公开(公告)号：US20160155877A1

公开(公告)日：2016-06-02

申请号：US14953252

申请日：2015-11-27

Applicant: LG ELECTRONICS INC.

Inventor： Jin-won CHUNG ,  Yujin LEE ,  Kwangsun JI

IPC: H01L31/0747 ,  H01L31/20 ,  H01L31/0216

CPC classification number: H01L31/0747 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0264 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/546 ,  Y02E10/548

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate containing impurities of a first conductive type, a front surface field region which is positioned at a front surface of the semiconductor substrate, contains impurities of the first conductive type at a higher concentration than the semiconductor substrate, and has a crystal structure or a crystallinity different from the semiconductor substrate, an emitter region which is positioned at a back surface of the semiconductor substrate and has a second conductive type opposite the first conductive type, a back surface field region which is positioned at the back surface of the semiconductor substrate and contains impurities of the first conductive type at a higher concentration than the semiconductor substrate, a first electrode connected to the emitter region, and a second electrode connected to the back surface field region.

Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型的杂质的半导体衬底，位于半导体衬底的前表面的前表面场区域，包含比半导体衬底更高的浓度的第一导电类型的杂质，并且具有 与半导体衬底不同的晶体结构或结晶度，位于半导体衬底的后表面并且具有与第一导电类型相反的第二导电类型的发射极区域，位于后表面的背表面场区域 并且包含比半导体衬底更高的浓度的第一导电类型的杂质，连接到发射极区的第一电极和连接到背表面场区的第二电极。

公开(公告)号：US20190157495A1

公开(公告)日：2019-05-23

申请号：US16250681

申请日：2019-01-17

Applicant: LG ELECTRONICS INC.

Inventor： Kwangsun JI ,  Jin-won CHUNG ,  Yujin LEE

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0745

CPC classification number: H01L31/1872 ,  H01L31/02167 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a solar cell, includes forming an oxide layer on first surface of a single crystalline silicon substrate; forming a poly crystalline silicon layer doped with a first dopant having a first conductive type on the oxide layer; diffusing a second dopant having a second conductive type opposite to the first conductive type into a second surface of the single crystalline silicon substrate thereby forming a diffusion region; forming a first passivation layer on the poly crystalline silicon layer; forming a second passivation layer on the diffusion region; forming a first electrode connected to the poly crystalline silicon layer by printing a first paste on the first passivation layer and firing through; forming a second electrode connected to the diffusion region by printing a second paste on the second passivation layer and firing through.

公开(公告)号：US20160126400A1

公开(公告)日：2016-05-05

申请号：US14931591

申请日：2015-11-03

Applicant: LG ELECTRONICS INC.

Inventor： Kwangsun JI ,  Jin-won CHUNG ,  Yujin LEE

IPC: H01L31/077 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/1872 ,  H01L31/02167 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate containing impurities of a first conductive type, a tunnel layer positioned on the semiconductor substrate, an emitter region positioned on the tunnel layer and containing impurities of a second conductive type opposite the first conductive type, a dopant layer positioned on the emitter region and formed of a dielectric material containing impurities of the second conductive type, a first electrode connected to the semiconductor substrate, and a second electrode configured to pass through the dopant layer and connected to the emitter region.

Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括含有第一导电类型杂质的半导体衬底，位于半导体衬底上的隧道层，位于隧道层上的发射极区域，并且含有与第一导电类型相反的第二导电类型的杂质，位于 在发射极区域上并由含有第二导电类型的杂质的电介质材料形成，连接到半导体衬底的第一电极和被配置为穿过掺杂剂层并连接到发射极区域的第二电极。

公开(公告)号：US20190157496A1

公开(公告)日：2019-05-23

申请号：US16250694

申请日：2019-01-17

Applicant: LG ELECTRONICS INC.

Inventor： Kwangsun JI ,  Jin-won CHUNG ,  Yujin LEE

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0745

CPC classification number: H01L31/1872 ,  H01L31/02167 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a semiconductor substrate containing impurities of a first conductive type; a tunnel layer positioned on the semiconductor substrate; an emitter region positioned on the tunnel layer and containing impurities of a second conductive type opposite the first conductive type; a dopant layer positioned on the emitter region and formed of a dielectric material containing impurities of the second conductive type; a first electrode connected to the semiconductor substrate; and a second electrode configured to pass through the dopant layer, and connected to the emitter region.

公开(公告)号：US20160126368A1

公开(公告)日：2016-05-05

申请号：US14932755

申请日：2015-11-04

Applicant: LG ELECTRONICS INC.

Inventor： Yujin LEE ,  Jin-won CHUNG

IPC: H01L31/0216 ,  H01L31/075 ,  H01L31/0368

CPC classification number: H01L31/02167 ,  H01L31/022441 ,  H01L31/0328 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/074 ,  H01L31/075 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

Abstract: A solar cell is discussed. The solar cell according to an embodiment includes a semiconductor substrate containing impurities of a first conductive type, a metal oxide layer positioned on the semiconductor substrate, an emitter region positioned on the metal oxide layer and having a second conductive type opposite the first conductive type, a first electrode connected to the emitter region, and a second electrode connected to the semiconductor substrate.

Abstract translation: 讨论太阳能电池。 根据实施例的太阳能电池包括含有第一导电类型的杂质的半导体衬底，位于半导体衬底上的金属氧化物层，位于金属氧化物层上并具有与第一导电类型相反的第二导电类型的发射极区域， 连接到发射极区域的第一电极和连接到半导体衬底的第二电极。