C04B2235/612 , C04B2235/666 , C04B2235/9669
Abstract: A method for making a component for use in a plasma processing chamber is provided. A non-oxide silicon containing powder composition is placed in a mold, wherein the non-oxide silicon containing powder composition consists essentially of a non-oxide silicon containing powder and at least one of a B or B4C dopant. The non-oxide silicon containing powder composition is subjected to spark plasma sintering (SPS) to form a spark plasma sintered component. The spark plasma sintered component is machined into a plasma processing chamber component.
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公开(公告)号:US20230317423A1
公开(公告)日:2023-10-05
申请号:US18021757
申请日:2021-10-27
Applicant: Lam Research Corporation
Inventor: Pankaj HAZARIKA , Joel HOLLINGSWORTH , Matthew Brian SCHICK , Pratima G.N. RAO
IPC: H01J37/32
CPC classification number: H01J37/32467 , H01J37/32495 , H01J37/32807 , H01J2237/3341
Abstract: A component for use in a plasma processing chamber system is START provided. The component for use in a processing chamber system comprises a bulk component body comprising magnesium aluminum oxynitride and sintering aids. The sintering aids comprise at least one of yttria, yttrium aluminate, rare earth metal oxide, and rare earth metal aluminate.
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公开(公告)号:US20230282450A1
公开(公告)日:2023-09-07
申请号:US18011582
申请日:2021-06-24
Applicant: LAM RESEARCH CORPORATION
Inventor: Eric A. PAPE , Shih-Chung KON , Pankaj HAZARIKA , Lin XU
IPC: H01J37/32 , C23C16/455 , C23C16/30
CPC classification number: H01J37/32477 , H01J37/32422 , H01J37/32357 , C23C16/45536 , C23C16/30 , H01J37/32816 , H01J2237/334 , C23C8/08
Abstract: A component of a processing chamber in a substrate processing system includes a base material comprising aluminum, the base material having one or more surfaces, a diffusion barrier layer formed on the surfaces of the base material, wherein the diffusion barrier layer includes magnesium and fluorine (F), and a coating formed on the surfaces. The diffusion barrier layer is arranged between the surfaces and the coating and the coating includes fluorine.
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公开(公告)号:US20230081544A1
公开(公告)日:2023-03-16
申请号:US17794576
申请日:2021-01-26
Applicant: Lam Research Corporation
Inventor: Pylin SAROBOL , Eric SAMULON , Pankaj HAZARIKA , Dennis SMITH , Kurt KERN , Debanjan DAS , Darrell EHRLICH , Eric A. PAPE , Matthew Brian SCHICK
IPC: H01J37/32 , H01L21/683 , B23K26/352
Abstract: A component for use inside a semiconductor chamber with a laser textured surface facing a vacuum region inside the semiconductor chamber is provided.
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公开(公告)号:US20220392753A1
公开(公告)日:2022-12-08
申请号:US17770147
申请日:2020-10-21
Applicant: LAM RESEARCH CORPORATION
Inventor: Lin XU , Douglas DETERT , John DAUGHERTY , Pankaj HAZARIKA , Satish SRINIVASAN , Nash W. ANDERSON , John Michael KERNS , Robin KOSHY , David Joseph WETZEL , Lei LIU , Eric A. PAPE
IPC: H01J37/32
Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.
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