Light emitting device having current blocking layer
    2.
    发明授权
    Light emitting device having current blocking layer 有权
    具有电流阻挡层的发光器件

    公开(公告)号:US09337236B2

    公开(公告)日:2016-05-10

    申请号:US14096138

    申请日:2013-12-04

    Abstract: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

    Abstract translation: 发光装置包括基板,发光单元,每个发光单元包括包括下半导体层和上半导体层的发光结构,上电极和下电极,导电互连层,电连接 发光单元中的第一个和第二个发光单元的上电极以及从上电极和上半导体层之间延伸设置的电流阻挡层,其中每个发光单元还包括导电层 布置成将第二发光单元的上电极电连接到第二发光单元的上半导体层。

    LIGHT EMITTING DEVICE
    4.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号:US20160225816A1

    公开(公告)日:2016-08-04

    申请号:US15092682

    申请日:2016-04-07

    Abstract: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

    Abstract translation: 发光装置包括基板,发光单元,每个发光单元包括包括下半导体层和上半导体层的发光结构,上电极和下电极,导电互连层,电连接 发光单元中的第一个和第二个发光单元的上电极以及从上电极和上半导体层之间延伸设置的电流阻挡层,其中每个发光单元还包括导电层 布置成将第二发光单元的上电极电连接到第二发光单元的上半导体层。

    Light emitting device and light emitting device package including series of light emitting regions
    5.
    发明授权
    Light emitting device and light emitting device package including series of light emitting regions 有权
    发光器件和包括一系列发光区域的发光器件封装

    公开(公告)号:US09165977B2

    公开(公告)日:2015-10-20

    申请号:US13662348

    申请日:2012-10-26

    CPC classification number: H01L27/156 H01L33/382 H01L33/46 H01L2224/13

    Abstract: Disclosed is a light emitting device including a light emitting structure including a plurality of light emitting regions comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first distributed bragg reflective layer disposed on the light emitting regions, a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions, a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions, an intermediate pad disposed on the first semiconductor layer or the second semiconductor layer in at least still another of the light emitting regions, and at least one connection electrode disposed on the first distributed bragg reflective layer such that the connection electrode sequentially connects the light emitting regions in series.

    Abstract translation: 公开了一种发光器件,其包括发光结构,该发光结构包括多个发光区域,包括第一半导体层,有源层和第二半导体层,设置在发光区域上的第一分布式布拉格反射层,第一电极单元 设置在一个发光区域中的第一半导体层上的第二电极单元,设置在另一个发光区域中的第二半导体层上的第二电极单元,至少静止地设置在第一半导体层或第二半导体层上的中间焊盘 另一个发光区域,以及设置在第一分布式布拉格反射层上的至少一个连接电极,使得连接电极依次顺序连接发光区域。

    Light emitting device
    6.
    发明授权

    公开(公告)号:US10128412B2

    公开(公告)日:2018-11-13

    申请号:US15134145

    申请日:2016-04-20

    Abstract: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

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