公开(公告)号：US5049753A

公开(公告)日：1991-09-17

申请号：US549885

申请日：1990-06-28

Applicant: Larry D. Flesner

Inventor： Larry D. Flesner

IPC: H01J3/02 ,  H01J27/00 ,  H01J37/073 ,  H01J37/248 ,  H02J17/00 ,  H05H5/00

CPC classification number: H02J17/00 ,  H01J27/00 ,  H01J3/021 ,  H01J37/073 ,  H01J37/248 ,  H05H5/00 ,  H01J2201/342

Abstract: A charged particle control apparatus provides very high voltage particle beams. One or more photocell arrays provide bias voltages for beam accelerating stages. The arrays are made from a number of microfabricated photocells connected in series to produce a voltage output that is the sum of the voltages from the individual cells. Arrays of each stage are connected in series to produce a cumulative stage voltage that is applied to an accelerating electrode made part of the stage.These accelerating stages are disposed within a transparent vacuum chamber and are spaced from a charged particle source stage disposed near one end of the chamber. This charged particle source stage includes an emission source such as a photocathode. The photo arrays of the accelerating stages are connected in series to produce a potential that is applied to the particle source stage.Optical power illuminates the stages to generate desired voltage biases to the accelerating electrodes. A light source is used to excite the photocathode when this emission source is used. Electrons from the emission source are accelerated by the accelerating electrodes and are emitted from the chamber which is typically conjoined with other apparatus.By utilizing photocell arrays to generate beam current and accelerating biases, as well as a photocathode for providing a source of electrons, the apparatus of the invention is completely optically isolated thereby requiring no direct electrical connections to the apparatus even though multiple accelerating stages are used to facilitate the achievement of very high voltage particle beams.

Abstract translation: 带电粒子控制装置提供非常高电压的粒子束。 一个或多个光电池阵列为光束加速阶段提供偏置电压。 阵列由多个串联连接的微细胞光电池制成，以产生电压输出，该电压输出是来自各个单元的电压之和。 每个级的阵列串联连接以产生累加级电压，该电压施加到制成该级的一部分的加速电极。 这些加速阶段设置在透明真空室内并与设置在室的一端附近的带电粒子源级间隔开。 该带电粒子源级包括诸如光电阴极的发射源。 加速级的光阵列被串联连接以产生施加到粒子源级的电位。 光功率照亮阶段以产生对加速电极的期望的电压偏压。 当使用该发射源时，使用光源来激发光电阴极。 来自发射源的电子被加速电极加速并且从通常与其他装置结合的室发射。 通过利用光电池阵列产生射束电流和加速偏置，以及用于提供电子源的光电阴极，本发明的装置是完全光学隔离的，因此即使使用多个加速阶段也不需要与设备的直接电连接 有助于实现非常高电压的粒子束。

公开(公告)号：USH1423H

公开(公告)日：1995-04-04

申请号：US988551

申请日：1992-12-10

Applicant: Larry D. Flesner ,  Graham A. Garcia ,  George P. Imthurn

Inventor： Larry D. Flesner ,  Graham A. Garcia ,  George P. Imthurn

IPC: H01L21/329 ,  H01L21/86 ,  H01L29/00

CPC classification number: H01L29/6609 ,  H01L21/86

Abstract: The present invention provides a method for fabricating a silicon-on-insulator voltage multiplier. The method comprises the steps of: forming a first silicon layer having a first concentration of a first dopant with a first polarity on a silicon wafer having a second concentration of a second dopant with a second polarity opposite the first polarity to create a diode junction; forming a second silicon layer on the first silicon layer, the second silicon layer having a third concentration of a third dopant having the first polarity, where the third concentration is greater than the first concentration of the first dopant; forming a silicon dioxide layer on the second silicon layer by thermal oxidation; bonding an insulating substrate to the silicon dioxide layer to create a bonded wafer, where the insulating substrate is selected from the group consisting of quartz, glass, sapphire, and silicon dioxide on silicon; thinning the silicon wafer to form a thinned silicon layer; etching the bonded wafer to form a plurality of separate diodes having sloped sidewalls and to expose selected regions of the insulating substrate; forming an insulating silicon layer on the selected regions of the insulating substrate and on the separate diodes; exposing selected regions of the thinned silicon layer and regions of the second silicon layer of each of the diodes; and forming metal interconnects between the exposed selected regions of the thinned silicon layer of one of the diodes with the silicon layer of another of the diodes.

Abstract translation: 本发明提供了一种制造绝缘体上硅电压倍增器的方法。 该方法包括以下步骤：在具有第二极性与第一极性相反的第二掺杂剂的第二浓度的硅晶片上形成具有第一极性的第一掺杂剂的第一浓度的第一硅层以产生二极管结; 在第一硅层上形成第二硅层，第二硅层具有具有第一极性的第三掺杂剂的第三浓度，其中第三浓度大于第一掺杂剂的第一浓度; 通过热氧化在所述第二硅层上形成二氧化硅层; 将绝缘衬底接合到二氧化硅层以形成键合晶片，其中绝缘衬底选自硅上的石英，玻璃，蓝宝石和二氧化硅; 使硅晶片变薄以形成薄的硅层; 蚀刻所述结合的晶片以形成具有倾斜侧壁并且暴露所述绝缘基板的选定区域的多个分离的二极管; 在所述绝缘基板的选定区域上和所述分离的二极管上形成绝缘硅层; 暴露所述薄化硅层的选定区域和每个二极管的第二硅层的区域; 以及在一个二极管的薄化硅层的暴露的选定区域与另一个二极管的硅层之间形成金属互连。

公开(公告)号：US5248931A

公开(公告)日：1993-09-28

申请号：US745045

申请日：1991-07-31

Applicant: Larry D. Flesner ,  Wadad B. Dubbelday

Inventor： Larry D. Flesner ,  Wadad B. Dubbelday

IPC: H01L31/042 ,  H01L31/18 ,  H02N6/00

CPC classification number: H01L31/1804 ,  H01L31/042 ,  H01L31/16 ,  H02S99/00 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S323/906

Abstract: A light energized high voltage direct current power supply comprises a li source including solid-state laser diodes powered by electrical current at a voltage level, V.sub.1, for generating light; a photocell array positioned to receive the light and fabricated with silicon-on-sapphire for providing electrical power having an output voltage V.sub.2, where V.sub.2 >V.sub.1, where the photocell array includes serially connected photovoltaic cells; and a voltage regulator operably coupled to the light source and the photocell array for controlling the output of the power supply to a predetermined voltage level.

Abstract translation: 光通电的高压直流电源包括光源，其包括由电压V1供电的固态激光二极管，用于产生光; 光电池阵列，定位成接收光并用蓝宝石上的硅制造，用于提供具有输出电压V2的电功率，其中V2> V1，其中光电池阵列包括串联连接的光伏电池; 以及可操作地耦合到光源和光电池阵列的电压调节器，用于将电源的输出控制到预定的电压电平。

公开(公告)号：US5150043A

公开(公告)日：1992-09-22

申请号：US653829

申请日：1991-02-11

Applicant: Larry D. Flesner

Inventor： Larry D. Flesner

IPC: G01R31/308

CPC classification number: B82Y15/00 ,  G01R31/308

Abstract: An apparatus and method for non-contact sensing electrical potentials of selected regions on the surface of a sample are provided. A typical sample is an integrated circuit, electronic device, or semiconductor material. The sample is positioned within a vacuum chamber and irradiated with an ultraviolet light beam so that the material emits electrons by the photoelectric effect. The electrons have kinetic energies which are variable according to the electrical potential of the surface of the material. Emitted electrons having kinetic energies within a predetermined range are selected by an electron energy analyzer. An electron detector receives the selected electrons and produces electrical signals corresponding to the energies of said selected electrons. In another embodiment of the invention, a modulated light beam other than the ultraviolet light probe beam irradiates the material in order to produce time varying modulation of the photoelectron energy spectrum.

Abstract translation: 提供了一种用于在接触表面上非接触检测电位的装置和方法。 典型的样品是集成电路，电子器件或半导体材料。 将样品置于真空室内并用紫外光束照射，使得材料通过光电效应发射电子。 电子具有根据材料表面的电位而变化的动能。 通过电子能量分析仪选择具有预定范围内的动能的发射电子。 电子检测器接收所选择的电子并产生对应于所选择的电子的能量的电信号。 在本发明的另一个实施例中，除了紫外光探针光束之外的调制光束照射材料以便产生光电子能谱的时变调制。

公开(公告)号：USH111H

公开(公告)日：1986-08-05

申请号：US806573

申请日：1985-11-21

Applicant: Larry D. Flesner

Inventor： Larry D. Flesner

IPC: G01R31/308 ,  H01L31/08

CPC classification number: G01R31/308 ,  H01L31/08

Abstract: A method is disclosed for determining characteristics of semi-insulating lium arsenide that can be used to evaluate the suitability of the material for semiconductor processing. An n-channel test device formed on a substrate of semi-insulating gallium arsenide is illuminated with pulses of light. The decay in the photoconductance that occurs due to the illumination is measured in order to enable characterization of the shallow acceptor impurities which compensate the deep donors in the semi-insulating gallium arsenide.

公开(公告)号：US5330918A

公开(公告)日：1994-07-19

申请号：US938920

申请日：1992-08-31

Applicant: Wadad B. Dubbelday ,  Larry D. Flesner ,  George P. Imthurn

Inventor： Wadad B. Dubbelday ,  Larry D. Flesner ,  George P. Imthurn

IPC: H01L27/142 ,  H01L31/18

CPC classification number: H01L31/0475 ,  Y02E10/50 ,  Y10S148/012 ,  Y10S438/977

Abstract: A method is provided for forming a multi-cell photovoltaic circuit on an insulating substrate, comprising the steps of: forming a photovoltaic junction between p-type and n-type layers in a silicon wafer; bonding the silicon wafer to an insulating substrate after forming the photovoltaic junction; patterning the silicon wafer to produce isolated photovoltaic cells; and electrically interconnecting the photovoltaic cells.

Abstract translation: 提供一种用于在绝缘基板上形成多单元光伏电路的方法，包括以下步骤：在硅晶片中形成p型和n型层之间的光伏结; 在形成光伏结之后将硅晶片接合到绝缘衬底; 图案化硅晶片以产生隔离的光伏电池; 并且电连接光伏电池。

公开(公告)号：US5196690A

公开(公告)日：1993-03-23

申请号：US721844

申请日：1991-06-18

Applicant: Larry D. Flesner ,  Stephen A. Miller ,  Wadad B. Dubbelday

Inventor： Larry D. Flesner ,  Stephen A. Miller ,  Wadad B. Dubbelday

IPC: H01J43/30 ,  H01L27/144

CPC classification number: H01J43/30 ,  H01L27/1446

Abstract: An optically powered photomultiplier tube is provided, comprising a vacuum chamber having a window for incident optical radiation which is to be detected; a photocathode to receive the optical radiation; an electron multiplier system within the chamber to amplify the electron current from the photocathode; an anode to receive the amplified electron current; a high voltage photocell array positioned within the chamber for generating high voltage electrical power that is provided to the electron multiplier system; a system for delivering optical power to the photocell array; a first electrical contact penetrating the container in a vacuum tight manner and operably coupled to the anode; and a second electrical contact penetrating the container in a vacuum tight manner and operably coupled to the photocell array.

Abstract translation: 提供光学光电倍增管，其包括具有待检测的入射光辐射窗口的真空室; 用于接收光辐射的光电阴极; 室内的电子倍增器系统，用于放大来自光电阴极的电子电流; 接收放大电子电流的阳极; 位于腔室内的高电压光电池阵列，用于产生提供给电子倍增器系统的高压电力; 用于向光电池阵列传送光功率的系统; 以真空密封方式穿透容器并且可操作地耦合到阳极的第一电接触; 以及以真空密封方式穿透容器并可操作地耦合到光电晶体阵列的第二电接触。

公开(公告)号：US4929831A

公开(公告)日：1990-05-29

申请号：US282717

申请日：1988-12-08

Applicant: Larry D. Flesner ,  Welsey L. Eisenman ,  James D. Merriam ,  Richard L. Bates ,  Rolf N. Dahle ,  Douglas C. Arrington

Inventor： Larry D. Flesner ,  Welsey L. Eisenman ,  James D. Merriam ,  Richard L. Bates ,  Rolf N. Dahle ,  Douglas C. Arrington

IPC: G01R31/265 ,  H01J37/20 ,  H01J37/26

CPC classification number: H01J37/268 ,  G01R31/2653 ,  H01J37/20

Abstract: An apparatus for testing infrared detectors in response to a selectively controlled electron beam within a cryogenically shielded environment includes a cryostat having an aperture which is positioned adjacent to a scanning electron microscope. An electron beam emitted from the microscope propagates through the aperture to illuminate an infrared detector mounted within the cryostat so that the detector can be tested in an environment substantially free of spurious infrared radiation.

Abstract translation: 用于在低温保护环境中响应于选择性控制的电子束来测试红外检测器的装置包括具有邻近扫描电子显微镜定位的孔的低温恒温器。 从显微镜发射的电子束通过孔传播，以照射安装在低温恒温器内的红外检测器，使得检测器可以在基本上没有假红外辐射的环境中进行测试。

公开(公告)号：US4912330A

公开(公告)日：1990-03-27

申请号：US295084

申请日：1988-12-27

Applicant: Larry D. Flesner

Inventor： Larry D. Flesner

IPC: G01R31/265

CPC classification number: G01R31/2653

Abstract: An apparatus for testing infrared detector response to ionizing radiation within an infrared shielded environment includes a cryostat having an aperture which is positioned adjacent to a scanning electron microscope (SEM). The SEM generates an electron beam which propagates through the aperture and is absorbed by a foil positioned adjacent the detector. The interaction of the electron beam with the foil produces X-rays which irradiate the detector. Instruments electrically coupled to the detector record and display the detector response.

Abstract translation: 用于测试红外检测器对红外屏蔽环境内的电离辐射的响应的装置包括具有邻近扫描电子显微镜（SEM）定位的孔的低温恒温器。 SEM产生电子束，该电子束通过孔传播并被位于检测器附近的箔吸收。 电子束与箔的相互作用产生照射检测器的X射线。 电耦合到检测器的仪器记录并显示检测器响应。

公开(公告)号：US4902967A

公开(公告)日：1990-02-20

申请号：US353722

申请日：1989-05-18

Applicant: Larry D. Flesner

Inventor： Larry D. Flesner

IPC: G01Q30/02 ,  G01Q30/04 ,  G01R31/305

CPC classification number: G01R31/305

Abstract: A process and apparatus are disclosed for remotely determining electrical properties of a semiconductor. A surface of the semiconductor is simultaneously irradiated with an electron beam to generate secondary electrons from the irradiated surface and with a modulated light beam. Secondary electrons emitted by the semiconductor are filtered by an electron energy analyzer. An electron detector receives the filtered electrons and provides an output corresponding to electrical properties of the irradiated area. The output is provided to a computer which calculates the difference in output between periods when the semiconductor is being illuminated with the light beam and when it is not so illuminated. The time dependence of the output may also be measured.

Abstract translation: 公开了用于远程确定半导体的电特性的方法和装置。 同时用电子束照射半导体的表面，从照射的表面和调制的光束产生二次电子。 由半导体发射的二次电子被电子能量分析仪滤波。 电子检测器接收经滤波的电子并提供对应于照射区域的电性能的输出。 输出被提供给计算机，该计算机计算当半导体被光束照射时和在不被照亮时的周期之间的输出差异。 也可以测量输出的时间依赖性。