公开(公告)号：US20240030028A1

公开(公告)日：2024-01-25

申请号：US18256893

申请日：2021-12-13

Applicant: Lam Research Corporation

Inventor： Abbin Antony ,  Xin Meng ,  Xinyi Chen ,  Sreeram Sonti ,  Kapu Sirish Reddy

IPC: H01L21/027 ,  H01J37/32 ,  H01L21/02 ,  H01L21/308 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458 ,  C23C16/56 ,  C23C16/52 ,  C23C16/26

CPC classification number: H01L21/027 ,  H01J37/32715 ,  H01L21/02274 ,  H01L21/3081 ,  C23C16/50 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/56 ,  C23C16/52 ,  C23C16/26 ,  C23C16/45512 ,  C23C16/45561 ,  H01J2237/20235 ,  H01J2237/3321

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by providing a wide gap electrode spacing in low-pressure conditions. A wide gap electrode may facilitate control of parasitic plasmas in low-pressure conditions, thereby enabling formation of high selectivity, low stress, and low-hydrogen AHMs. The AHM may then be used to etch features into underlying layers of the substrate.