公开(公告)号：US10566194B2

公开(公告)日：2020-02-18

申请号：US15972918

申请日：2018-05-07

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Kapu Sirish Reddy ,  Jon Henri ,  Pengyi Zhang ,  Elham Mohimi ,  Bhavin Jariwala ,  Arpan Pravin Mahorowala

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/02 ,  C23C16/455 ,  H01L21/67 ,  C23F1/08

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

公开(公告)号：US20210358753A1

公开(公告)日：2021-11-18

申请号：US17389301

申请日：2021-07-29

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Kapu Sirish Reddy ,  Jon Henri ,  Pengyi Zhang ,  Elham Mohimi ,  Bhavin Jariwala ,  Arpan Pravin Mahorowala

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  H01L21/027 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3105

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap tilling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

公开(公告)号：US20200168466A1

公开(公告)日：2020-05-28

申请号：US16744022

申请日：2020-01-15

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Kapu Sirish Reddy ,  Jon Henri ,  Pengyi Zhang ,  Elham Mohimi ,  Bhavin Jariwala ,  Arpan Pravin Mahorowala

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/67 ,  C23C16/455 ,  C23C16/40

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

公开(公告)号：US20190341256A1

公开(公告)日：2019-11-07

申请号：US15972918

申请日：2018-05-07

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Kapu Sirish Reddy ,  Jon Henri ,  Pengyi Zhang ,  Elham Mohimi ,  Bhavin Jariwala ,  Arpan Pravin Mahorowala

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/02

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

公开(公告)号：US11869770B2

公开(公告)日：2024-01-09

申请号：US17389301

申请日：2021-07-29

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Kapu Sirish Reddy ,  Jon Henri ,  Pengyi Zhang ,  Elham Mohimi ,  Bhavin Jariwala ,  Arpan Pravin Mahorowala

IPC: H01L21/033 ,  H01L21/02 ,  C23C16/455 ,  H01L21/308 ,  H01L21/311 ,  C23C16/40 ,  H01L21/027 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/67 ,  C23F1/08

CPC classification number: H01L21/0337 ,  C23C16/401 ,  C23C16/403 ,  C23C16/45536 ,  C23C16/45544 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/02115 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/30604 ,  H01L21/31058 ,  H01L21/31122 ,  H01L21/31144 ,  C23F1/08 ,  H01L21/67069

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

公开(公告)号：US11094542B2

公开(公告)日：2021-08-17

申请号：US16744022

申请日：2020-01-15

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Kapu Sirish Reddy ,  Jon Henri ,  Pengyi Zhang ,  Elham Mohimi ,  Bhavin Jariwala ,  Arpan Pravin Mahorowala

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  H01L21/027 ,  H01L21/308 ,  C23F1/08

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.