Abstract:
A light emitting device according to an embodiment includes a substrate; first to Mth light emitting cells (where M is a positive integer of two or more) which are arranged on the substrate so as to be spaced apart from each other; and first to (M−1)th interconnection wires which electrically connect the first to Mth light emitting cells in series, wherein an mth light emitting cell (where 1≤m≤M) includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, which are sequentially arranged on the substrate, and wherein an nth interconnection wire (where 1≤n≤M−1) interconnects the first conductive type semiconductor of the nth light emitting cell with the second conductive type semiconductor of the (n+1)th light emitting cell, and has a plurality of first branch wires which are spaced apart from each other.
Abstract:
A light emitting device includes a light emitting structure having a plurality of light emitting regions including a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode in one of the light emitting regions, a second electrode in another of the light emitting regions, and at least one connection electrode to sequentially connect the light emitting regions in series. The light emitting regions connected in series are divided into 1st to ith light emitting region groups. Areas of light emitting regions that belong to different groups are different. An area of a light emitting region which is more frequently used among the plurality of light emitting regions is larger than an area of a light emitting region which is less frequently used among the plurality of light emitting regions.
Abstract:
A light emitting device includes a light emitting structure having a plurality of light emitting regions including a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode in one of the light emitting regions, a second electrode in another of the light emitting regions, and at least one connection electrode to sequentially connect the light emitting regions in series. The light emitting regions connected in series are divided into 1st to ith light emitting region groups. Areas of light emitting regions that belong to different groups are different. An area of a light emitting region which is more frequently used among the plurality of light emitting regions is larger than an area of a light emitting region which is less frequently used among the plurality of light emitting regions.
Abstract:
Disclosed is a semiconductor light emitting device. The light emitting device includes a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; and a first electrode pad including a plurality of reflective layers on the first conductive type semiconductor layer.
Abstract:
A light emitting device including a light emitting structure comprising a plurality of light emitting regions comprising a first semiconductor layer, an active layer and a second semiconductor layer, a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions, a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions, and at least one connection electrode to sequentially connect the light emitting regions in series, wherein the light emitting regions connected in series are divided into 1st to ith light emitting region groups and areas of light emitting regions that belong to different groups are different (where 1
Abstract:
Disclosed is a light emitting device including: a light emitting structure including a plurality of light emitting regions including a first semiconductor layer, an active layer and a second semiconductor layer; a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions; a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions; an intermediate pad disposed on the second semiconductor layer in at least still another of the light emitting regions; and at least one connection electrode to sequentially connect the light emitting regions in series, wherein the light emitting regions connected in series are divided into 1st to ith light emitting region groups and areas of light emitting regions that belong to different groups are different (where 1
Abstract:
A light-emitting device includes a substrate, first and second electrode pads, first to M-th light-emitting cells arranged in a line in a first direction between the first and second electrode pads, and first to N-th connection wires for electrically connecting the first to M-th light-emitting cells, wherein each of the first to M-th light-emitting cells comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, wherein the first electrode pad is connected to the second conductive semiconductor layer of the first light-emitting cell while the second electrode pad is connected to the first conductive semiconductor layer of the M-th light-emitting cell, and an n-th connection wire electrically connects the first conductive semiconductor layer of an n-th light-emitting cell to the second conductive semiconductor layer of an (n+1)-th light-emitting cell, which are adjacent to each other.
Abstract:
Disclosed is a light emitting device including a plurality of light emitting cells disposed on a substrate, at least one connection electrode for connecting the light emitting cells, and a first insulating layer disposed between adjacent light emitting cells, wherein each of the light emitting cells includes a light emitting structure including first and second conductive type semiconductor layers and an active layer, and a reflective layer disposed on the second conductive type semiconductor layer, wherein the connection electrode connects the first conductive type semiconductor layer of a first one of the adjacent light emitting cells to the reflective layer of a second one at the adjacent light emitting cells, and wherein a first width of the second conductive type semiconductor layer is the same as or greater than a second width of the reflective layer, and the first direction differs from a thickness direction of the light emitting structure.
Abstract:
Disclosed are a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and a lighting system. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a contact layer on the second conductive semiconductor layer; an insulating layer on the contact layer; a first branch electrode electrically connected to the first conductive semiconductor layer; a plurality of first via electrodes connected to the first branch electrode and electrically connected to the first conductive semiconductor layer by passing through the insulating layer; a first pad electrode electrically connected to the first branch electrode; a second pad electrode contacts the contact layer by passing through the insulating layer; a second branch electrode connected to the second pad electrode and disposed on the insulating layer; and a plurality of second via electrodes provided through the insulating layer to electrically connect the second branch electrode to the contact layer.
Abstract:
Disclosed is a light emitting device including a light emitting structure including a plurality of light emitting regions including a first semiconductor layer, an active layer and a second semiconductor layer, and a plurality of boundary regions disposed between the light emitting regions, a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions, a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions, at least one connection electrode to electrically connect the first semiconductor layer of one of adjacent light emitting regions to the second semiconductor layer of the other thereof, and an intermediate pad disposed on the first semiconductor layer or the second semiconductor layer in at least one of the light emitting regions, wherein the light emitting regions are connected in series through the connection electrode.