摘要:
The plasma shield device (13) comprises a hollow structure (40) made of monocrystal body of silicon carbide and having an inside space (40a) and a first and second openings (40b,40c) which are opposed to each other across the inside space. During operation of the plasma generation apparatus, the internal space of the hollow structure forms a discharge zone in which the plasma is generated. Discharge gas is supplied to the internal space of the hollow structure through the first opening and the EUV radiation is mainly emitted through the second opening.
摘要:
An image pickup apparatus includes a stage configured to support a sample at a plurality of support points, a bending data acquisition unit configured to acquire bending data corresponding to a bending of the sample supported on the stage, a height information detection unit configured to detect a height of the sample supported on the stage, a difference value calculation unit configured to calculate a difference value between a height indicated by height information and a height indicated by the bending data at each of a plurality of points on the sample, a correction data calculation unit configured to calculate correction data based on the difference value, and an estimation unit configured to calculate estimation data for estimating the height of the sample by correcting the bending data using the correction data.
摘要:
A correction method according to an embodiment includes illuminating an object to be inspected by using critical illumination by illumination light L11 generated by a light source 11, concentrating light from the object to be inspected illuminated by the illumination light L11 and acquiring image data of the object to be inspected by detecting the concentrated light by a first detector 23, concentrating part of the illumination light L11, and acquiring image data of a brightness distribution of the illumination light L11 by detecting the concentrated illumination light L11 by a second detector 33, and correcting the image data of the object to be inspected based on the image data of the brightness distribution.
摘要:
Provided are a mask inspection apparatus and a mask inspection method that can prevent a reduction in a reflectance of a drop-in mirror, which is caused by carbon contaminants. A mask inspection apparatus according to the present invention includes a drop-in mirror including multi-layer film and a reflective surface. The drop-in mirror is configured to reflect illumination light incident on the reflective surface and illuminate the mask. An area of the reflective surface is configured to be greater than an area of an illuminated spot irradiated with the illumination light on the reflective surface. The drop-in mirror is configured to be movable. A position of the illuminated spot on the reflective surface is configured to be moved when the drop-in mirror is moved.
摘要:
An inspection device according to the present disclosure includes a spheroidal mirror configured to reflect illumination light as convergent light, a plane mirror configured to reflect the illumination light incident as the convergent light and cause the reflected illumination light to be incident on an object of inspection as incident light, a projection optical system configured to focus reflected light of the incident light reflected by the object of inspection, and a detector configured to detect reflected light focused by the projection optical system, wherein an angle of incidence of an incident optical axis being an optical axis of the incident light on the object of inspection is greater than 6 [deg], an angle of reflection of a reflected optical axis being an optical axis of the reflected light on the object of inspection is greater than 6 [deg].
摘要:
A defect coordinates measurement method includes a step of detecting detected coordinates of a fiducial mark and a defect of a mask blank placed on support pins, a step of detecting detected coordinates of the alignment mark of a reference mask placed on the support pins, a step of extracting a reference mark near the detected coordinates of the defect among the plurality of reference marks based on the detected coordinates of the defect of the mask blank and the alignment mark of the reference mask, a step of detecting detected coordinates of the extracted reference mark, and a step of calculating coordinates of the defect based on the detected coordinates of the reference mark and the detected coordinates of the defect.