公开(公告)号：US11935758B2

公开(公告)日：2024-03-19

申请号：US17600999

申请日：2020-04-27

Applicant: Lam Research Corporation

Inventor： Wenbing Yang ,  Mohand Brouri ,  Samantha SiamHwa Tan ,  Shih-Ked Lee ,  Yiwen Fan ,  Wook Choi ,  Tamal Mukherjee ,  Ran Lin ,  Yang Pan

IPC: H01L21/3213

CPC classification number: H01L21/32139 ,  H01L21/32136

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

公开(公告)号：US12266542B2

公开(公告)日：2025-04-01

申请号：US18435244

申请日：2024-02-07

Applicant: Lam Research Corporation

Inventor： Wenbing Yang ,  Mohand Brouri ,  Samantha SiamHwa Tan ,  Shih-Ked Lee ,  Yiwen Fan ,  Wook Choi ,  Tamal Mukherjee ,  Ran Lin ,  Yang Pan

IPC: H01L21/3213

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

公开(公告)号：US12062537B2

公开(公告)日：2024-08-13

申请号：US17439948

申请日：2020-03-18

Applicant: LAM RESEARCH CORPORATION

Inventor： Jun Xue ,  Mary Anne Manumpil ,  Shih-Ked Lee ,  Samantha SiamHwa Tan

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/455 ,  C23C16/505 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/02274 ,  C23C16/26 ,  C23C16/45536 ,  C23C16/505 ,  H01L21/02115 ,  H01L21/0228 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from −20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.

公开(公告)号：US11670516B2

公开(公告)日：2023-06-06

申请号：US17259526

申请日：2019-08-19

Applicant: Lam Research Corporation

Inventor： Karthik S. Colinjivadi ,  Samantha SiamHwa Tan ,  Shih-Ked Lee ,  George Matamis ,  Yongsik Yu ,  Yang Pan ,  Patrick Van Cleemput ,  Akhil Singhal ,  Juwen Gao ,  Raashina Humayun

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/31144

Abstract: Various embodiments herein relate to methods, apparatus, and systems for etching a feature in a substrate. Typically the feature is etched in a dielectric-containing stack. The etching process involves cyclically etching the feature and depositing a protective film on sidewalls of the partially etched feature. These stages are repeated until the feature reaches its final depth. The protective film may have a particular composition, for example including at least one of a tungsten carbonitride, a tungsten sulfide, tin, a tin-containing compound, molybdenum, a molybdenum-containing compound, a ruthenium carbonitride, a ruthenium sulfide, an aluminum carbonitride, an aluminum sulfide, zirconium, and a zirconium-containing compound. A number of optional steps may be taken including, for example, doping the mask layer, pre-treating the substrate prior to deposition, removing the protective film from the sidewalls, and oxidizing any remaining protective film.

公开(公告)号：US10340143B1

公开(公告)日：2019-07-02

申请号：US16006786

申请日：2018-06-12

Applicant: Lam Research Corporation

Inventor： Chanyuan Liu ,  Shih-Ked Lee

IPC: H01L21/00 ,  H01L21/033 ,  H01L21/027 ,  H01L21/326 ,  H01L21/02 ,  H01L21/311

Abstract: A seed layer of aluminum is deposited over a wafer. A layer of photoresist material is deposited over the seed layer of aluminum. The photoresist material is patterned and developed to expose portions of the seed layer of aluminum through openings in the photoresist material. An electrochemical transformation process is performed on the wafer to electrochemically transform the portions of the seed layer of aluminum that are exposed through openings in the photoresist material into anodic aluminum oxide (AAO). The AAO includes a pattern of holes that extend through the AAO to expose areas of the top surface of the wafer beneath the seed layer of aluminum. The photoresist material is removed from the wafer. The wafer is exposed to a plasma to etch holes into the wafer at the areas of the top surface of the wafer that are exposed by the pattern of holes in the AAO.

公开(公告)号：US12249514B2

公开(公告)日：2025-03-11

申请号：US17439748

申请日：2020-03-16

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Karthik S. Colinjivadi ,  Francis Sloan Roberts ,  Kapu Sirish Reddy ,  Samantha Siamhwa Tan ,  Shih-Ked Lee ,  Eric Hudson ,  Todd Shroeder ,  Jialing Yang ,  Huifeng Zheng

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.

公开(公告)号：US20220282366A1

公开(公告)日：2022-09-08

申请号：US17753208

申请日：2020-08-28

Applicant: Lam Research Corporation

Inventor： Matthew Scott Weimer ,  Ragesh Puthenkovilakam ,  Gordon Alex Macdonald ,  Shaoqing Zhang ,  Shih-Ked Lee ,  Jun Xue ,  Samantha S.H. Tan ,  Xizhu Zhao ,  Mary Anne Manumpil ,  Eric A. Hudson ,  Chin-Jui Hsu

IPC: C23C16/26 ,  C23C16/04 ,  C23C16/40

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.