公开(公告)号：US09396910B2

公开(公告)日：2016-07-19

申请号：US14947240

申请日：2015-11-20

Applicant: Lam Research Corporation

Inventor： Sang Ki Nam ,  Rajinder Dhindsa ,  Ryan Bise

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  C23C16/455

CPC classification number: H01J37/32541 ,  C23C16/45565 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/26

Abstract: A heat transfer plate useful in a showerhead electrode assembly of a capacitively coupled plasma processing apparatus. The heat transfer plate includes independently controllable gas volumes which may be pressurized to locally control thermal conductance between a heater member and a cooling member such that uniform temperatures may be established on a plasma exposed surface of the showerhead electrode assembly.

Abstract translation: 一种用于电容耦合等离子体处理装置的喷头电极组件中的传热板。 传热板包括可独立控制的气体体积，其可以被加压以局部地控制加热器构件和冷却构件之间的热传导，使得可以在喷头电极组件的等离子体暴露表面上建立均匀的温度。

公开(公告)号：US09330927B2

公开(公告)日：2016-05-03

申请号：US14012802

申请日：2013-08-28

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Harmeet Singh ,  Sang Ki Nam

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/3065

Abstract: A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of restricting an outlet flow through the at least one outlet port to a first flow rate and capable of increasing the outlet flow through the at least one outlet port to a second flow rate, wherein the conductance control structure restricts the outlet flow rate moves between the first flow rate and the second flow rate corresponding to a selected processing state set by the controller during a plasma process.

Abstract translation: 等离子体处理系统和方法包括处理室和其中包括的等离子体处理体积。 等离子体处理体积的体积小于处理室。 等离子体处理体积由顶部电极，与顶部电极的表面相对的衬底支撑表面和包括至少一个出口的等离子体限制结构限定。 电导控制结构可移动地设置在靠近所述至少一个出口端口并且能够限制通过所述至少一个出口端口的出口流到第一流量并且能够将通过所述至少一个出口端口的出口流增加到 第二流量，其中电导控制结构限制出口流量在等离子体处理期间由与控制器设定的选定处理状态对应的第一流量与第二流量之间移动。

公开(公告)号：US09018022B2

公开(公告)日：2015-04-28

申请号：US13625555

申请日：2012-09-24

Applicant: Lam Research Corporation

Inventor： Sang Ki Nam ,  Rajinder Dhindsa ,  Ryan Bise

IPC: H01L21/00 ,  H01J37/32

CPC classification number: H01J37/32541 ,  C23C16/45565 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/26

Abstract: A showerhead electrode assembly for use in a capacitively coupled plasma processing apparatus comprising a heat transfer plate. The heat transfer plate having independently controllable gas volumes which may be pressurized to locally control thermal conductance between a heater member and a cooling member such that uniform temperatures may be established on a plasma exposed surface of the showerhead electrode assembly.

Abstract translation: 一种用于电容耦合等离子体处理装置的喷头电极组件，包括传热板。 传热板具有可独立控制的气体体积，其可以被加压以局部地控制加热器构件和冷却构件之间的热传导，使得可以在喷头电极组件的等离子体暴露表面上建立均匀的温度。

公开(公告)号：US20150083582A1

公开(公告)日：2015-03-26

申请号：US14033241

申请日：2013-09-20

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Sang Ki Nam ,  Alexei Marakhtanov ,  Eric A. Hudson

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065

Abstract: The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.

Abstract translation: 所公开的技术涉及用于蚀刻衬底的方法和设备。 板组件将反应室分成下部和上部副室。 板组件包括具有穿过其中的孔的上板和下板。 当上板和下板中的孔对齐时，离子和中性物质可以穿过板组件进入下子室。 当孔不对齐时，防止离子通过组件，而中性物质受影响较小。 因此，可以通过控制孔对准的面积的量来调节离子通量：中性流量的比率。 在某些实施例中，板组件的一个板被实现为一系列同心的，可独立移动的喷射控制环。 此外，在一些实施例中，上部子室被实现为由绝缘材料的壁隔开的一系列同心等离子体区域。

公开(公告)号：US11127571B2

公开(公告)日：2021-09-21

申请号：US16750001

申请日：2020-01-23

Applicant: Lam Research Corporation

Inventor： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

IPC: H01J37/32 ,  H01L21/683

Abstract: A chuck assembly for plasma processing, including: an electrostatic chuck having a substrate support surface on a first side; a facility plate coupled to the electrostatic chuck on a second side; a RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly, the first portion being a bowl-shaped section, wherein the second portion connects to the first portion at an opening defined in the bowl-shaped section; wherein the first portion of the RF feed contacts the periphery of the facility plate at a circumference circumference having a radius greater than one-half of a radius of the facility plate, the radius of the circumference being less than the radius of the facility plate; a grounded shield disposed below and surrounding at least a portion of the bowl-shaped section.

公开(公告)号：US20160204007A1

公开(公告)日：2016-07-14

申请号：US15076573

申请日：2016-03-21

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Harmeet Singh ,  Sang Ki Nam

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/3065

Abstract: A method for modulating a pressure in a plasma processing volume of a chamber during a plasma processing operation is disclosed. The plasma processing volume is defined between a surface of a top electrode, a supporting surface of a substrate support and an outer region defined by a plasma confinement structure that encloses an outer perimeter of the plasma processing volume. The plasma confinement structure includes a plurality of equally distributed openings out of the plasma processing volume. The method includes supplying process gases to the processing volume during the plasma processing operation and supplying radio frequency (RF) power to the chamber to produce a plasma using the process gases and to produce gas byproducts. The method further includes controlling a position of a conductance control structure relative to the plasma confinement structure. During a first period of time of the plasma processing operation, the position of the conductance control structure is moved to increase a restriction the produced gas byproducts that flow out of the process volume through the plasma confinement structure. During a second period of time of the plasma processing operation, the position of the conductance control structure is moved to decrease a restriction the produced gas byproducts that flow out of the process volume through the plasma confinement structure. The movement of the conductance control structure functions to module the pressure during the plasma processing operation.

Abstract translation: 公开了一种用于在等离子体处理操作期间调制室的等离子体处理体积中的压力的​​方法。 等离子体处理体积限定在顶部电极的表面，衬底支撑件的支撑表面和由包围等离子体处理体积的外周边的等离子体限制结构限定的外部区域之间。 等离子体约束结构包括离开等离子体处理体积的多个均匀分布的开口。 该方法包括在等离子体处理操作期间向处理体积提供处理气体，并且向室提供射频（RF）功率以使用该工艺气体产生等离子体并产生气体副产物。 该方法还包括控制电导控制结构相对于等离子体限制结构的位置。 在等离子体处理操作的第一时间段期间，移动电导控制结构的位置以增加通过等离子体限制结构流出处理体积的产生的气体副产物的限制。 在等离子体处理操作的第二时间段期间，移动电导控制结构的位置以减少通过等离子体限制结构流出处理体积的产生的气体副产物的限制。 电导控制结构的运动用于在等离子体处理操作期间模块化压力。

公开(公告)号：US20200243307A1

公开(公告)日：2020-07-30

申请号：US16845723

申请日：2020-04-10

Applicant: Lam Research Corporation

Inventor： Ryan Bise ,  Rajinder Dhindsa ,  Alexei Marakhtanov ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la Llera ,  Darrell Ehrlich

IPC: H01J37/32

Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

公开(公告)号：US09793126B2

公开(公告)日：2017-10-17

申请号：US14033241

申请日：2013-09-20

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Sang Ki Nam ,  Alexei Marakhtanov ,  Eric A. Hudson

IPC: C23C14/34 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065

Abstract: The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.

公开(公告)号：US20170213747A9

公开(公告)日：2017-07-27

申请号：US14033241

申请日：2013-09-20

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Sang Ki Nam ,  Alexei Marakhtanov ,  Eric A. Hudson

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065

Abstract: The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.

公开(公告)号：US20140087488A1

公开(公告)日：2014-03-27

申请号：US13625555

申请日：2012-09-24

Applicant: LAM RESEARCH CORPORATION

Inventor： Sang Ki Nam ,  Rajinder Dhindsa ,  Ryan Bise

IPC: H01L21/3065 ,  B05B1/24 ,  H01L21/66

CPC classification number: H01J37/32541 ,  C23C16/45565 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/3065 ,  H01L22/26

Abstract: A showerhead electrode assembly for use in a capacitively coupled plasma processing apparatus comprising a heat transfer plate. The heat transfer plate having independently controllable gas volumes which may be pressurized to locally control thermal conductance between a heater member and a cooling member such that uniform temperatures may be established on a plasma exposed surface of the showerhead electrode assembly.

Abstract translation: 一种用于电容耦合等离子体处理装置的喷头电极组件，包括传热板。 传热板具有可独立控制的气体体积，其可以被加压以局部地控制加热器构件和冷却构件之间的热传导，使得可以在喷头电极组件的等离子体暴露表面上建立均匀的温度。