公开(公告)号：US20240030028A1

公开(公告)日：2024-01-25

申请号：US18256893

申请日：2021-12-13

Applicant: Lam Research Corporation

Inventor： Abbin Antony ,  Xin Meng ,  Xinyi Chen ,  Sreeram Sonti ,  Kapu Sirish Reddy

IPC: H01L21/027 ,  H01J37/32 ,  H01L21/02 ,  H01L21/308 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458 ,  C23C16/56 ,  C23C16/52 ,  C23C16/26

CPC classification number: H01L21/027 ,  H01J37/32715 ,  H01L21/02274 ,  H01L21/3081 ,  C23C16/50 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/56 ,  C23C16/52 ,  C23C16/26 ,  C23C16/45512 ,  C23C16/45561 ,  H01J2237/20235 ,  H01J2237/3321

Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by providing a wide gap electrode spacing in low-pressure conditions. A wide gap electrode may facilitate control of parasitic plasmas in low-pressure conditions, thereby enabling formation of high selectivity, low stress, and low-hydrogen AHMs. The AHM may then be used to etch features into underlying layers of the substrate.

公开(公告)号：US20250112040A1

公开(公告)日：2025-04-03

申请号：US18832926

申请日：2023-01-30

Applicant: Lam Research Corporation

Inventor： Xin Meng ,  Defu Liang ,  Hu Kang ,  Joseph Lindsey Womack ,  Ming Li

IPC: H01L21/02 ,  C23C16/52

Abstract: A process chamber and method of modulating thin film growth on a wafer using a plasma-enhanced chemical vapor deposition (PECVD) process is described. During a first deposition phase, a first portion of a film is disposed on a wafer on a pedestal in a process chamber. During a second deposition phase, a second portion of the film is deposited on the wafer. The wafer is unclamped from the pedestal prior to the first and/or second deposition phase and remains unclamped during the first and/or second deposition phase. The wafer has a non-zero wafer bow during unclamped deposition phase to provide a radially non-uniform thickness profile of the film on the wafer.

公开(公告)号：US20250022696A1

公开(公告)日：2025-01-16

申请号：US18712902

申请日：2021-11-23

Applicant: Lam Research Corporation

Inventor： Xin Meng ,  Xinyi Chen ,  Sreeram Sonti ,  Kevin Bertsch ,  Defu Liang ,  Zhuozhi Chen ,  Rohit Ode ,  William Schlosser ,  Tongtong Guo ,  Rachel E. Batzer

IPC: H01J37/32

Abstract: Systems and methods for redirecting cleaning chemistry flows within a multi-station semiconductor processing chamber are disclosed. In such systems, a cleaning chemistry flow, e.g., a plasma from a remote plasma generator, may be directed onto a hub of an indexer that is centrally mounted within the chamber. The hub may have features that cause the cleaning chemistry flows to be redirected in a radially outward direction. By rotating the hub and/or changing the relative elevational positions between the hub and a cleaning chemistry inlet that provides the cleaning chemistry, the cleaning chemistry may be redirected into different regions of the chamber, thereby allowing for a more thorough and complete cleaning process.