公开(公告)号：US20150093908A1

公开(公告)日：2015-04-02

申请号：US14248046

申请日：2014-04-08

Applicant: Lam Research Corporation

Inventor： Sirish K. Reddy ,  Chunhai Ji ,  Xinyi Chen ,  Pramod Subramonium

IPC: H01L21/033

CPC classification number: H01L21/0332 ,  C23C16/505 ,  C23C16/515 ,  H01L21/02115 ,  H01L21/02274

Abstract: Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio frequency plasma source. According to various embodiments, the low frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off. The resulting deposited highly selective ashable hard mask may have decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask.

Abstract translation: 提供了使用等离子体增强化学气相沉积形成高蚀刻选择性的低应力可吸收硬掩模的方法。 在某些实施例中，所述方法包括在使用双射频等离子体源沉积可灰化硬掩模的过程中脉冲低频射频功率同时保持高频射频功率恒定。 根据各种实施例，低频射频功率可以在非零电平之间进行脉冲，或通过切换电源接通和断开。 所产生的沉积的高度选择性的可硬化硬掩模可能由于一个或多个因素而具有降低的应力，包括降低的可吸收硬掩模上的离子和原子撞击，以及在可灰化硬掩模中捕获的较低水平的氢。

公开(公告)号：US20250022696A1

公开(公告)日：2025-01-16

申请号：US18712902

申请日：2021-11-23

Applicant: Lam Research Corporation

Inventor： Xin Meng ,  Xinyi Chen ,  Sreeram Sonti ,  Kevin Bertsch ,  Defu Liang ,  Zhuozhi Chen ,  Rohit Ode ,  William Schlosser ,  Tongtong Guo ,  Rachel E. Batzer

IPC: H01J37/32

Abstract: Systems and methods for redirecting cleaning chemistry flows within a multi-station semiconductor processing chamber are disclosed. In such systems, a cleaning chemistry flow, e.g., a plasma from a remote plasma generator, may be directed onto a hub of an indexer that is centrally mounted within the chamber. The hub may have features that cause the cleaning chemistry flows to be redirected in a radially outward direction. By rotating the hub and/or changing the relative elevational positions between the hub and a cleaning chemistry inlet that provides the cleaning chemistry, the cleaning chemistry may be redirected into different regions of the chamber, thereby allowing for a more thorough and complete cleaning process.

公开(公告)号：US20240030028A1

公开(公告)日：2024-01-25

申请号：US18256893

申请日：2021-12-13

Applicant: Lam Research Corporation

Inventor： Abbin Antony ,  Xin Meng ,  Xinyi Chen ,  Sreeram Sonti ,  Kapu Sirish Reddy

IPC: H01L21/027 ,  H01J37/32 ,  H01L21/02 ,  H01L21/308 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458 ,  C23C16/56 ,  C23C16/52 ,  C23C16/26

CPC classification number: H01L21/027 ,  H01J37/32715 ,  H01L21/02274 ,  H01L21/3081 ,  C23C16/50 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/56 ,  C23C16/52 ,  C23C16/26 ,  C23C16/45512 ,  C23C16/45561 ,  H01J2237/20235 ,  H01J2237/3321

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by providing a wide gap electrode spacing in low-pressure conditions. A wide gap electrode may facilitate control of parasitic plasmas in low-pressure conditions, thereby enabling formation of high selectivity, low stress, and low-hydrogen AHMs. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US09589799B2

公开(公告)日：2017-03-07

申请号：US14248046

申请日：2014-04-08

Applicant: Lam Research Corporation

Inventor： Sirish K. Reddy ,  Chunhai Ji ,  Xinyi Chen ,  Pramod Subramonium

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/505 ,  C23C16/515

CPC classification number: H01L21/0332 ,  C23C16/505 ,  C23C16/515 ,  H01L21/02115 ,  H01L21/02274

Abstract: Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio frequency plasma source. According to various embodiments, the low frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off. The resulting deposited highly selective ashable hard mask may have decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask.

Abstract translation: 提供了使用等离子体增强化学气相沉积形成高蚀刻选择性的低应力可吸收硬掩模的方法。 在某些实施例中，所述方法包括在使用双射频等离子体源沉积可灰化硬掩模的过程中脉冲低频射频功率同时保持高频射频功率恒定。 根据各种实施例，低频射频功率可以在非零电平之间进行脉冲，或通过切换电源接通和断开。 所产生的沉积的高度选择性的可硬化硬掩模可能由于一个或多个因素而具有降低的应力，包括降低的可吸收硬掩模上的离子和原子撞击，以及在可灰化硬掩模中捕获的较低水平的氢。