公开(公告)号：US20060065629A1

公开(公告)日：2006-03-30

申请号：US10954086

申请日：2004-09-30

申请人： Lee Chen ,  Hitomitsu Kambara ,  Caiz Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

发明人： Lee Chen ,  Hitomitsu Kambara ,  Caiz Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/302

CPC分类号： H01J37/32706 ,  H01J37/32211 ,  H01J37/3244 ,  H01L21/31116

摘要： A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.

摘要翻译： 处理衬底的方法包括将衬底设置在具有被配置为限定等离子体空间的第一室部分的处理室中，以及构造成限定处理空间的第二室部分，将第一气体引入等离子体空间并引入第二气体 到过程空间。 在等离子体空间中，使用与上室部分相连的等离子体源，在等离子体空间中形成等离子体，通过提供位于第一室部分和第二部分之间的格栅，在处理空间中形成用于处理基板的工艺化学品 室部分，使得等离子体可以从等离子体空间扩散到处理空间。

公开(公告)号：US07268084B2

公开(公告)日：2007-09-11

申请号：US10954086

申请日：2004-09-30

申请人： Lee Chen ,  Hitomitsu Kambara ,  Caiz Hong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

发明人： Lee Chen ,  Hitomitsu Kambara ,  Caiz Hong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC分类号： H01L21/302

CPC分类号： H01J37/32706 ,  H01J37/32211 ,  H01J37/3244 ,  H01L21/31116

摘要： A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.

摘要翻译： 处理衬底的方法包括将衬底设置在具有被配置为限定等离子体空间的第一室部分的处理室中，以及构造成限定处理空间的第二室部分，将第一气体引入等离子体空间并引入第二气体 到过程空间。 在等离子体空间中，使用与上室部分相连的等离子体源，在等离子体空间中形成等离子体，通过提供位于第一室部分和第二部分之间的格栅，在处理空间中形成用于处理基板的工艺化学品 室部分，使得等离子体可以从等离子体空间扩散到处理空间。

公开(公告)号：US20060065367A1

公开(公告)日：2006-03-30

申请号：US10953801

申请日：2004-09-30

申请人： Lee Chen ,  Hiromitsu Kambara ,  Caiz Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

发明人： Lee Chen ,  Hiromitsu Kambara ,  Caiz Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC分类号： H01L21/306

CPC分类号： H01J37/32211 ,  H01J37/32082 ,  H01J37/32192

摘要： A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.

摘要翻译： 用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理 底物。 衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体 等离子体空间 栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。

公开(公告)号：US07396431B2

公开(公告)日：2008-07-08

申请号：US10953801

申请日：2004-09-30

申请人： Lee Chen ,  Hiromitsu Kambara ,  Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

发明人： Lee Chen ,  Hiromitsu Kambara ,  Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32211 ,  H01J37/32082 ,  H01J37/32192

摘要： A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.

摘要翻译： 用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理 底物。 衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体 等离子体空间 栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。

公开(公告)号：US20100032094A1

公开(公告)日：2010-02-11

申请号：US12441429

申请日：2008-08-20

申请人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： H01L21/306 ,  C23C16/54

CPC分类号： H01L21/461 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46 ,  Y10T428/24273

摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.

摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶棚板允许从天花板板设置的平面天线构件的槽口发射的微波通过顶板进入处理室，并且包括在天花板的表面上以放射状图案设置的多个突起部分， 表面朝向处理室的内部。

公开(公告)号：US08343308B2

公开(公告)日：2013-01-01

申请号：US12441429

申请日：2008-08-20

申请人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Tetsuya Nishizuka ,  Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/461 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3222 ,  H05H1/46 ,  Y10T428/24273

摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural concave portions provided along a circle on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.

摘要翻译： 公开了一种设置在可以被抽真空的处理室的顶部的顶板。 顶板允许从天花板板一侧设置的平面天线构件的槽口发出的微波通过顶板进入处理室，并且包括沿着顶板的表面沿着圆形设置的多个凹部， 面向处理室的内部。

公开(公告)号：US20120064726A1

公开(公告)日：2012-03-15

申请号：US13232160

申请日：2011-09-14

申请人： Toshihisa Nozawa ,  Masaru Sasaki ,  Jun Hashimoto ,  Shota Yoshimura ,  Toshihisa Ozu ,  Tetsuya Nishizuka

发明人： Toshihisa Nozawa ,  Masaru Sasaki ,  Jun Hashimoto ,  Shota Yoshimura ,  Toshihisa Ozu ,  Tetsuya Nishizuka

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01J37/32192 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/76224 ,  H01L21/76897 ,  H01L29/6653 ,  H01L29/6656

摘要： There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

摘要翻译： 提供了一种用于以期望的形状进行蚀刻的等离子体蚀刻装置。 等离子体蚀刻装置包括用于对目标基板W进行等离子体处理的处理室12; 用于将等离子体处理气体供给到处理室12中的气体供给单元13; 位于处理室12内并被配置为在其上支撑目标基板的支撑台; 用于产生用于等离子体激发的微波的微波发生器15; 等离子体产生单元，用于通过使用产生的微波在处理室12内产生等离子体; 用于控制处理室12内的压力的压力控制单元; 用于向支撑台14提供AC偏压电力的偏置电源单元; 以及控制单元，用于通过交替地重复AC偏置功率的供应和停止来控制AC偏置功率。

公开(公告)号：US08969210B2

公开(公告)日：2015-03-03

申请号：US13232160

申请日：2011-09-14

申请人： Toshihisa Nozawa ,  Masaru Sasaki ,  Jun Hashimoto ,  Shota Yoshimura ,  Toshihisa Ozu ,  Tetsuya Nishizuka

发明人： Toshihisa Nozawa ,  Masaru Sasaki ,  Jun Hashimoto ,  Shota Yoshimura ,  Toshihisa Ozu ,  Tetsuya Nishizuka

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/762 ,  H01L21/768 ,  H01L29/66

CPC分类号： H01L21/3065 ,  H01J37/32192 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/76224 ,  H01L21/76897 ,  H01L29/6653 ,  H01L29/6656

摘要： There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

摘要翻译： 提供了一种用于以期望的形状进行蚀刻的等离子体蚀刻装置。 等离子体蚀刻装置包括用于对目标基板W进行等离子体处理的处理室12; 用于将等离子体处理气体供给到处理室12中的气体供给单元13; 位于处理室12内并被配置为在其上支撑目标基板的支撑台; 用于产生用于等离子体激发的微波的微波发生器15; 等离子体产生单元，用于通过使用产生的微波在处理室12内产生等离子体; 用于控制处理室12内的压力的压力控制单元; 用于向支撑台14提供AC偏压电力的偏置电源单元; 以及控制单元，用于通过交替地重复AC偏置功率的供应和停止来控制AC偏置功率。

公开(公告)号：US20100279512A1

公开(公告)日：2010-11-04

申请号：US12743047

申请日：2008-10-30

申请人： Hirokazu Udea ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Takaaki Matsuoka

发明人： Hirokazu Udea ,  Tetsuya Nishizuka ,  Toshihisa Nozawa ,  Takaaki Matsuoka

IPC分类号： H01L21/465 ,  H01L21/46

CPC分类号： C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32954 ,  H05H1/46

摘要： A plasma processing apparatus includes an antenna unit for generating plasma by using microwaves as a plasma source in such a way that a first region having a relatively high electron temperature of plasma, and a second region having a lower electron temperature of plasma than the first region are formed in a chamber, a first arranging means for arranging a semiconductor substrate W in the first region, a second arranging means for arranging the semiconductor substrate in the second region, and a plasma generation stopping means for stopping the generation of plasma of a plasma generating means, while the semiconductor substrate is arranged in the second region.

摘要翻译： 等离子体处理装置包括：天线单元，用于通过使用微波作为等离子体源来产生等离子体，使得等离子体的电子温度相对较高的第一区域和具有比第一区域更低的等离子体电子温度的第二区域 形成在腔室中，第一布置装置，用于在第一区域中布置半导体衬底W;第二布置装置，用于将半导体衬底布置在第二区域;以及等离子体产生停止装置，用于停止产生等离子体的等离子体 同时半导体衬底被布置在第二区域中。

公开(公告)号：US08480848B2

公开(公告)日：2013-07-09

申请号：US12095262

申请日：2006-11-15

申请人： Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Tetsuya Nishizuka ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3244

摘要： The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.

摘要翻译： 等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其特征在于，包括：顶棚部分打开并且其内部可被抽真空的处理室; 由介电材料制成并且气密地安装到顶部的开口的顶板; 平面天线构件，其安装在所述顶板的顶面上，用于将微波导入所述处理室; 以及具有连接到平面天线构件的中心导体用于供给微波的同轴波导，其中形成气体通道以穿过中心导体，平面天线构件和顶板，并且电场衰减 用于衰减顶板的中心部分的电场强度的凹部安装在顶板的中心区域的顶表面上。