中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.018 seconds)

    LIGHT EMITTING DEVICE
    1.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150021638A1

    公开(公告)日：2015-01-22

    申请号：US14336574

    申请日：2014-07-21

    Applicant: LG INNOTEK CO., LTD.

    Inventor： So Yeong OH ,  Byung Yeon CHOI ,  Ji Hwan LEE

    IPC: H01L27/15 ,  H01L33/38

    CPC classification number: H01L27/156 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: Disclosed is a light emitting device comprising a plurality of light emitting cells, and a bridge electrode electrically connecting two adjacent light emitting cells, and the plurality of light emitting cells comprise a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode on the first conductive semiconductor layer and a second electrode on the second conductive semiconductor layer, wherein the bridge electrode has a part thicker than the first electrode and the second electrode.

    Abstract translation: 公开了一种包括多个发光单元的发光器件和电连接两个相邻的发光单元的桥电极，并且多个发光单元包括发光结构，该发光结构包括第一导电半导体层，第二导电半导体层 以及在所述第一导电半导体层和所述第二导电半导体层之间的有源层，所述第一导电半导体层上的第一电极和所述第二导电半导体层上的第二电极，其中所述桥接电极具有比所述第一电极更厚的部分， 第二电极。

    LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME
    3.
    发明申请
    LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20190081208A1

    公开(公告)日：2019-03-14

    申请号：US16074697

    申请日：2017-02-02

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Byung Yeon CHOI

    IPC: H01L33/14 ,  H01L33/32 ,  H01L33/06 ,  H01L33/10 ,  H01L33/62 ,  H01L33/36

    Abstract: An embodiment of a light emitting device includes a substrate; a first conductivity-type semiconductor layer disposed on the substrate; an active layer disposed on the first conductivity-type semiconductor layer, a plurality of quantum well layers and a plurality of quantum barrier layers being alternately stacked in the active layer; a second conductivity-type semiconductor layer disposed on the active layer; a contact layer disposed on the second conductivity-type semiconductor layer; a current spreading layer disposed on the contact layer; and a current blocking layer disposed on the second conductivity-type semiconductor layer, wherein the contact layer and/or the current spreading layer is formed to surround at least a portion of the current blocking layer and a maximum value of intensity of a diffracted X-ray beam when a Miller plane index is 400.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PACKAGE
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PACKAGE 有权

    公开(公告)号：US20210135059A1

    公开(公告)日：2021-05-06

    申请号：US16492069

    申请日：2018-01-18

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Chang Hyeong LEE ,  Gyu Hyeong BAK ,  Yong Seon SONG ,  Byung Yeon CHOI ,  Sung Min HWANG

    IPC: H01L33/46 ,  H01L33/38 ,  H01L33/62

    Abstract: A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening. The second bonding pad may be electrically connected to the second electrode through the second opening.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PACKAGE
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PACKAGE 审中-公开

    公开(公告)号：US20190341536A1

    公开(公告)日：2019-11-07

    申请号：US16480924

    申请日：2017-12-27

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Byung Yeon CHOI ,  Chang Hyeong LEE ,  Sung Min HWANG

    IPC: H01L33/62 ,  H01L23/00 ,  H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01L33/60 ,  C22C13/00 ,  B23K35/26

    Abstract: A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

Patent Agency Ranking