公开(公告)号：US20030123607A1

公开(公告)日：2003-07-03

申请号：US10309279

申请日：2002-12-04

Applicant: LG.PHILIPS LCD CO., LTD.

Inventor： Binn Kim ,  Hyun Ja Kwon ,  Kyu Ho Park

IPC: G01T001/36

CPC classification number: G01N23/223 ,  G01N2223/076

Abstract: A method for making a quantitative analysis of nickel that includes the steps of providing an amorphous silicon layer, forming an insulating film on the amorphous silicon layer, depositing nickel on the insulating film, etching a defined portion of the nickel with an etchant to create a specimen, drying the specimen on an AP1 film and subjecting the dried specimen to energy dispersive X-ray fluorescence analysis.

Abstract translation: 一种镍的定量分析方法，包括提供非晶硅层，在非晶硅层上形成绝缘膜的步骤，在绝缘膜上沉积镍，用蚀刻剂蚀刻镍的限定部分以产生 样品，在AP1膜上干燥样品，并对干燥的样品进行能量色散X射线荧光分析。

公开(公告)号：US20030124779A1

公开(公告)日：2003-07-03

申请号：US10319636

申请日：2002-12-16

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Hyun-Sik Seo ,  Binn Kim

IPC: H01L021/00 ,  H01L021/302 ,  H01L021/461

CPC classification number: H01L21/02672 ,  H01L21/2022 ,  H01L21/32134 ,  H01L21/32139 ,  H01L29/66757 ,  H01L29/78675

Abstract: A fabricating method of a polycrystalline silicon thin film transistor includes forming a polycrystalline silicon layer on a substrate having first and second regions through a crystallization process using nickel silicide (NiSix) as a catalyst, patterning the polycrystalline silicon layer to form an active layer at the first region, leaving a nickel silicide residue at the second region, etching the nickel silicide residue with a solution including hydrofluoric acid (HF) and hydrogen peroxide (H2O2), forming a gate electrode over the active layer and forming a source and drain in the active layer.

Abstract translation: 多晶硅薄膜晶体管的制造方法包括通过使用硅化镍（NiSix）作为催化剂的结晶工艺在具有第一和第二区域的基板上形成多晶硅层，图案化多晶硅层以形成活性层 在第二区域留下镍硅化物残留物，用包含氢氟酸（HF）和过氧化氢（H 2 O 2）的溶液蚀刻硅化镍残渣，在有源层上形成栅电极，并形成源极和漏极 活动层

公开(公告)号：US20020086469A1

公开(公告)日：2002-07-04

申请号：US09998311

申请日：2001-12-03

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Binn Kim ,  Hae Yeol Kim ,  Dae Hyun Nam

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L21/02672 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method for fabricating a thin film transistor includes forming a buffer layer on a substrate, forming a first amorphous silicon layer on the buffer layer, forming a plurality of metal clusters on the first amorphous silicon layer, forming a second amorphous silicon layer on the metal clusters including the first amorphous silicon layer, and simultaneously applying a heat-treatment and an electrical field to crystallize the first and the second amorphous silicon layers.

Abstract translation: 一种制造薄膜晶体管的方法，包括在衬底上形成缓冲层，在缓冲层上形成第一非晶硅层，在第一非晶硅层上形成多个金属簇，在金属上形成第二非晶硅层 包括第一非晶硅层的簇，并且同时施加热处理和电场以使第一和第二非晶硅层结晶。

公开(公告)号：US20020177283A1

公开(公告)日：2002-11-28

申请号：US10140288

申请日：2002-05-08

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Kwang Jo Hwang ,  Binn Kim ,  Hae Yeol Kim ,  Jong Uk Bae

IPC: C23C014/00

CPC classification number: H01L21/02672 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757

Abstract: A method of forming polycrystalline silicon for a liquid crystal display device is disclosed in the present invention. The method includes forming an amorphous silicon layer on a substrate, forming a plurality of catalytic metal clusters on the amorphous silicon layer, forming a catalytic metal gettering layer adjacent to the amorphous silicon layer, and heat-treating the substrate including the amorphous silicon layer to transform the amorphous silicon layer into a polycrystalline silicon layer, wherein unreacted catalytic metal clusters migrate to the catalytic metal gettering layer in a direction perpendicular to the substrate.

Abstract translation: 在本发明中公开了一种用于液晶显示装置的多晶硅形成方法。 该方法包括在衬底上形成非晶硅层，在非晶硅层上形成多个催化金属簇，形成与非晶硅层相邻的催化金属吸气层，并将包含非晶硅层的衬底热处理为 将非晶硅层转变成多晶硅层，其中未反应的催化金属簇沿垂直于衬底的方向迁移到催化金属吸气层。

公开(公告)号：US20020086468A1

公开(公告)日：2002-07-04

申请号：US09998338

申请日：2001-12-03

Applicant: LG.Philips LCD Co., Ltd.

Inventor： Hae-Yeol Kim ,  Binn Kim ,  Joon-Young Yang ,  Sang-Soo Han

IPC: H01L021/00

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

Abstract: The present invention discloses a method of crystallizing amorphous silicon using a metal catalyst. More specifically, the method includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon film, forming a heat insulating layer on the amorphous silicon layer including the metal clusters, disposing a pair of electrodes on the heat insulating layer, simultaneously applying a thermal treatment and a voltage to crystallize the amorphous silicon, and removing the heat insulating layer including the electrodes from the substrate.

Abstract translation: 本发明公开了一种使用金属催化剂使非晶硅结晶的方法。 更具体地说，该方法包括在衬底上形成非晶硅层，在非晶硅膜上形成多个金属簇，在包括金属簇的非晶硅层上形成隔热层，在电极上设置一对电极 绝缘层，同时施加热处理和电压以使非晶硅结晶，以及从基板去除包括电极的隔热层。